ATtiny25-45-1315448：高性能低功耗8位AVR微控制器手册

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本文档是ATMEL公司的ATTINY25-45-1315448芯片手册，它是一款8位高性能低功耗AVR微控制器，基于先进的RISC架构设计。这款小巧的微控制器在单个时钟周期内能执行120种强大的指令，拥有32个8位通用工作寄存器，支持全静态操作，确保了高效能和低能耗。主要特性包括： 1. **可编程非易失性存储器**：该芯片具有2/4/8KB的In-System Programmable (ISP) Flash，用于存储程序代码，其耐用度高达10,000次写入/擦除循环。对于数据存储，Atmel ATtiny25/45/85型号还配备了128/256/512B的ISP EEPROM，具有更高的耐用度，可以承受100,000次写入/擦除循环。 2. **内置内存**：内部集成了128/256/512B的SRAM，方便运行时的数据存储和处理。 3. **安全功能**：编程锁机制确保了自编程Flash程序和EEPROM数据的安全，防止未经授权的修改。 4. **丰富的外设**： - **定时器/计数器**：包含一个带预分频器的8位定时器/计数器和一个高速独立预分频器的8位定时器/计数器，支持两个PWM通道。 - **高级PWM功能**：具有两个独立输出比较器的高频率PWM输出，以及可编程死区时间。 - **串行接口**：带有起始条件检测的通用串行接口，便于通信应用。 - **模拟输入**：集成10位ADC，支持单端或差分输入，具有可编程增益选项（1x或20x）。 5. **看门狗定时器**：内置看门狗定时器，使用独立的片上振荡器，确保系统稳定性。 6. **其他特性**：还包括一个独立的振荡器，以及其他可能的接口选项，如GPIO等。 ATTINY25-45-1315448是一款适用于各种低功耗、小型化应用的理想选择，尤其适合嵌入式系统开发，提供了足够的性能和灵活性，同时注重安全性和易于编程。学习和使用这款芯片时，开发者可以参考这份手册来了解其硬件特性、编程接口和相关指令集，以便更好地将其集成到自己的项目中。

ATtiny25/45/85 Automotive [DATASHEET]

7598J–AVR–12/14

4.3.8 Erase

To erase a byte, the address must be written to EEAR. If the EEPMn bits are 0b01, writing the EEPE (within four cycles after

EEMPE is written) will trigger the erase operation only (programming time is given in Table 19-1 on page 122). The EEPE bit

remains set until the erase operation completes. While the device is busy programming, it is not possible to do any other

EEPROM operations.

4.3.9 Write

To write a location, the user must write the address into EEAR and the data into EEDR. If the EEPMn bits are 0b10, writing

the EEPE (within four cycles after EEMPE is written) will trigger the write operation only (programming time is given in

Table 19-1 on page 122). The EEPE bit remains set until the write operation completes. If the location to be written has not

been erased before write, the data that is stored must be considered as lost. While the device is busy with programming, it is

not possible to do any other EEPROM operations.

The calibrated oscillator is used to time the EEPROM accesses. Make sure the oscillator frequency is within the

requirements described in Section 5.6.1 “Oscillator Calibration Register – OSCCAL” on page 24.

The following code examples show one assembly and one C function for erase, write, or atomic write of the EEPROM. The

examples assume that interrupts are controlled (e.g., by disabling interrupts globally) so that no interrupts will occur during

execution of these functions

Assembly Code Example

EEPROM_write:

; Wait for completion of previous write

sbic EECR,EEPE

rjmp EEPROM_write

; Set Programming mode

ldi r16, (0<<EEPM1)|(0<<EEPM0)

out EECR, r16

; Set up address (r17) in address register

out EEARL, r17

; Write data (r16) to data register

out EEDR,r16

; Write logical one to EEMWE

sbi EECR,EEMWE

; Start eeprom write by setting EEWE

sbi EECR,EEWE

ret

C Code Example

void EEPROM_write(unsigned char ucAddress, unsigned char ucData)

{

/* Wait for completion of previous write */

while(EECR & (1<<EEPE))

;

/* Set Programming mode */

EECR = (0<<EEPM1)|(0>>EEPM0)

/* Set up address and data registers */

EEARL = ucAddress;

EEDR = ucData;

/* Write logical one to EEMWE */

EECR |= (1<<EEMWE);

/* Start eeprom write by setting EEWE */

EECR |= (1<<EEWE);

}

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