nand flash re-read vs read retry
时间: 2023-10-27 22:05:12 浏览: 47
NAND flash memory is widely used in electronic devices such as smartphones, tablets, and solid-state drives (SSDs). During the reading process, errors can occur due to various factors such as noise and interference. To improve the reliability of data reading, NAND flash memory controllers implement two techniques: re-read and read retry.
Re-read is a technique where the memory controller reads the same data multiple times and compares the results to detect errors. If the results are inconsistent, the controller will perform another read operation until it gets a consistent result. Re-read is a simple and effective technique to detect and correct errors.
Read retry is a more advanced technique that involves adjusting the read parameters of the memory controller based on the characteristics of the NAND flash memory. Read parameters such as read voltage and read latency can be adjusted to improve the reliability of data reading. Read retry requires more complex algorithms and can improve the performance of the NAND flash memory in high-noise environments.
In summary, re-read and read retry are two techniques used by NAND flash memory controllers to improve the reliability of data reading. Re-read is a simple and effective technique that reads the same data multiple times and compares the results to detect errors. Read retry is a more advanced technique that adjusts the read parameters of the memory controller based on the characteristics of the NAND flash memory to improve the reliability of data reading.