全无机高效彩色量子点发光二极管的突破

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"高效率全无机全色彩量子点发光二极管" 这篇研究论文主要探讨了高效率全无机全色彩量子点发光二极管（Quantum Dot Light-Emitting Diodes, QLEDs）的设计、制备及其性能。量子点（Quantum Dots, QDs）因其独特的光谱特性，近年来在显示技术和照明领域受到了广泛的关注。它们具有窄发射带宽、可调谐的光谱以及优异的色纯度，这使得QLEDs在全彩显示应用中展现出巨大的潜力。文章可能详细介绍了以下知识点： 1. **量子点材料**：全无机量子点通常由II-VI族或III-V族半导体材料组成，如CdSe、CdTe、InP等。这些材料的稳定性更高，且在高温和潮湿环境下表现出更好的耐受性。 2. **器件结构**：QLEDs的结构通常包括阳极、量子点层、电子注入层、电子传输层、空穴传输层和阴极。研究可能详细阐述了各层材料的选择和优化，以及如何通过调整各层厚度和组成来提高器件的效率和稳定性。 3. **电致发光机制**：在电场作用下，电子和空穴在量子点层内复合，释放能量以光子的形式发射出来，形成电致发光。理解这一过程对于优化QLEDs的效率至关重要。 4. **颜色调控**：通过调整量子点的大小和形状，可以精确控制其发射光的颜色，从而实现全彩色显示。论文可能会介绍如何通过化学合成方法实现这一目标。 5. **器件效率提升策略**：可能包括优化载流子注入、提高量子点的辐射复合率、降低非辐射损耗、以及改善界面性质以减少能量损失。 6. **稳定性研究**：由于QLEDs的实际应用需要长期稳定的工作性能，研究可能涉及器件的老化测试和稳定性分析，以及提出改善稳定性的方案。 7. **实验与表征**：论文会详细描述实验方法，包括器件的制备工艺和性能测试，如电流密度-电压-亮度（J-V-L）特性曲线、色坐标测量等。 8. **理论分析**：基于量子点的能级结构和器件物理模型，可能进行了理论计算和模拟，以解析实验结果并预测性能改进的可能性。这篇论文深入研究了全无机全色彩量子点发光二极管的高性能实现，为量子点显示技术的进步提供了新的见解和解决方案。

Contents lists available at ScienceDirect

Nano Energy

journal homepage: www.elsevier.com/locate/nanoen

Communication

High-eﬃciency all-inorganic full-colour quantum dot light-emitting diodes

Xuyong Yang

⁎

, Zi-Hui Zhang

, Tao Ding

, Ning Wang

, Guo Chen

, Cuong Dang

Hilmi Volkan Demir

, Xiao Wei Sun

⁎

Key Laboratory of Advanced Display and System Applications of Education of Ministry, Shanghai University, 149 Yanchang Road, Shanghai 200072, PR China

Institute of Micro-Nano Photoelectron and Electromagnetic Technology Innovation, School of Electronics and Information Engineering, Hebei University of Technology,

5340 Xiping Road, Beichen District, Tianjin 300401, PR China

Luminous! Center of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, School of Physical and Mathematical Sciences,

Nanyang Technological University, Nanyang Avenue, Singapore 639798, Singapore

Department of Electrical and Electronic Engineering, Southern University of Science and Technology, 1088 Xue-Yuan Road, Shenzhen, Guangdong 518055, PR China

ARTICLE INFO

Keywords:

Electroluminescent devices

Quantum dots

Electroluminescence

Light-emitting diodes

Inorganic nanodevices

ABSTRACT

All-inorganic quantum dot light-emitting diodes (QLEDs) with excellent device stability have attracted sig-

niﬁcant attention for solid state lighting and ﬂat panel display applications. However, the performance for the

present all-inorganic QLEDs is far inferior to that of the well-developed QLEDs with organic charge transport

layers. Our all-inorganic full-colour QLEDs show the maximum brightness and eﬃciency values of 21,600 cd/m

and 6.52%, respectively, which are record-breaking among the existing all-inorganic QLEDs. The outstanding

performance is achieved by an eﬃcient design of device architecture with solution-processed charge transport

layers (CTLs). Meanwhile, the ultrathin double-sided insulating layers are inserted between the quantum dot

emissive layer and their adjacent oxide electron transport layers to better balance charge injection in the device

and reduce the quenching eﬀects for inorganic CTLs on QD emission. This study is the ﬁrst account for high-

performance, all-inorganic QLEDs insightfully oﬀering detailed investigations into the performance promotion

for inorganic electroluminescent devices.

1. Introduction

Colloidal quantum dot (QD)-based light-emitting diodes (QLEDs)

with advantages in narrow emission linewidth, tunable emission wa-

velength and cost-eﬀectiveness are reaching organic LEDs’ performance

and emerging as a candidate for single material capable of full-colour

light sources [1–8]. Currently, the most developed QLEDs employ or-

ganic semiconductors as the charge transport layers (CTLs). However,

these organic layers are less stable compared with inorganic materials,

especially under high current densities [9–11]. The stability of the

present QLEDs has become a big concern for their practical applications

in lighting and displays [12,13]. Despite their excellent device stability,

the performance of inorganic QLEDs has been signiﬁcantly lower than

that of QLEDs with organic CTLs. The relatively poor device perfor-

mance is mainly caused by the imbalanced carrier injection resulting

from a large energy barrier between the metal-oxide CTL and the QDs

as well as the strong quenching eﬀect of the surrounding conductive

metal oxide on the QD emission (charging QDs) [14–18].

To achieve high-performance all-inorganic QLEDs, it is therefore ne-

cessary to optimize the charge balance in devices and minimize the

negative inﬂuenceofinorganicCTLsonQDs.Thechoiceofcharge

transport materials for inorganic QLEDs is relatively limited compared to

the well-developed organic molecules with excellent charge transport

properties. Due to the better compatibility with QD deposition, solution-

processed metal-oxide thin ﬁlms with controllable morphologies and in-

terface structures at the nanometer scale have been widely used as CTLs

forQLEDs,whicharemoreeﬃcient than their bulk counterparts [19–24].

Till date, the reported highest eﬃciency values for all the red, green and

blue (RGB) emitting QLEDs are based on the use of solution-processed ZnO

nanoparticles (NPs) as the electron transport layer (ETL) [1,2,25].Re-

cently, the incorporation of an organic insulating thin layer between QDs

and inorganic ZnO ETL has shown to improve the charge balance in QD

layer, and by avoiding QD charging (ref. [1]), this design holds great

promise for preserving excellent emissive properties of the QDs. This

suggests the great potential that solution-processed multilayer structures

with properly modulating charge injection could be used to improve the

performance of all-inorganic QLEDs.

Here, we demonstrate high-performance all-inorganic QLEDs

through an eﬃcient device structure design where the solution-pro-

cessed metal oxides served as charge transport layers. By inserting

https://doi.org/10.1016/j.nanoen.2018.02.002

Received 3 January 2018; Received in revised form 1 February 2018; Accepted 1 February 2018

⁎

Corresponding authors.

E-mail addresses: yangxy@shu.edu.cn (X. Yang), sunxw@sustc.edu.cn (X.W. Sun).

Nano Energy 46 (2018) 229–233

Available online 03 February 2018

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