高氮含量固态MBE生长的GaNAs/InGaAs超晶格太阳能电池研究
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本文报道了一项关于GaNAs/InGaAs超晶格太阳能电池的研究，其特征在于高氮含量的阻挡层采用全固态分子束外延生长技术。这项研究发表在《中国物理快报》第32卷第5期(2015)，编号为057301。研究团队由卢建娅、郑新和（*通讯作者）、王乃明、陈曦、李宝吉、陆书龙和杨辉等来自苏州纳米技术与纳米生物研究所、上海大学材料科学与工程学院以及北京科技大学物理学院的科学家组成。
研究者们成功地展示了近乎1电子伏特(eV)的GaN0.03As0.97/In0.09Ga0.91As短周期超晶格结构，这种设计旨在实现高的结构质量。他们通过优化生长条件，实现了在较低温度下的光致发光(PL)性能。然而，值得注意的是，在室温下并未检测到PL信号，这可能表明较高的开放电路电压(Open-Circuit Voltage, VOC)可能会导致更高的光吸收阈值或可能的缺陷抑制了在常规测量温度下的发光。这项工作对于理解和改进氮化镓基半导体材料的性能，尤其是在太阳能电池中的应用具有重要意义，因为高氮含量可以提高电子迁移率和光吸收特性，从而提升整体光电转换效率。通过全固态分子束外延生长技术，研究人员能够精细控制材料层的厚度和成分，以达到最佳的器件性能。此外，这项研究还可能推动超晶格材料的低温加工工艺，这对于太阳能电池的实际应用来说是一个重要的进展。
CHIN. PHYS. LETT. Vol. 32, No. 5 (2015) 057301
GaNAs/InGaAs Superlattice Solar Cells with High N Content in the Barrier
Grown by All Solid-State Molecular Beam Epitaxy
*
LU Jian-Ya(卢建娅)
1,2
, ZHENG Xin-He(郑新和)
1,3**
, WANG Nai-Ming(王乃明)
1
, CHEN Xi(陈曦)
1
,
LI Bao-Ji(李宝吉)
1
, LU Shu-Long(陆书龙)
1
, YANG Hui(杨辉)
1
1
Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics,
Chinese Academy of Sciences, Suzhou 215123
2
School of Materials Science and Engineering, Shanghai University, Shanghai 200444
3
Department of Physics, College of Mathematics and Physics, University of Science and Technology Beijing,
Beijing 100083
(Received 5 December 2014)
We demonstrate nearly 1 eV GaN
0.03
As
0.97
/In
0.09
Ga
0.91
As strain-compensated short-period superlattice solar
cells by all solid-state molecular beam epitaxy. The optimal period thickness for the superlattice growth is
achieved to realize high structural quality. Meanwhile, the annealing conditions are optimized to realize a photo-
luminescence (PL) at a low temperature. However, no PL signal is detected at room temperature, which could
be reflected by a lower open-circuit voltage of the fabricated devices. The GaN
0.03
As
0.97
/In
0.09
Ga
0.91
As super-
lattice solar cells show a reasonably-high short-circuit current density (𝐽
sc
) of over 10 mA/cm
2
. Furthermore, a
concentration behavior is measured, which shows a linear relationship between 𝐽
sc
and concentration ratios. The
extrapolated ideality factor and saturated current density by the concentration action are in good agreement with
that extracted by the dark case of the p–i–n diodes.
PACS: 73.21.Cd, 88.40.H−, 73.61.Ey DOI: 10.1088/0256-307X/32/5/057301
Multi-junction tandem solar cells are extensive re-
searched, not only for space applications but also for
terrestrial concentrated photovoltaic systems. Theo-
ries indicate that the efficiency of the lattice-matched
InGaP/GaAs/Ge triple-junction solar cell could be en-
hanced up to 45% with the insertion of a 1 eV bandgap
junction between the GaAs and Ge junctions.
[1]
Mean-
while, the short-circuit current density decreases with
the increase of the numbers of cell junctions, which
further reduces the requirement for the material qual-
ity. Therefore, although the GaNInAs material qual-
ity is not good, the quaternary Ga
1−𝑥
In
𝑥
N
𝑦
As
1−𝑦
al-
loys lattice-matched to GaAs or Ge substrates (when
𝑥 ∼ 3𝑦), with an energy band gap of near 1 eV,
are promising materials for ultra-high-efficiency multi-
junction solar cells.
[2]
Recently, high efficiency multi-
junction systems incorporating GaInNAs with an effi-
ciency of 43.5% have been realized.
[3]
However, growth
details and annealing treatment of the GaInNAs-based
active region in the high-efficiency multi-junction so-
lar cells, which involve the GaInNAs subcells, have
not yet been reported.
Currently, the issue limiting the performance of
GaInNAs is related to the poor solubility of nitrogen
in (In)GaAs
[4]
and alloy scattering. These problems
typically result in low carrier mobility, short minority
carrier diffusion lengths and high background impurity
concentrations for GaInNAs.
[5,6]
The situation will be-
come more severe while much N is incorporated into
the (In)GaAsN alloys. To alleviate this issue, the spa-
tial separation of In and N by short-period superlattice
(SPSL) was proposed.
[7]
The superlattice is used to in-
crease the photoabsorption in the energy region below
the absorption edge of the host material, which could
also be fabricated so that the resonance tunneling
takes place along the heterostructure and, at the same
time contribute to the optical transitions and provide
transport of photocarriers.
[8,9]
In Ref. [10], the authors
demonstrated an improved material quality of GaIn-
NAs through SPSLs and 3 times higher PL intensity
than that of a random alloy at room temperature.
[10]
The SPSL design implies a great potential for solar
cell devices by using a thick GaInNAs active region.
However, the cell devices by using the SPSLs were not
reported. Okada et al.
[11]
have improved the photore-
sponse in the below-bandgap energy region of GaAs
for >870 nm by introducing GaAs/GaNAs/InGaAs
multi-quantum wells (MQWs) into the intrinsic re-
gion of GaAs p–i–n solar cells. Wu et al.
[12]
pro-
posed a 0.6 µm GaAsN/InGaAs strain-compensated
MQW cell and achieved a photoresponse as low as
1.2 eV. Courel et al.
[9]
developed a theoretical model to
study the MQWSC and SLSC performances based on
GaAs/GaInNAs. Nevertheless, the absorption band
edge of reported solar cells is still larger than 1 eV.
Additionally, due to many point defects easily intro-
duced into dilute nitrides during the growth, thermal
annealing has been proved to be efficient in improv-
ing the material quality.
[13,14]
Especially, while more
N lies within the alloys, a proper annealing process is
the key to enhance the optical performance.
In this Letter, we successfully develop nearly 1 eV
GaN
0.03
As
0.97
/In
0.09
Ga
0.91
As SPSL solar cells by an
optimization of thermal annealing. The optimal pe-
*
Supported by the National Natural Science Foundation of China under Grant No 61274134, the University of Science and
Technology Beijing Talents Start-up Program under Grant No 06105033, and the International Cooperation Projects of Suzhou
City under Grant No SH201215.
**
Corresponding author. Email: xinhezheng@ustb.edu.cn
© 2015 Chinese Physical Society and IOP Publishing Ltd
057301-1
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