同轴硅-绝缘体-硅通孔TSV的电学特性探究

38 浏览量更新于2024-08-26 收藏 1.8MB PDF 举报

"同轴硅-绝缘体-硅直通硅通Kong的电学特性：理论分析和实验" 这篇研究论文深入探讨了同轴硅-绝缘体-硅(硅谷)直通硅通孔（TSV）的电学特性，这是一种在3D/2.5D异质集成系统中实现阻抗匹配、降低传输损耗和抑制干扰或噪声耦合的有效解决方案。作者包括Zhiming Chen, Miao Xiong, Bohao Li, An’an Li, Yangyang Yan 和 Yingtao Ding。同轴TSV的设计基于重掺杂硅-绝缘体-硅(SIS)结构，这种结构对制造工艺友好，同时能够优化电气性能。论文通过理论分析、数值模拟以及实验测量来研究其电学特性。首先，他们利用电磁理论和半导体物理导出了分布电阻-电感-电容-导纳(RLCG)参数，这些参数对于理解TSV的信号传播和能量损失至关重要。在实验部分，研究人员采用了片上测量技术，并利用去嵌入技术获得了所制备器件的宽频S参数。这些测量结果与三维全波仿真结果进行了对比，以验证理论模型的准确性和实际性能。这一步骤对于评估TSV的实际工作表现和验证设计概念至关重要。此外，通过理论分析和实验数据的结合，论文可能还探讨了同轴TSV在不同频率下的传输特性、噪声性能以及在不同工作条件下的稳定性。这有助于优化3D集成电路设计，提升系统整体性能，并为未来高性能计算和通信应用提供关键的组件。这篇论文为理解和优化同轴TSV在高密度集成电子系统中的应用提供了重要的理论依据和实证数据，对于推动半导体工业的发展具有深远的影响。通过深入研究，研究人员不仅揭示了同轴TSV的电学特性，还为提高3D集成系统的互连性能开辟了新的路径。

4880 IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 63, NO. 12, DECEMBER 2016

Electrical Characterization of Coaxial

Silicon–Insulator–Silicon Through-Silicon Vias:

Theoretical Analysis and Experiments

Zhiming Chen, Miao Xiong, Bohao Li, An’an Li, Yangyang Yan, and Yingtao Ding

Abstract—Coaxial through-silicon via (TSV) provides an

effective solution to achieve impedance matching, reduce trans-

mission loss, and suppress interference or noise coupling in

3-D/2.5-D heterointegrated systems. This paper presents a

fabrication friendly coaxial TSV conﬁguration based on heav-

ily doped silicon–insulator–silicon (SIS) structure, whose elec-

trical characteristics are studied through deriving analytical

solution, performing numerical simulation, and conducting exper-

imental measurement. The distributed resistance–inductance–

capacitance–conductance (RLCG) parameters are calculated

from electromagnetic theory and semiconductor physics. Wide-

band S-parameters of the fabricated devices are obtained using

on-wafer measurement with deembedding technique, and then

compared against 3-D full-wave simulations and analytical solu-

tions, exhibiting good agreement up to 50 GHz. Results show that

the proposed coaxial SIS TSV offers ﬂexible impedance control,

good matching, and low insertion loss, and supports 30-Gbps

data transmission with the simpler structure as well as the lower

fabrication cost compared with various coaxial TSV structures

reported to date.

Index Terms—Coaxial through-silicon via (TSV), eye dia-

gram, resistance–inductance–capacitance–conductance (RLCG)

model, silicon–insulator–silicon (SIS), 3-D ICs, wideband

S-parameters.

I. INTRODUCTION

3-D integration technology has attracted much atten-

tion both from the academics and industries for it can

not only provide an alternative solution to further increase

the packaging density of future electronic devices but also

facilitate heterogeneous integration of multifunctional sys-

tems [1]–[4]. As the key of 3-D integration, through-silicon

vias (TSVs) have also been studied aggressively, including

their manufacturing [5]–[7], modeling [8], [9], and electrical

characterization [10].

However, conventional TSVs are susceptible to coupling

noise and crosstalk, moreover, the lossy silicon substrate

(∼10  · cm) between the signal and ground TSVs as well

as the impedance mismatch results in signiﬁcant loss and

Manuscript received August 23, 2016; revised October 3, 2016;

accepted October 11, 2016. Date of publication October 27, 2016; date

of current version November 22, 2016. This work was supported in

part by the National Natural Science Foundation of China under Grant

61301006 and Grant 61574016 and in part by 111 Project of China under

Grant B14010. The review of this paper was arranged by Editor M. S. Bakir.

(Corresponding author: Yingtao Ding)

The authors are with the Beijing Institute of Technology, Beijing 100081,

China (e-mail: czm@bit.edu.cn; ytd@bit.edu.cn).

Color versions of one or more of the ﬁgures in this paper are available

online at http://ieeexplore.ieee.org.

Digital Object Identiﬁer 10.1109/TED.2016.2618383

Fig. 1. Cross-sectional views of three coaxial TSV conﬁgurations using

Cu as the inner and outer conductors. (a) SiO

dielectric. (b) SiO

/Si mixed

dielectric. (c) Polymer dielectric.

poor signal integrity, especially at high frequencies [11], [12].

In order to overcome these drawbacks, coaxial TSVs with self-

shielding property have been proposed in [13]–[16], which

provide high immunity to noise and interference, avoid signal

reﬂection due to impedance mismatch, and reduce insertion

loss in radio frequency and millimeter-wave (MMW) signal

transmission or high-speed data communication.

Fig. 1 shows three main coaxial TSV conﬁgurations, which

all employ Cu as the conductive material but use different

kinds of dielectrics. Fig. 1(a) shows coaxial TSVs utilizing

SiO

as liner material [17], [18]. Since the SiO

liner thickness

is usually several hundred nanometers limited by chemical

vapor deposition, the achievable radius ratio n (outer shell

to inner conductor) is very close to unity, which leads to

small characteristic impedance and poor impedance matching.

The coaxial TSV conﬁguration shown in Fig. 1(b) employs a

mixed SiO

/Si liner between the inner and outer conductors,

which helps to increase the ratio n for better impedance

matching [19]–[21], however, the transmission loss perfor-

mance of this kind of coaxial TSV is compromised due to

the insertion of a lossy silicon layer. In order to achieve low

transmission loss and well-controlled characteristic impedance

simultaneously, the structure using polymer liner is proposed

and successfully fabricated [12], [13], as shown in Fig. 1(c).

However, their overall TSV dimensions are on the order of

hundred micrometers, which are not suitable for high-density

3-D integration. Besides, since the previous works on coaxial

TSVs all utilize metal (e.g., copper) as the conductive material,

they involve a series of complicated fabrication processes to

form inner and outer conductors and dielectric layers.

In this paper, a coaxial TSV based on heavily doped silicon–

insulator–silicon (SIS) structure is proposed, fabricated, and

characterized, which employs the ultralow-resistivity sili-

con (ULRS) as the material for inner and outer conductors

See http://www.ieee.org/publications_standards/publications/rights/index.html for more information.

下载后可阅读完整内容，剩余7页未读，立即下载

weixin_38537315

粉丝: 6
资源: 876

同轴硅-绝缘体-硅通孔TSV的电学特性探究

Cu-CNT异质同轴硅通孔的电学特性优化与设计指导

3-D集成：同轴硅通孔的宽带阻抗分析

等离子同轴波导传输特性分析

Cu-CNT异质同轴硅通Kong的电学建模和分析

同轴环形硅通Kong的宽带电磁建模

3-D集成中同轴硅通Kong的宽带阻抗模型

同轴-矩形波导转换器仿真实验报告

计算机网络实验----课程实验报告-实验一--VLAN划分实验.doc

半导体激光器同轴封装的高频影响:分析与实验

同轴旋翼直升机性能：同轴旋翼直升机性能分析-matlab开发

最新资源