silvaco离子注入氮

在silvaco仿真代码中，目前并未提到离子注入氮的步骤。然而，根据引用中的描述，可以使用氮气进行退火。退火过程中，可能会改变硅片的内部掺杂浓度和衬底处的掺杂浓度。退火后，可以通过刻蚀掉一些氧化层并生长电极来进一步处理器件。请注意，在刻蚀任意形状时，需要按照顺时针或逆时针的顺序进行点的刻蚀。<span class="em">1</span><span class="em">2</span><span class="em">3</span>
#### 引用[.reference_title]
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