美光汽车级LPDDR4/4X SDRAM MT53E系列特性与低功耗优势

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美光汽车级低功耗双倍数据速率（LPDDR4/LPDDR4X）SDRAM系列，如MT53E1G16D1、MT53E1G32D2和MT53E2G32D4，专为汽车行业设计，提供了高性能和低功耗解决方案。这些内存模块具有以下关键特性： 1. **电压兼容性**： - LPDDR4X支持超低电压核心供电，VDD1工作范围为1.70-1.95V，标准电压为1.80V，而LPDDR4模式下的VDDQ电压则可在1.06-1.17V范围内，标准为1.10V。对于低电压操作，VDDQ可降低至0.57-0.65V，标准为0.60V。 2. **频率范围**： - 该产品提供从2133MHz到10MHz的频率范围，对应的数据速率可达4266-20Mb/s，满足不同应用场景的需求。 3. **架构设计**： - 采用16预取线程的DDR架构，增强了数据处理能力。 - 每个通道有8个内部银行，支持并行操作，提高效率。 4. **命令和地址传输**： - 单一数据速率CMD/ADR（命令/地址）入口，简化了控制流程。 - 每个数据位宽提供双向或差分数据使能信号，确保高速传输。 5. **可编程时序参数**： - 可编程的读写延迟（RL/WL），以及突发长度（BL）设置，灵活性高，支持定制化性能。 6. **刷新机制**： - 针对并发银行操作优化的定向银行刷新，便于命令调度。 - 内置芯片温度传感器，用于自动调整自刷新率，确保系统稳定性。 7. **电源管理**： - 包含部分数组自刷新（PASR）功能，降低能耗，延长电池寿命。 8. **输出驱动选择**： - 提供可选的输出驱动能力，适应不同系统接口要求。美光的MT53E1G16D1、MT53E1G32D2和MT53E2G32D4是针对汽车电子应用的高性能LPDDR4/LPDDR4X SDRAM，集成了低功耗特性与高效数据处理能力，适用于对能源效率和可靠性有严格要求的汽车信息系统。通过灵活的时序配置和电源管理选项，这些内存能够满足各种复杂的汽车电子设备的需求。

Table 207: MR0 Device Feature 0 (MA[5:0] = 00h) ........................................................................................... 277

Table 208: MR0 Op-Code Bit Definitions ....................................................................................................... 277

Table 209: MR3 I/O Configuration 1 (MA[5:0] = 03h) ...................................................................................... 278

Table 210: MR3 Op-Code Bit Definitions ....................................................................................................... 279

Table 211: MR12 Register Information (MA[5:0] = 0Ch) .................................................................................. 280

Table 212: MR12 Op-Code Bit Definitions ...................................................................................................... 280

Table 213: Mode Register 14 (MA[5:0] = 0Eh) ................................................................................................. 280

Table 214: MR14 Op-Code Bit Definition ....................................................................................................... 281

Table 215: V

REF

Setting for Range[0] and Range[1] .......................................................................................... 282

Table 216: MR22 Register Information (MA[5:0] = 16h) ................................................................................... 283

Table 217: MR22 Register Information ........................................................................................................... 283

Table 218: Reference Voltage for

LZ(DQS),

HZ(DQS) Timing Measurements .................................................. 286

Table 219: Reference Voltage for

LZ(DQ),

HZ(DQ) Timing Measurements ..................................................... 288

Table 220: Internal V

REF(CA)

Specifications ..................................................................................................... 289

Table 221: Internal V

REF(DQ)

Specifications .................................................................................................... 290

Table 222: Pull-Down Driver Characteristics – ZQ Calibration ........................................................................ 292

Table 223: Pull-Up Characteristics – ZQ Calibration ....................................................................................... 292

Table 224: Terminated Valid Calibration Points .............................................................................................. 292

Table 225: Command Bus ODT State ............................................................................................................. 293

Table 226: ODT DC Electrical Characteristics for Command/Address Bus – up to 3200 Mb/s ........................... 294

Table 227: ODT DC Electrical Characteristics for Command/Address Bus – Beyond 3200 Mb/s ....................... 295

Table 228: ODT DC Electrical Characteristics for DQ Bus– up to 3200 Mb/s .................................................... 296

Table 229: ODT DC Electrical Characteristics for DQ Bus – Beyond 3200 Mb/s ................................................ 297

Table 230: Output Driver and Termination Register Sensitivity Definition ....................................................... 298

Table 231: Output Driver and Termination Register Temperature and Voltage Sensitivity ................................. 298

Table 232: Recommended DC Operating Conditions ..................................................................................... 299

Table 233: Single-Ended Output Slew Rate .................................................................................................... 299

Table 234: Differential Output Slew Rate ....................................................................................................... 300

Micron Confidential and Proprietary

200b: x16/x32 Automotive LPDDR4/LPDDR4X SDRAM

Features

CCM005-554574167-10729

200b_z32m_sdp_ddp_qdp_auto_lpddr4_lpddr4x.pdf – Rev. F 12/2020 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

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including without limitation specifications and product descriptions. This document supersedes and replaces all

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General Description

The 16Gb low-power DDR4 SDRAM (LPDDR4) or low V

DDQ

(LPDDR4X) is a high-speed,

CMOS dynamic random-access memory device. This 8-bank device is internally config-

ured with ×16 I/O.

Micron Confidential and Proprietary

200b: x16/x32 Automotive LPDDR4/LPDDR4X SDRAM

Important Notes and Warnings

CCM005-554574167-10729

200b_z32m_sdp_ddp_qdp_auto_lpddr4_lpddr4x.pdf – Rev. F 12/2020 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

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