"磁敏晶体管原理与应用技术详解"

Magnetic sensitive transistors are a new type of semiconductor magnetic sensitive devices developed after Hall elements and magnetic resistance elements. Magnetic sensitive diodes and magnetic sensitive transistors are a type of PN junction-type new magnetic-electric conversion device. They have the characteristics of large output signal, high sensitivity (hundreds to thousands of times that of Hall elements), low operating current, small size, etc. They are widely used in the detection and control of magnetic fields, speed, and flaw detection. Magnetic sensitive diodes are a type of PIN-type magnetic sensitive device made of silicon or germanium materials. The P-type and N-type electrodes are made of high-resistance materials, with an intrinsic region in between. The surface of the intrinsic region facing the rough side is rough, and a high recombination region (r region) is set to facilitate the recombination and disappearance of electron-hole pairs on the rough surface, while the other side is relatively smooth. Magnetic sensitive transistors, developed on the basis of magnetic-sensitive diodes, are made of Si or Ge materials that have been doped and diffused. These devices have practical applications in various fields such as magnetic field detection, speed measurement, and flaw detection due to their high sensitivity, small size, and low power consumption. Overall, magnetic sensitive transistors are promising devices that offer a wide range of applications due to their unique characteristics and capabilities in converting magnetic fields into electrical signals. With ongoing advancements in technology, magnetic sensitive transistors are expected to play an increasingly important role in various industries and sectors.