A new IGBT control and drive circuit for high-power full-bridge
inverter for electrostatic precipitators
J.D. Zhu
a
,
b
, Jiaqian Liang
a
,Y.Lu
a
, C.H. Zhang
a
,
*
a
Dept. of Electrical Engineering, Harbin Institute of Technology, 92 Xidazhi Street, Harbin 150001, China
b
State Grid Electric Power Research Institute, Nanjing 2100 03, China
article info
Article history:
Received 1 September 2012
Received in revised form
21 November 2012
Accepted 21 November 2012
Available online xxx
Keywords:
IGBT
Phase shift control
Switching characteristic
abstract
In this paper, aiming at the characteristics of high-power full-bridge inverter, a new IGBT control and
drive circuit is designed, in which UCC3895, a phase shift and dead-time control chip, MC33152, a high-
speed dual-phase driver, and PT6 isolation transformers consist the core part. The circuit can regulate its
frequency, phase angle and dead-time, while possessing following features: short turn-on/off time, low-
voltage peak, simplified circuit structure, high reliability and universality, etc. Now, it has been
successfully applied on the power supply for 72 kV/1 A high-frequency high-voltage electrostatic
precipitator.
Ó 2012 Elsevier B.V. Al l rights reserved.
1. Introduction
High-power full-bridge inverter [1,2] has been widely imple-
mented in industry field, for example, laser power, high-frequency
high-voltage switching power supply for electrostatic precipitation,
and energy storage, etc. In recent years, with improving property
and reducing price of power device, there comes the possibility of
large-scale production and application of high-power inverter. As
a prominent representative of power device, IGBT has been rapidly
developed and widely applied in these years [3].
IGBT, a combination of MOSFET and bipolar transistor, is also
a combination of the respective advantages of both constituents.
IGBT has multiple advantages, involving high input-impedance,
high-speed, distinctive thermal stability and simple drive circuit
[4]. Besides, there are other advantages such as low on-state
voltage, high voltage and current endurance [5,6]. Therefore, IGBT
has been implemented more broadly in modern power electronic
technique. The implementation of qualified drive circuit leads to
following benefits: ideal switching states, shortened switching
time and less switching losses. In addition, it is also significantly
beneficial to operating efficiency, reliability, and security of device
[7]. However, as a part of switching power supply, IGBT has to work
under high voltage and current. Accordingly, how to enable high
efficiency and reliability of IGBT has become a critical and also
challenging point.
2. Typical full-bridge inverter circuit
Fig. 1 shows a typical full-bridge circuit.
This circuit is consisted of four parts: powerefrequency rectifier,
high-frequency inverter, high-frequency high-voltage transformer
and high-frequency high-voltage silicon rectifier stack. The energy
of gate is infused into a full-bridge silicon rectifier stack, in the form
of 3-phase powerefrequency AC. After rectifying and filtering the
3-phase voltage, we can get 510 V DC, which is sequentially pro-
cessed by IGBT high-frequency inverter to get high-frequency AC.
Afterwards, high-frequency high-voltage transformer is applied to
enhance the voltage, while silicon rectifier stack is used to attain
high voltage DC in the end.
3. Control and drive circuit
3.1. Circuit schematic
The schematic is consisted of 2 parts: control (Fig. 2) and drive
circuit (Fig. 3).
3.2. Operating principle
This circuit is employed to generate 4 driving signals for the full-
bridge inverter circuit. Drive 1 and Drive 2 work respectively to
*
Corresponding author.
E-mail address: zch852@gmail.com (C.H. Zhang).
Contents lists available at SciVerse ScienceDirect
Journal of Electrostatics
journal homepage: www.elsevier.com/locate/elstat
0304-3886/$ e see front matter Ó 2012 Elsevier B.V. All rights reserved.
http://dx.doi.org/10.1016/j.elstat.2012.11.025
Journal of Electrostatics xxx (2012) 1e5
Please cite this article in press as: J.D. Zhu, et al., A new IGBT control and drive circuit for high-power full-bridge inverter for electrostatic
precipitators, Journal of Electrostatics (2012), http://dx.doi.org/10.1016/j.elstat.2012.11.025