TI ISO5451：高CMTI隔离式IGBT MOSFET栅极驱动器

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"TI-ISO5451.pdf 是一款由德州仪器(Texas Instruments)发布的数据手册，详细介绍了ISO5451型号的隔离式IGBT和MOSFET栅极驱动器。该驱动器设计用于高共模瞬态抗扰度(CMTI)应用，具备多种保护功能和优化的性能指标。" TI-ISO5451是一款高性能的隔离式栅极驱动器，主要用于驱动IGBT和MOSFET等功率开关元件。它在VCM(共模瞬态电压)为1500V时，具有高CMTI，最小值为50kV/μs，典型值达到100kV/μs，这确保了其在高压环境下的稳定工作能力。驱动器的主要特性包括： 1. 能够提供2.5A的峰值拉电流和5A的峰值灌电流，适用于大电流驱动需求。 2. 短暂传播延迟时间非常低，典型值为76ns，最大值为110ns，有助于实现快速响应的系统控制。 3. 内置2A的有源米勒钳位电路，可以有效防止栅极过冲，保护器件安全。 4. 集成了输出短路保护功能，当检测到去饱和故障时，通过FLT引脚发出故障报警，并通过RST引脚进行复位操作。 5. 具备就绪(RDY)引脚，可以指示输入和输出电源的欠压锁定状态，便于系统监控和诊断。 6. 输出端具有有源下拉特性，即使在输入电源或输入信号悬空时，也能保持输出低电平，提高了系统的可靠性。 7. 输入电源电压范围为3V至5.5V，输出驱动器电源电压为15V至30V，兼容CMOS逻辑输入。 8. 设计有抑制短于20ns输入脉冲和瞬态噪声的能力，降低了噪声对系统的影响。 9. 可在-40°C至+125°C的宽温范围内正常工作，适应各种环境条件。 10. 隔离电压峰值可达10000V，确保了电气隔离的安全性。这款驱动器是工业、电力和自动化领域中高压、高速开关应用的理想选择，尤其适用于需要高共模瞬态抗扰度和严格保护功能的系统设计。通过使用TI-ISO5451，工程师可以构建更可靠、更高效的功率转换系统。

ISO5451

ZHCSDT1C –JUNE 2015–REVISED JANUARY 2017

www.ti.com.cn

7.7 Safety-Related Certifications

VDE CSA UL CQC TUV

Certified according to DIN

V VDE V 0884-10

(VDE V 0884-10):2006-12

and DIN EN 60950-1

(VDE 0805 Teil 1):2011-

Certified according to CSA

Component Acceptance

Notice 5A, IEC 60950-1

and IEC 60601-1

Certified according to UL

1577 Component

Recognition Program

Certified according to GB

4943.1-2011

Certified according to

EN 61010-1:2010 (3rd Ed)

and

EN 60950-

1:2006/A11:2009/A1:2010

A12:2011/A2:2013

Reinforced Insulation

Maximum Transient

isolation voltage, 8000

;

Maximum surge isolation

voltage, 6250 V

Maximum repetitive peak

isolation voltage, 1420

Isolation Rating of 5700

RMS

;

Reinforced insulation per

CSA 60950- 1- 07+A1+A2

and IEC 60950-1 (2nd

Ed.), 800 V

RMS

max

working voltage (pollution

degree 2, material group

I);

2 MOPP (Means of

Patient Protection) per

CSA 60601-1:14 and IEC

60601-1 Ed. 3.1, 250

RMS

(354 V

) max

working voltage

Single Protection, 5700

RMS

Reinforced Insulation,

Altitude ≤ 5000m, Tropical

climate, 400 V

RMS

maximum working voltage

5700 V

RMS

Reinforced

insulation per

EN 61010-1:2010 (3rd Ed)

up to working voltage of

600 V

RMS

5700 V

RMS

Reinforced

insulation per

EN 60950-

1:2006/A11:2009/A1:2010

A12:2011/A2:2013 up to

working voltage of 800

RMS

Certification completed

Certificate number:

40040142

Certification completed

Master contract

number:220991

Certification completed

File number: E181974

Certification completed

Certificate number:

CQC16001141761

Certification completed

Client ID number: 77311

(1) Input, output, or the sum of input and output power should not exceed this value

7.8 Safety Limiting Values

Safety limiting intends to minimize potential damage to the isolation barrier upon failure of input or output circuitry. A failure of

the I/O can allow low resistance to ground or the supply and, without current limiting, dissipate sufficient power to overheat

the die and damage the isolation barrier, potentially leading to secondary system failures.

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

Safety input, output or supply current

θJA

= 99.6°C/W, V

= 3.6 V, T

= 150°C,

= 25°C

349

θJA

= 99.6°C/W, V

= 5.5 V, T

= 150°C,

= 25°C

228

θJA

= 99.6°C/W, V

= 15 V, T

= 150°C,

= 25°C

θJA

= 99.6°C/W, V

= 30 V, T

= 150°C,

= 25°C

Safety input, output, or total power R

θJA

= 99.6°C/W, T

= 150°C, T

= 25°C 1255

(1)

Maximum ambient safety

temperature

150 °C

The safety-limiting constraint is the maximum junction temperature specified in the data sheet. The power

dissipation and junction-to-air thermal impedance of the device installed in the application hardware determines

the junction temperature. The assumed junction-to-air thermal resistance in the Thermal Information table is that

of a device installed on a high-K test board for leaded surface-mount packages. The power is the recommended

maximum input voltage times the current. The junction temperature is then the ambient temperature plus the

power times the junction-to-air thermal resistance.

ISO5451

www.ti.com.cn

ZHCSDT1C –JUNE 2015–REVISED JANUARY 2017

(1) I

for IN–, RST pin is zero as they are pulled high internally.

(2) I

for IN+ is zero, as it is pulled low internally.

7.9 Electrical Characteristics

Over recommended operating conditions unless otherwise noted. All typical values are at T

= 25°C, V

CC1

= 5 V, V

CC2

–

GND2 = 15 V, GND2 – V

EE2

= 8 V

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

VOLTAGE SUPPLY

IT+(UVLO1)

Positive-going UVLO1 threshold voltage

input side (V

CC1

– GND1)

2.25 V

IT-(UVLO1)

Negative-going UVLO1 threshold voltage

input side (V

CC1

– GND1)

1.7 V

HYS(UVLO1)

UVLO1 Hysteresis voltage (V

IT+

– V

IT–

)

input side

0.24 V

IT+(UVLO2)

Positive-going UVLO2 threshold voltage

output side (V

CC2

– GND2)

12 13 V

IT-(UVLO2)

Negative-going UVLO2 threshold voltage

output side (V

CC2

– GND2)

9.5 11 V

HYS(UVLO2)

UVLO2 Hysteresis voltage (V

IT+

– V

IT–

)

output side

1 V

Input supply quiescent current 2.8 4.5 mA

Output supply quiescent current 3.6 6 mA

LOGIC I/O

IT+(IN,RST)

Positive-going input threshold voltage (IN+,

IN–, RST)

0.7 × V

CC1

IT-(IN,RST)

Negative-going input threshold voltage

(IN+, IN–, RST)

0.3 × V

CC1

HYS(IN,RST)

Input hysteresis voltage (IN+, IN–, RST) 0.15 × V

CC1

High-level input leakage at (IN+)

(1)

IN+ = V

CC1

100 µA

Low-level input leakage at (IN–, RST)

(2)

IN– = GND1, RST = GND1 –100 µA

Pull-up current of FLT, RDY V

(RDY)

= GND1, V

(FLT)

= GND1 100 µA

Low-level output voltage at FLT, RDY I

(FLT)

= 5 mA 0.2 V

GATE DRIVER STAGE

(OUTPD)

Active output pulldown voltage I

OUT

= 200 mA, V

CC2

= open 2 V

(OUTH)

High-level output voltage I

OUT

= –20 mA V

CC2

– 0.5 V

CC2

– 0.24 V

(OUTL)

Low-level output voltage I

OUT

= 20 mA V

EE2

+ 13 V

EE2

+ 50 mV

(OUTH)

High-level output peak current

IN+ = high, IN– = low,

OUT

= V

CC2

- 15 V

1.5 2.5 A

(OUTL)

Low-level output peak current

IN+ = low, IN– = high,

OUT

= V

EE2

+ 15 V

3.4 5 A

ACTIVE MILLER CLAMP

(CLP)

Low-level clamp voltage I

(CLP)

= 20 mA V

EE2

+ 0.015 V

EE2

+ 0.08 V

(CLP)

Low-level clamp current V

(CLAMP)

= V

EE2

+ 2.5 V 1.6 2.5 A

(CLTH)

Clamp threshold voltage 1.6 2.1 2.5 V

SHORT CIRCUIT CLAMPING

(CLP_OUT)

Clamping voltage

OUT

- V

CC2

)

IN+ = high, IN– = low, t

CLP

=10 µs,

(OUTH)

= 500 mA

0.8 1.3 V

(CLP_CLAMP)

Clamping voltage

CLP

- V

CC2

)

IN+ = high, IN– = low, t

CLP

=10 µs,

(CLP)

= 500 mA

1.3 V

(CLP_CLAMP)

Clamping voltage at CLAMP

IN+ = High, IN– = Low, I

(CLP)

= 20

0.7 1.1 V

DESAT PROTECTION

(CHG)

Blanking capacitor charge current V

(DESAT)

- GND2 = 2 V 0.42 0.5 0.58 mA

(DCHG)

Blanking capacitor discharge current V

(DESAT)

- GND2 = 6 V 9 14 mA

(DSTH)

DESAT threshold voltage with respect to

GND2

8.3 9 9.5 V

(DSL)

DESAT voltage with respect to GND2,

when OUT is driven low

0.4 1 V

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