基于场屏蔽分析的高速uni-traveling-carrierphotodiode饱和特性研究

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"研究高速uni-traveling-carrier光二极管饱和特性的Field Screening分析" 基于Field Screening分析的高速uni-traveling-carrier光二极管饱和特性研究是当前半导体光电子领域的热点话题之一。该研究通过对InGaAs/InP高饱和光二极管的fabrication和测试，探讨了其饱和特性，并对其电场分布进行了详细分析。首先，研究者设计并fabricated了一种新的高饱和光二极管结构，即背照式mesa-结构InGaAs/InP高饱和光二极管。该结构能够提供高达0.83 A/W的responsivity和高达275 mA的直流饱和电流。同时，该结构还能够提供高达20.1 dBm的输出射频功率。其次，研究者对该光二极管的饱和特性进行了详细分析。通过对电场分布的分析，研究者发现该光二极管的饱和特性主要取决于电场分布的不均匀性。同时，研究者还发现该光二极管的饱和特性也受到电流密度和温度的影响。此外，研究者还对该光二极管的频率响应特性进行了研究。结果表明，该光二极管能够提供高达9 GHz的3 dB截止频率和高达100 mA的1 dB压缩点。这使得该光二极管非常适合高速数据传输和微波通信应用。本研究结果表明了基于Field Screening分析的高饱和光二极管的饱和特性研究对于高速数据传输和微波通信应用具有重要的意义。该研究结果为高速数据传输和微波通信应用提供了有价值的参考。关键词：uni-traveling-carrier光二极管、饱和特性、Field Screening分析、高速数据传输、微波通信。知识点： * uni-traveling-carrier光二极管是一种高速光二极管结构，能够提供高达0.83 A/W的responsivity和高达275 mA的直流饱和电流。 * Field Screening分析是一种常用的电场分布分析方法，能够用于研究高饱和光二极管的饱和特性。 * 高速数据传输和微波通信应用需要高速光二极管，基于Field Screening分析的高饱和光二极管研究结果为这些应用提供了有价值的参考。 * 电场分布的不均匀性是影响高饱和光二极管饱和特性的主要因素。 * 高饱和光二极管的饱和特性也受到电流密度和温度的影响。

COL 9(8), 082302(2011) CHINESE OPTICS LETTERS August 10, 2011

Study on the saturation characteristics of high-speed

uni-traveling-carrier photodiodes based on

field screening analysis

Tuo Shi (

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ÿÿÿ

), Bing Xiong (

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)

∗

, Changzheng Sun (

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), and Yi Luo (

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)

Tsinghua National Laboratory for Information Science and Technology, State Key Lab on Integrated Optoelectronics,

Department of Electronic Engineering, Tsinghua University, Beijing 100084, China

∗

Corresponding author: bxiong@tsinghua.edu.cn

Received February 28, 2011; accepted March 25, 2011; posted online May 31, 2011

A back-illuminated mesa-structure InGaAs/InP charge-compensated uni-traveling-carrier (UTC) photodi-

ode (PD) is fabricated, and its saturation characteristics are investigated. The responsivity of the 40-µm-

diameter PD is as high as 0.83 A/W, and the direct current (DC) saturation current is up t o 275 mA. The

1-dB compression point at the 3-dB cutoff frequency of 9 GHz is measured to be 100 mA, corresponding

to an output radio frequency (RF) power of up to 20.1 dBm. According to t he calculated electric field

distributions in the depleted region under both DC and alternating current (AC) conditions, t he saturation

of the UTC-PD is caused by complete field screening at high optical injection levels.

OCIS codes: 230.5170, 250.0040.

doi: 10.3788/COL201109.082302.

Analog optical links are favored for many microwave ap-

plications, such as phased array antennas and wireless-

over-fiber systems, due to their advantages of low trans-

mission loss, wide bandwidth, reduced size and weight,

and immunity to electro magnetic interference

[1−3]

. To

improve the perfor mances of the analog links, such as

link gain, noise figure, and spurious-free dynamic range

(SFDR), one of the key issues that must b e considered

is utilizing photodiodes (PDs) possessing high quan-

tum efficiency and the ability to handle high optical

power, i.e., PDs with high responsivity and high sat-

uration photocurrent

[4]

. Many studies have been un-

dertaken to increase the responsiv ity, such as tho se on

evanescently coupled photodiodes combined with mul-

timode diluted waveguide

[5]

and three-mirror cavity

photodetector

[6]

. Meanwhile, research on improving the

saturation performance of PDs has attracted plenty of at-

tention. Various device structures, such as uni-traveling-

carrier (UTC)

[7,8]

, partially depleted-absorber

[9]

and

dual-depletion region

[10]

, have been proposed to im-

prove the bandwidth and sa tur ation photocurrent of

PDs by tailoring carrier traveling process in the deple-

tion region. Moreover, optimizing the electric field in the

depletion re gion can modulate the electron drift velocity,

thus re lieving the carrier pileup and increasing response

sp e ed

[11,12]

. Due to the car rier pileup in the depletion

region under high current, space-charge effect, which

causes the electric field redistribution, degrades the per-

formance of a PD at high optical injection levels, lead-

ing to output radio freq uency (RF) power compressio n,

bandwidth reduction, and significant nonlinearity

[13]

However, to the best of our knowledge, there have only

been relatively few reports on the relatio nship b etween

the electric field distribution and the estimation of PD

saturation performance, which is crucial for applications

requiring high output RF power.

In this letter, we report the fabrication and ana lysis

of a high performance, modified UTC-PD designed for

analog optical link applications. The UTC-PD exhibits

responsivity of up to 0.83 A/W and a high direct current

(DC) saturation current of 275 mA. The 1-dB compres-

sion point is 100 mA at the 3- dB cutoff frequency of 9

GHz, corresponding to a RF output power of as high

as 20.1 dBm. The electric field distribution within the

UTC-PD under the DC and alternating current (AC)

conditions are calculated, and complete field screening

is found to be the cause of the measured saturation per-

formance of the device. This study makes it possible to

estimate the saturation characteristics of PDs by analyz-

ing the electric field distr ibution.

The epitaxial layer structure of our UTC-PD is shown

in Fig. 1, which is similar to the one depicted in Ref.

[14]. The intrinsic layers were lightly doped to provide a

Fig. 1. Epitaxial layer structure of the modified UTC-PD.

1671-7694/2011/082302(4) 082302-1

 2011 Chinese Optics Letters

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