三星DDR3芯片K4B2G1646Q-BP数据手册下载

需积分: 10 2 浏览量更新于2024-07-21 收藏 1.26MB PDF 举报

"K4B2G1646Q-BP是一款三星DDR3内存芯片的数据手册，版本为Rev.1.0，发布日期为2013年8月。该文档是仅供参考的，并强调了所有信息都是基于"原样提供"（AS IS）原则，不附带任何形式的保证，包括但不限于质保。三星电子保留随时更改产品、信息和规格的权利，而无需提前通知。在该文档中，重要的注意事项包括： 1. 知识产权声明：三星电子拥有所有知识产权，包括专利、版权、商标等，用户在使用过程中并未获得这些权利的许可。 2. 安全与适用性限制：此产品不适合用于生命支持系统、医疗设备、关键护理或可能导致人身伤害的应用，也禁止用于军事或国防用途，以及可能有特殊条款或规定的地方。 3. 获取更多信息：如需了解产品的最新更新或更多信息，应联系三星最近的办事处。 4. 版权声明：文档中的所有品牌名、商标和注册商标均为各自所有者的财产。该数据手册详细列出了K4B2G1646Q-BP的具体技术规格，包括但不限于频率范围、容量、电压需求、接口标准、电气特性、时序参数以及可能的错误检测和校正功能。此外，它还包含了关于制造过程、封装类型、操作温度范围以及存储器的电气行为和性能指标的详细描述。对于任何希望使用这款三星DDR3内存芯片的工程师或设计师来说，这份数据手册是至关重要的参考资料，提供了必要的信息来确保正确设计和应用，同时确保符合安全和合规要求。由于其专业性和特定性，找到并理解这份资料对于实现高质量的电子产品设计至关重要。"

- 11 -

datasheet DDR3 SDRAM

Rev. 1.0

K4B2G1646Q

Industrial & Low

8. AC & DC Input Measurement Levels

8.1 AC & DC Logic input levels for single-ended signals

[ Table 7 ] Single-ended AC & DC input levels for Command and Address

NOTE :

1. For input only pins except

RESET, V

REF

= V

REFCA

(DC)

2. See ’Overshoot/Undershoot Specification’ on page 20.

3. The AC peak noise on V

REF

may not allow V

REF

to deviate from V

REF

(DC) by more than ± 1% V

(for reference : approx. ± 15mV)

4. For reference : approx. V

/2 ± 15mV

5. V

(dc) is used as a simplified symbol for V

IH.CA

(DC100)

6. V

(dc) is used as a simplified symbol for V

IL.CA

(DC100)

7. VIH(ac) is used as a simplified symbol for VIH.CA(AC175), VIH.CA(AC150), VIH.CA(AC135), and VIH.CA(AC125); VIH.CA(AC175) value is used when Vref + 0.175V is

referenced, VIH.CA(AC150) value is used when Vref + 0.150V is referenced, VIH.CA(AC135) value is used when Vref + 0.135V is referenced, and VIH.CA(AC125) value is

used when Vref + 0.125V is referenced.

8. VIL(ac) is used as a simplified symbol for VIL.CA(AC175), VIL.CA(AC150), VIL.CA(AC135) and VIL.CA(AC125); VIL.CA(AC175) value is used when Vref - 0.175V is

referenced, VIL.CA(AC150) value is used when Vref - 0.150V is referenced, VIL.CA(AC135) value is used when Vref - 0.135V is referenced, and VIL.CA(AC125) value is used

when Vref - 0.125V is referenced.

9. VrefCA(DC) is measured relative to VDD at the same point in time on the same device

Symbol Parameter

DDR3-800/1066/1333/1600

Unit NOTE

Min. Max.

IH.CA

(DC100)

DC input logic high

REF

+ 100 V

mV 1,5

IL.CA

(DC100)

DC input logic low

REF

- 100

mV 1,6

IH.CA

(AC175)

AC input logic high

REF

+ 175

Note 2 mV 1,2,7

IL.CA

(AC175)

AC input logic low Note 2

REF

- 175

mV 1,2,8

IH.CA

(AC150)

AC input logic high

REF

+150

Note 2 mV 1,2,7

IL.CA

(AC150)

AC input logic low Note 2

REF

-150

mV 1,2,8

IH.CA

(AC135)

AC input logic high - - mV 1,2,7

IL.CA

(AC135)

AC input logic low - - mV 1,2,8

IH.CA

(AC125)

AC input logic high - - mV 1,2,7

IL.CA

(AC125)

AC input logic low - - mV 1,2,8

REFCA

(DC)

Reference Voltage for ADD,

CMD inputs

0.49*V

0.51*V

V 3,4,9

- 12 -

datasheet DDR3 SDRAM

Rev. 1.0

K4B2G1646Q

Industrial & Low

[ Table 8 ] Single-ended AC & DC input levels for DQ and DM

NOTE :

1. For input only pins except

RESET, V

REF

= V

REFDQ

(DC)

2. See ’Overshoot/Undershoot Specification’ on page 20.

3. The AC peak noise on V

REF

may not allow V

REF

to deviate from V

REF

(DC) by more than ± 1% V

(for reference : approx. ± 15mV)

4. For reference : approx. V

/2 ± 15mV

5. V

(dc) is used as a simplified symbol for V

IH.DQ

(DC100)

6. V

(dc) is used as a simplified symbol for V

IL.DQ

(DC100)

7. VIH(ac) is used as a simplified symbol for VIH.DQ(AC175), VIH.DQ(AC150), and VIH.DQ(AC135); VIH.DQ(AC175) value is used when Vref + 0.175V is referenced,

VIH.DQ(AC150) value is used when Vref + 0.150V is referenced, and VIH.DQ(AC135) value is used when Vref + 0.135V is referenced.

8.VIL(ac) is used as a simplified symbol for VIL.DQ(AC175), VIL.DQ(AC150), and VIL.DQ(AC135); VIL.DQ(AC175) value is used when Vref - 0.175V is referenced,

VIL.DQ(AC150) value is used when Vref -0.150V is referenced, and VIL.DQ(AC135) value is used when Vref - 0.135V is referenced.

9. VrefCA(DC) is measured relative to VDD at the same point in time on the same device

10. Optional in DDR3 SDRAM for DDR3-800/1066/1333/1600: Users should refer to the DRAM supplier data sheetand/or the DIMM SPDto determine if DDR3 SDRAM devices

support this option.

Symbol Parameter

DDR3-800/1066 DDR3-1333/1600

Unit NOTE

Min. Max. Min. Max.

IH.DQ

(DC100)

DC input logic high

REF

+ 100 V

REF

+ 100 V

mV 1,5

IL.DQ

(DC100)

DC input logic low

REF

- 100 V

REF

- 100

mV 1,6

IH.DQ

(AC175)

AC input logic high

REF

+ 175

NOTE 2 - - mV 1,2,7

IL.DQ

(AC175)

AC input logic low NOTE 2

REF

- 175

- - mV 1,2,8

IH.DQ

(AC150)

AC input logic high

REF

+ 150

NOTE 2

REF

+ 150

NOTE 2 mV 1,2,7

IL.DQ

(AC150)

AC input logic low NOTE 2

REF

- 150

NOTE 2

REF

- 150

mV 1,2,8

IH.DQ

(AC135)

AC input logic high

REF

+ 135

NOTE 2

REF

+ 135

NOTE 2 mV 1,2,7,10

IL.DQ

(AC135)

AC input logic low NOTE 2

REF

- 135

NOTE 2

REF

- 135

mV 1,2,8,10

REF

(DC)

Reference Voltage for DQ,

DM inputs

0.49*V

0.51*V

0.49*V

0.51*V

V 3,4,9

剩余60页未读，继续阅读

quangege2010

粉丝: 0
资源: 9

三星DDR3芯片K4B2G1646Q-BP数据手册下载

K4B4G1646D-BYMA datasheetshu数据手册

k4s561632N

K4B2G1646Q_128MX16.PDF

Mem_DDR3_K4B2G1646Q-BCK0三星

K4B2G1646F-BYMA.PDF

K4B4G1646Q-HYK0

K4B4G1646D-BYMA

Samsung-K4B4G1646E-BCMA.pdf

K4B4G1646D-BC-I_Rev103-0.pdf

K4B4G1646D-BCK0 datasheet 规格书

最新资源