Mo膜热退火对CuInSe2薄膜织构和太阳能电池性能的影响 - CSDN文库

52 浏览量更新于2024-08-28 收藏 928KB PDF 举报

"Mo膜热退火对CuInSe2层织构和器件性能的影响研究" Mo膜热退火对CuInSe2层织构和器件性能的影响是当前太阳能电池领域中的一个热门研究方向。在这篇论文中，研究人员对Mo膜的热退火对CuInSe2层织构和器件性能的影响进行了深入研究。首先，让我们来了解什么是Mo膜热退火。Mo膜热退火是指将Mo膜在高温下加热，以提高其电导率和粘附性。这种处理可以改善Mo膜的电导率和粘附性，从而提高CuInSe2薄膜的质量。研究人员发现，Mo膜热退火可以改变In2Se3前体的取向，并影响CuInSe2晶体的织构。热退火后的Mo膜有利于CuInSe2薄膜的生长，并使CuInSe2薄膜呈现出(220/204)取向。这项研究结果对CuInSe2太阳能电池的发展具有重要意义。CuInSe2太阳能电池是当前最具前途的太阳能电池之一，但其性能还不够稳定。通过Mo膜热退火，可以提高CuInSe2太阳能电池的性能和稳定性。此外，这项研究还对CuInSe2太阳能电池的器件性能产生了影响。研究人员发现，Mo膜热退火可以提高CuInSe2太阳能电池的转换效率和稳定性。这项结果对CuInSe2太阳能电池的工业化生产具有重要意义。 Mo膜热退火对CuInSe2层织构和器件性能的影响研究结果具有重要的科学价值和实践意义。这项研究结果对CuInSe2太阳能电池的发展和应用具有重要影响。关键词：Mo膜热退火、CuInSe2太阳能电池、织构、器件性能。在这项研究中，研究人员使用了X射线衍射（XRD）和扫描电子显微镜（SEM）等技术来分析Mo膜和CuInSe2薄膜的织构和表面形貌。结果表明，Mo膜热退火可以显著改善CuInSe2薄膜的织构和表面形貌，从而提高CuInSe2太阳能电池的性能和稳定性。此外，研究人员还对CuInSe2太阳能电池的器件性能进行了研究。结果表明，Mo膜热退火可以提高CuInSe2太阳能电池的转换效率和稳定性。这项结果对CuInSe2太阳能电池的工业化生产具有重要意义。 Mo膜热退火对CuInSe2层织构和器件性能的影响研究结果具有重要的科学价值和实践意义。这项研究结果对CuInSe2太阳能电池的发展和应用具有重要影响。

The effect of thermal annealing of Mo ﬁlm on the CuInSe

2

layer texture

and device performance

Jun Tong

a,b,d

, Hai-Lin Luo

b

, Zhu-An Xu

a

, Hao Zeng

d

, Xu-Dong Xiao

b,c

, Chun-Lei Yang

b,

n

a

Department of Physics, Zhejiang University, Hangzhou 310027, China

b

Center for Photovoltaic Solar Cells, Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, Shenzhen 510275, China

c

Department of Physics, The Chinese University of Hong Kong, Shatin, New Territory, Hong Kong, China

d

Department of Physics, University at Buffalo, the State of New York, New York 14222, USA

article info

Available online 16 July 2013

Keywords:

Molybdenum annealing treatment

CuInSe

2

solar cell

Texture

abstract

The inﬂuence of annealing treatment of molybdenum (Mo) ﬁlm on the growth of CuInSe

2

(CIS) thin ﬁlm

has been studied. We show that Mo ﬁlm is with much better electrical conductivity and adhesion after

being annealed in vacuum. It is found that annealing of Mo ﬁlm not only modiﬁes the orientation of

In

2

Se

3

(IS) precursor, but also the texture of CIS crystal. Thermally treated Mo ﬁlm favors the growth of

(220/204) oriented CIS ﬁlm. CIS solar cell grown on annealed Mo ﬁlm is found to be with higher device

efﬁciency, which is attributed to the increased ﬁll factor (FF).

& 2013 Elsevier B.V. All rights reserved.

1. Introduction

CuInSe

2

(CIS) based polycrystalline thin- ﬁlm has been regarded

to be promising material for photovoltaic applications [1]. A record

efﬁciency of 20.3% for small-area thin ﬁlm solar cell has been

achieved for its alloy Cu(In,Ga)Se

2

(CIGS) [2] which is prepared

using the so-called “three-stage” co-evaporation technique. Typical

structure of this kind of solar cell takes Mo ﬁlm as the back contact

layer, since Mo shows low contact-resistance to the absorber layer

and is with strong chemical and physical stability. Most often, Mo

ﬁlm is deposited on soda-lime glass (SLG) using direct current (DC)

sputtering which is proved to be superior to other methods such

as radio frequency (RF) sputtering [3].

Mo ﬁlm not only acts as the back electrode, but also behaves as

the substrate for the following absorber growth. Then the nuclea-

tion and growth of CIS/CIGS are certainly inﬂuenced by the

orientation and surface structure/morphology of the Mo ﬁlm.

To ﬁnd optimized Mo ﬁlm for solar cell, many research works have

been done to study its adhesion, sheet resistivity, stress and texture.

Sputtering power and gas pressure have been studied in detail to

show their inﬂuence on the mechanical, microstructure and elec-

tronic properties of Mo ﬁlms and the corresponding effect on the

performance of solar cell devices [3–6]. However, few works have

been done to check the annealing effect on Mo ﬁlm [7].

In this work, we have studied the inﬂuence of annealing Mo on

the solar cell device performance. To reduce uncertainties in the

experiments, we will only focus on CIS without adding Ga to

eliminate alloy ﬂuctuation. Certainly, the conclusions drawn will

also be instructive to the growth of CIGS. The X-ray diffraction

patterns show that Mo annealing will ﬁrstly modify the orienta-

tion of In

2

Se

3

(IS) precursor, then change the orientation of CIS

thin ﬁlm. We demonstrate that higher efﬁciency device can be

fabricated on annealed Mo ﬁlm which is mainly due to the

increased ﬁll factor (FF).

2. Experiments

2.1. Materials growth

The solar cell device has a structure of 2 mm SLG=1 μmbi-layer

structure Mo=2:2 μm CIS/50 nm CdS/50 nm i-ZnO/500 nm AZO=3 μm

Al grids, which is similar to that of NREL [4].

SLG (10 cm  10 cm  2 mm) substrate is ﬁrstly washed using

soap. Then it is cleaned in ultrasound bath using DI water and

dried with high pressure N

2

gas. It is de-gassed by heating in a

high vacuum chamber. After that the SLG could be transported

into the Mo ﬁlm sputtering chamber without being exposed to air.

Mo ﬁlm is deposited by an in-line DC magnetron sputtering

system with a 10 cm  24.5 cm rectangular Mo target (purity,

99.99%). The SLG substrate sitting 7 cm above the target moves

back and forth to get a homogeneous Mo ﬁ lm with desired

thickness. The base pressure of the chamber was close to

1  10

−5

Pa and the argon (Ar) gas (99.999%) was injected into

the chamber at a ﬂow rate of 10 sccm during deposition. A series

of Mo ﬁlms have been deposited with the working pressure

varying from 0.3 to 0.05 Pa, and the power varying from 350 to

500 W. After deposition, Mo ﬁlm is transported into a high

Contents lists available at ScienceDirect

journal homepage: www.elsevier.com/locate/solmat

Solar Energy Materials & Solar Cells

0927-0248/$ - see front matter & 2013 Elsevier B.V. All rights reserved.

http://dx.doi.org/10.1016/j.solmat.2013.06.039

n

Corresponding author. Tel.: + 011 86 13632398049.

E-mail addresses: cl.yang@siat.ac.cn, tj198754@sina.com (C.-L. Yang).

Solar Energy Materials & Solar Cells 119 (2013) 190–195

下载后可阅读完整内容，剩余5页未读，立即下载

weixin_38688145

粉丝: 3
资源: 962

最新资源