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Progress in Natural Science: Materials International
journal homepage: www.elsevier.com/locate/pnsmi
Original Research
Spin dynamics characteristics of nitrogen vacancy spins in diamond films
using enhanced Raman shift with spin microscopy
Ren Ren
a,
⁎
, Yaru Guo
a
, Jin Xu
b
, Dandan Xue
a
, Bai Yan
a
, Xuan Li
a
a
Department of Physics, MOE Key Lab for Non-equilibrium, Xi’an Jiaotong University, Xian 710054, China
b
Institute of Biomedical Engineering, Xi’an Jiaotong University, Xian 710054, China
ARTICLE INFO
Keyword:
Diamond films
Dynamics of nitrogen vacancy
Spin-orbit dynamics
Raman shift
Spin microscopy
ABSTRACT
The diamond films were deposited on a Si substrate with chemical vapor deposition MCVD using methane-
hydrogen gas. Raman active phonon and sp
2
/sp
3
ratio in diamond/Si(100) films were investigated by Raman
spectra in the difference scattering configurations. Furthermore, the Raman scattering spectrum of diamond/Si
(100) hetero-junction was measured with different thickness to investigate the spin dynamics of nitrogen va-
cancy spins. The Fluorescence scanning microscopy indicated that nitrogen vacancy center electron spin was
coupled to the host nitrogen nuclear spin by the electron spin resonance. The strong peak of 1332 cm
−1
dis-
played the F
2g
symmetry of diamond, while the broad E
2g
mode peak of 1550 cm
−1
was a broad band G mode,
and 1150 cm
−1
peak corresponded to the nano-diamond and disordered graphitic carbon form with disordered
SP
2
hybridization. The Raman spectra of the diamond films were observed as a function of the residual stress,
crystal size and their orientation. The peaks of 1132 cm
−1
and 1480 cm
−1
were associated with hydrogen
bonding. The transport of diamond exhibited sp
3
spin related effect. The diamond/Si(100) PDOS is the results of
spin-related couple of sp
3
, p and d orbital hybridization. The spin dynamics was achieved by the orbital com-
petition, strong crystal field and charge order.
1. Introduction
Hydrogenated diamond magneto-transport oxides are one of the
most promising materials for the fabrication of optoelectronic devices.
Raman scattering is known as a powerful technique to research the
electronic dynamics caused by phonon confinement and electron-pho-
nons. The doped diamond/Si hetero-junction displays charge carriers at
the hydrogen-terminated surface of diamond and competition coupling
of spins, charge, and lattice order. H-diamond is a most popular semi-
conductor material with a wide band gap (5.45 eV), electric breakdown
field 10,000 (kV/cm), electric mobility 4500(cm
2
/V s), hole mobility
3800(cm
2
/V s) and thermal conductivity 22 (W/K cm). Si (N type) is a
most popular semiconductor material with a wide band gap (3.37 eV)
and large exciton binding energy (60 meV), and potentially possesses
the characteristics of high efficiency, lower power, light emitting and
laser diodes. The hetero-junction diamond/Si having semi-metallic
property with high mobility in diamond and spin-related anomalous
electrons transport behavior can be obtained in diamond/Si. Although
Raman spectra of other diamond have been reported, there is no in-
formation on the lattice diamond in hetero-junction films as well as the
specific aspects of phonon-electron interaction and isotopic effects are
not mentioned.
The studies in recent years have been focused on the bulk diamond
crystals. With the trend in developing low dimension and more hetero-
junction diamond/Si device, low dimension nanostructures diamond
have become more desirable. Moreover, the defects diamond thin films
are to be essential for their hetero-junction potential applications. The
nitrogen-vacancy (NV) centers consist of a substitutional nitrogen va-
cancy electron spin and an adjacent N
14
nuclear spin [1–7]. This nu-
clear spin solid-state qubit exhibits excellent properties such as mag-
netic resonance force microscopy and Squit [8], fast microwave
manipulation, quantum preparation and optical detection [9], and long
coherence time even at room temperature [10]. It has been demon-
strated that a single nuclear NV center can be initialized, measured, and
manipulated atom flexibly [11,12], as well as it was available in
memory and communication, tunability in strong-coupling limit co-
herence [13]. It can be read out with high fidelity even under complex
ambient conditions. The diamond film will be obtained large magneto-
resistance when the field is added.
In this letter, Raman scattering study of diamond/Si hetero-junction
is reported to investigate spin-related dynamics from doped surface.
The crystal diamond/Si(100) has been prepared to explore spin
https://doi.org/10.1016/j.pnsc.2018.07.002
Received 23 August 2017; Received in revised form 23 July 2018; Accepted 23 July 2018
⁎
Corresponding author.
E-mail addresses: ren@mail.xjtu.edu.cn (R. Ren), xujinxjtu@163.com (J. Xu).
Progress in Natural Science: Materials International 28 (2018) 647–652
Available online 05 September 2018
1002-0071/ © 2018 Chinese Materials Research Society. Published by Elsevier B.V. This is an open access article under the CC BY-NC-ND license
(http://creativecommons.org/licenses/BY-NC-ND/4.0/).
T