iC-MB4: BiSS接口主控制器技术规格

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"iC-MB4 是一款专为实现 BiSS (Bidirectional Sensor Interface Serial Protocol) 协议的单芯片主控制器，同时也支持 SSI (Synchronous Serial Interface) 协议。这款芯片允许用户与多达8个从设备进行双向通信，每个从设备的数据长度可达64位，并且支持高达16位的CRC校验，确保数据传输的准确性。" iC-MB4 的主要特性包括： 1. **双向BiSS通信**：iC-MB4 支持与多达8个从设备的双向通信，这使得它在多传感器系统中尤为适用，可以实现复杂的双向数据交换。 2. **支持SSI协议**：除了BiSS协议，该芯片还支持单向数据传输的SSI协议，适用于各种传感器和执行机构。 3. **同步传感器数据采集**：能够进行循环数据传输，数据传输速率最高可达10Mbit/s，确保高效的数据获取。 4. **可配置接口**：支持TTL、CMOS、RS422和LVDS等多种接口标准，适应不同环境和应用需求。 5. **线延迟和转换时间自动补偿**：iC-MB4 自动处理从设备之间的线延迟和转换时间差异，优化通信性能。 6. **分立内存银行**：这一功能使得在BiSS传感器数据传输过程中，控制器仍能自由访问其他内存区域。 7. **数据长度可配置**：每个从设备的数据长度可单独设置，最大为64位，增强了灵活性。 8. **CRC校验**：采用高达16位的CRC多项式，提供强大的数据完整性验证。 9. **串行和并行接口**：支持SPI兼容模式的串行通信，以及8位数据/地址总线的并行接口，兼容Intel和Motorola设备。 10. **电源及温度范围**：单3V至5V供电，工作在工业温度范围内，保证了在严苛环境下的稳定运行。 iC-MB4 应用于多种领域，如： 1. **双向通信**：在多传感器系统中，实现高效的双向信息交换。 2. **线性与旋转编码器**：用于高精度的位置和速度测量。 3. **电机反馈系统**：在电机控制中提供精确的反馈信息。 4. **PLC系统**：在可编程逻辑控制器中作为数据通信的核心。 5. **驱动系统**：为驱动设备提供精确的传感器数据。封装形式为QFN28，尺寸为5mmx5mm，适合紧凑型设计。iC-MB4 是一种高度集成、功能强大的BiSS/SSI主控芯片，适用于需要高数据速率和可靠性的工业自动化和传感器系统。

preliminary preliminary

iC-MB4

BiSS INTERFACE MASTER

Rev C1, Page 8/42

ELECTRICAL CHARACTERISTICS

Operating Conditions: VDD = 3.0 V. . . 5.5 V, Tj = -40. . . 125 °C, unless otherwise stated

Item Symbol Parameter Conditions Unit

No. Min. Typ. Max.

Total Device

001 VDD Permissible Supply Voltage 3 5.5 V

002 I(VDD) Supply Current in VDD outputs not loaded, f(CLK) = 20 MHz 20 mA

003 Vc()hi

Clamp Voltage hi at all pins ex-

cluding VDD, GND, MA1, MO1,

SL1

Vc()hi = V() - VDD, I() = 1 mA; outputs tristate 0.3 1.75 V

004 Vc()lo

Clamp Voltage lo at all pins ex-

cluding VDD, GND

I() = -1mA; outputs tristate -1.6 -0.3 V

µC Interface: CFGSPI, INT_NMOT, NCS, ALE, NRD_RNW, NWR_E, DB7...0

A01

Vs()hi Saturation Voltage hi at DB7...0

Vs()hi = VDD - V();

VDD = 4.5 V, I() = -4 mA 0.4 V

VDD = 3 V; I() = -2 mA 0.4 V

A02

Vs()lo Saturation Voltage lo at DB7...0

VDD = 4.5 V, I() = 4 mA 0.4 V

VDD = 3 V, I() = 2 mA 0.4 V

A03 Vt()hi

Threshold Voltage hi at CFGSPI,

INT_NMOT, NCS, ALE,

NRD_RNW, NWR_E, DB7...0

2 V

A04 Vt()lo

Threshold Voltage lo at CFGSPI,

INT_NMOT, NCS, ALE,

NRD_RNW, NWR_E, DB7...0

0.8 V

A05 Vt()hys

Threshold Voltage Hysteresis at

CFGSPI, INT_NMOT, NCS, ALE,

NRD_RNW, NWR_E, DB7...0

150 250 mV

A06

Ipd() Pull-Down Current at CFGSPI,

INT_NMOT, ALE, DB7...0

VDD = 4.5 V, V() = 1 V ... V(VDD) 6 30 60 µA

VDD = 3 V, V() = 1 V ... V(VDD) 3 30 60 µA

A07

Ipu() Pull-Up Current at NCS,

NRD_RNW, NWR_E

VDD = 4.5 V, V() = 0 V ... V(VDD) - 1 V -60 -30 -6 µA

VDD = 3 V, V() = 0 V ... V(VDD) - 1 V -60 -30 -3 µA

BiSS/SSI Interface

B01 Rpu()

Pull-up Resistor at SL1,

SL2_NSL1

50 kΩ

BiSS/SSI Interface: TTL/CMOS Mode (CFGIF = 00 or 01)

B02

Vs()hi Saturation Voltage hi at MA1,

MO1, MA2_NMA1, MO2_NMO2

V() = V(VDD) - V();

VDD = 4.5 V, I() = -4 mA 0.4 V

VDD = 3 V, I() = -2 mA 0.4 V

B03

Vs()lo Saturation Voltage lo at MA1,

MO1, MA2_NMA1, MO2_NMO2

VDD = 4.5 V, I() = 4 mA 0.4 V

VDD = 3 V, I() = 2 mA 0.4 V

BiSS/SSI Interface: TTL Mode (CFGIF = 00)

B04 Vt()hi

Threshold Voltage hi at SL,

SL2_NSL1

2 V

B05 Vt()lo

Threshold Voltage lo at SL,

SL2_NSL1

0.8 V

B06 Vt()hys Hysteresis at at SL, SL2_NSL1 150 300 mV

BiSS/SSI Interface: CMOS Mode (CFGIF = 01)

B07 Vt()hi

Threshold Voltage hi at SL,

SL2_NSL1

62 70 %VDD

B08 Vt()lo

Threshold Voltage lo at SL,

SL2_NSL1

33 39 %VDD

B09 Vt()hys Hysteresis at at SL, SL2_NSL1 0.7 1.13 V

BiSS/SSI Interface: RS422 Mode (CFGIF = 10, VDD = 4.5 V ... 5.5 V)

B10

Vs()hi Saturation Voltage hi at MA1,

MO1, MA2_NMA1, MO2_NMO2

V() = V(VDD) - V(); I() = -50 mA 1.2 V

B11

Vs()lo Saturation Voltage lo at MA1,

MO1, MA2_NMA1, MO2_NMO2

I() = 50 mA 1.2 V

B12 Vcom()

Input Voltage Range at SL,

SL2_NSL1

0 3 V

preliminary preliminary

iC-MB4

BiSS INTERFACE MASTER

Rev C1, Page 9/42

ELECTRICAL CHARACTERISTICS

Operating Conditions: VDD = 3.0 V. . . 5.5 V, Tj = -40. . . 125 °C, unless otherwise stated

Item Symbol Parameter Conditions Unit

No. Min. Typ. Max.

B13 Vtdiff() Threshold Voltage at

SL - SL2_NSL1

V()=V(P) - V(N) -300 300 mV

B14 Vthys() Hysteresis Voltage at

SL - SL2_NSL1

V()=V(P) - V(N) 75 150 mV

BiSS/SSI Interface: LVDS Mode (CFGIF = 11)

B15

Vs()hi Output Voltage hi at MA1, MO1,

MA2_NMA1, MO2_NMO2

RL = 100 Ω

VDD = 4.5 V ... 5.5 V 1.25 1.6 V

VDD = 3.0 V ... 3.6 V 1.0 1.6 V

B16

Vs()lo Output Voltage lo at MA1, MO1,

MA2_NMA1, MO2_NMO2

RL = 100 Ω

VDD = 4.5 V ... 5.5 V 0.9 1.125 V

VDD = 3.0 V ... 3.6 V 0.7 1.125 V

B17

Vadiff Differential Output Voltage at

MA1 - MA2_NMA1,

MO1 - MO2_NMO2

RL = 100 Ω

VDD = 4.5 V ... 5.5 V 250 350 450 mV

VDD = 3.0 V ... 3.6 V 220 350 450 mV

B18

Vacm Common Mode Output Voltage lo

at MA1, MO1, MA2_NMA1,

MO2_NMO2

RL = 100 Ω

VDD = 4.5 V ... 5.5 V 1.125 1.2 1.375 V

VDD = 3.0 V ... 3.6 V 0.9 1.15 1.375 V

B19

Vcom() Input Voltage Range at SL,

SL2_NSL1

VDD = 4.5 V ... 5.5 V 0.8 3 V

VDD = 3.0 V ... 3.6 V 0.8 1.8 V

B20 Vtdiff() Threshold Voltage at

SL - SL2_NSL1

V()=V(P) - V(N) -150 150 mV

B21

Vthys() Hysteresis Voltage at

SL - SL2_NSL1

V()=V(P) - V(N)

VDD = 4.5 V ... 5.5 V 25 70 mV

VDD = 3.0 V ... 3.6 V 14 40 mV

I/O Ports: EOT, NER, GETSENS

C01

Vs()hi Saturation Voltage hi at EOT

Vs()hi = VDD - V();

VDD = 4.5 V, I() = -4 mA 0.4 V

VDD = 3 V; I() = -2 mA 0.4 V

C02

Vs()lo Saturation Voltage lo at EOT,

NER

VDD = 4.5 V, I() = 4 mA 0.4 V

VDD = 3 V, I() = 2 mA 0.4 V

C03 Vt()hi

Threshold Voltage hi at NER,

GETSENS

2 V

C04 Vt()lo

Threshold Voltage lo at NER,

GETSENS

0.8 V

C05 Vt()hys

Threshold Voltage Hysteresis at

NER, GETSENS

150 250 mV

C06

Ipd() Pull-Down Current at GETSENS

VDD = 4.5 V, V() = 1 V ... V(VDD) 6 30 60 µA

VDD = 3 V, V() = 1 V ... V(VDD) 3 30 60 µA

C07 Ipu() Pull-Up Current at NER V() = 0 V ... V(VDD) - 1 V -950 -300 -35 µA

C08

Tw(GETSENS)

Minimum duration of GETSENS

pulse

1/f(CLK)

Oscillator: CLK

D01 f(CLK)

Permissible external Clock Rate

at CLK

Duty cycle 48% . . . 52% 20 25 MHz

D02 Vt(CLK)hi Threshold Voltage hi 2 V

D03 Vt(CLK)lo Threshold Voltage lo 0.4 V

D04 Vt(CLK)hys Threshold Voltage Hysteresis 150 250 mV

D05

f(CLKI) Internal Oscillator Clock

Frequency

VDD = 4.5 V ... 5.5 V 15 20 25 MHz

VDD = 3.0 V ... 3.6 V 10 15 22 MHz

D06

Ipd() Pull-Down Current at CLK

VDD = 4.5 V, V() = 1.5 V ... VDD 6 30 60 µA

VDD = 3 V, V() = 1.5 V ... VDD 3 30 60 µA

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