高氮含量固态MBE生长的GaNAs/InGaAs超晶格太阳能电池研究

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本文报道了一项关于GaNAs/InGaAs超晶格太阳能电池的研究，其特征在于高氮含量的阻挡层采用全固态分子束外延生长技术。这项研究发表在《中国物理快报》第32卷第5期(2015)，编号为057301。研究团队由卢建娅、郑新和（*通讯作者）、王乃明、陈曦、李宝吉、陆书龙和杨辉等来自苏州纳米技术与纳米生物研究所、上海大学材料科学与工程学院以及北京科技大学物理学院的科学家组成。研究者们成功地展示了近乎1电子伏特(eV)的GaN0.03As0.97/In0.09Ga0.91As短周期超晶格结构，这种设计旨在实现高的结构质量。他们通过优化生长条件，实现了在较低温度下的光致发光(PL)性能。然而，值得注意的是，在室温下并未检测到PL信号，这可能表明较高的开放电路电压(Open-Circuit Voltage, VOC)可能会导致更高的光吸收阈值或可能的缺陷抑制了在常规测量温度下的发光。这项工作对于理解和改进氮化镓基半导体材料的性能，尤其是在太阳能电池中的应用具有重要意义，因为高氮含量可以提高电子迁移率和光吸收特性，从而提升整体光电转换效率。通过全固态分子束外延生长技术，研究人员能够精细控制材料层的厚度和成分，以达到最佳的器件性能。此外，这项研究还可能推动超晶格材料的低温加工工艺，这对于太阳能电池的实际应用来说是一个重要的进展。

CHIN. PHYS. LETT. Vol. 32, No. 5 (2015) 057301

GaNAs/InGaAs Superlattice Solar Cells with High N Content in the Barrier

Grown by All Solid-State Molecular Beam Epitaxy

LU Jian-Ya(卢建娅)

1,2

, ZHENG Xin-He(郑新和)

1,3**

, WANG Nai-Ming(王乃明)

, CHEN Xi(陈曦)

LI Bao-Ji(李宝吉)

, LU Shu-Long(陆书龙)

, YANG Hui(杨辉)

Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics,

Chinese Academy of Sciences, Suzhou 215123

School of Materials Science and Engineering, Shanghai University, Shanghai 200444

Department of Physics, College of Mathematics and Physics, University of Science and Technology Beijing,

Beijing 100083

(Received 5 December 2014)

We demonstrate nearly 1 eV GaN

0.03

0.97

/In

0.09

0.91

As strain-compensated short-period superlattice solar

cells by all solid-state molecular beam epitaxy. The optimal period thickness for the superlattice growth is

achieved to realize high structural quality. Meanwhile, the annealing conditions are optimized to realize a photo-

luminescence (PL) at a low temperature. However, no PL signal is detected at room temperature, which could

be reﬂected by a lower open-circuit voltage of the fabricated devices. The GaN

0.03

0.97

/In

0.09

0.91

As super-

lattice solar cells show a reasonably-high short-circuit current density (𝐽

) of over 10 mA/cm

. Furthermore, a

concentration behavior is measured, which shows a linear relationship between 𝐽

and concentration ratios. The

extrapolated ideality factor and saturated current density by the concentration action are in good agreement with

that extracted by the dark case of the p–i–n diodes.

PACS: 73.21.Cd, 88.40.H−, 73.61.Ey DOI: 10.1088/0256-307X/32/5/057301

Multi-junction tandem solar cells are extensive re-

searched, not only for space applications but also for

terrestrial concentrated photovoltaic systems. Theo-

ries indicate that the eﬃciency of the lattice-matched

InGaP/GaAs/Ge triple-junction solar cell could be en-

hanced up to 45% with the insertion of a 1 eV bandgap

junction between the GaAs and Ge junctions.

[1]

Mean-

while, the short-circuit current density decreases with

the increase of the numbers of cell junctions, which

further reduces the requirement for the material qual-

ity. Therefore, although the GaNInAs material qual-

ity is not good, the quaternary Ga

1−𝑥

𝑥

𝑦

1−𝑦

al-

loys lattice-matched to GaAs or Ge substrates (when

𝑥 ∼ 3𝑦), with an energy band gap of near 1 eV,

are promising materials for ultra-high-eﬃciency multi-

junction solar cells.

[2]

Recently, high eﬃciency multi-

junction systems incorporating GaInNAs with an eﬃ-

ciency of 43.5% have been realized.

[3]

However, growth

details and annealing treatment of the GaInNAs-based

active region in the high-eﬃciency multi-junction so-

lar cells, which involve the GaInNAs subcells, have

not yet been reported.

Currently, the issue limiting the performance of

GaInNAs is related to the poor solubility of nitrogen

in (In)GaAs

[4]

and alloy scattering. These problems

typically result in low carrier mobility, short minority

carrier diﬀusion lengths and high background impurity

concentrations for GaInNAs.

[5,6]

The situation will be-

come more severe while much N is incorporated into

the (In)GaAsN alloys. To alleviate this issue, the spa-

tial separation of In and N by short-period superlattice

(SPSL) was proposed.

[7]

The superlattice is used to in-

crease the photoabsorption in the energy region below

the absorption edge of the host material, which could

also be fabricated so that the resonance tunneling

takes place along the heterostructure and, at the same

time contribute to the optical transitions and provide

transport of photocarriers.

[8,9]

In Ref. [10], the authors

demonstrated an improved material quality of GaIn-

NAs through SPSLs and 3 times higher PL intensity

than that of a random alloy at room temperature.

[10]

The SPSL design implies a great potential for solar

cell devices by using a thick GaInNAs active region.

However, the cell devices by using the SPSLs were not

reported. Okada et al.

[11]

have improved the photore-

sponse in the below-bandgap energy region of GaAs

for >870 nm by introducing GaAs/GaNAs/InGaAs

multi-quantum wells (MQWs) into the intrinsic re-

gion of GaAs p–i–n solar cells. Wu et al.

[12]

pro-

posed a 0.6 µm GaAsN/InGaAs strain-compensated

MQW cell and achieved a photoresponse as low as

1.2 eV. Courel et al.

[9]

developed a theoretical model to

study the MQWSC and SLSC performances based on

GaAs/GaInNAs. Nevertheless, the absorption band

edge of reported solar cells is still larger than 1 eV.

Additionally, due to many point defects easily intro-

duced into dilute nitrides during the growth, thermal

annealing has been proved to be eﬃcient in improv-

ing the material quality.

[13,14]

Especially, while more

N lies within the alloys, a proper annealing process is

the key to enhance the optical performance.

In this Letter, we successfully develop nearly 1 eV

GaN

0.03

0.97

/In

0.09

0.91

As SPSL solar cells by an

optimization of thermal annealing. The optimal pe-

Supported by the National Natural Science Foundation of China under Grant No 61274134, the University of Science and

Technology Beijing Talents Start-up Program under Grant No 06105033, and the International Cooperation Projects of Suzhou

City under Grant No SH201215.

Corresponding author. Email: xinhezheng@ustb.edu.cn

057301-1

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