CC2530芯片技术手册：2.4GHz ZigBee应用系统级解决方案

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"CC2530是Texas Instruments（TI）公司推出的一款针对2.4GHz IEEE 802.15.4和ZigBee应用的真正的系统级芯片（SoC）解决方案。该芯片集成了许多功能，包括精确的数字RSSI/LQI支持、电池监测和温度传感器、符合IEEE 802.15.4标准的2.4GHz RF收发器、12位ADC以及AES安全协处理器。此外，它还具备良好的接收灵敏度和干扰抵抗能力，以及对多种串行协议的支持。" CC2530芯片详细说明： 1. **系统级芯片集成**：CC2530将微控制器和射频（RF）收发器集成在一个芯片上，提供了一种高效、紧凑的解决方案，适用于无线传感器网络和ZigBee应用。 2. **RF性能**：这款芯片具有优秀的RF性能，如准确的数字RSSI（接收信号强度指示）和LQI（链路质量指示）支持，确保在无线通信中的可靠性和稳定性。 3. **传感器支持**：内置的电池监控和温度传感器提供了实时的电源管理和环境监控功能，这对于物联网设备尤其重要。 4. **RF特性**：CC2530支持2.4GHz IEEE 802.15.4标准，这意味着它可以用于ZigBee网络。它有12位ADC，可以配置分辨率，确保了数据采集的精度。 5. **接收灵敏度与抗干扰能力**：其卓越的接收灵敏度和干扰抵抗能力，使得设备在复杂电磁环境下仍能保持稳定通信。 6. **串行接口**：两个强大的USART（通用同步异步收发传输器）支持多种串行协议，如SPI、I2C等，增强了设备的互连性。 7. **GPIO**：CC2530提供21个通用输入/输出引脚，其中19个支持4mA电流驱动，2个支持20mA电流驱动，满足不同外设需求。 8. **电源管理**：芯片支持可编程输出功率高达4.5dBm，适合低功耗应用，并且只需要一个晶体即可满足网状网络系统的时钟需求。 9. **封装形式**：采用6mm x 6mm QFN40封装，减小了板级空间需求，利于小型化设计。 10. **开发工具**：TI提供了CC2530开发套件，包括CC2530 ZigBee Development Kit和CC2530 RemoTI Development Kit，便于开发者进行兼容性测试和产品开发。SmartRF软件则为RF参数调整和优化提供了便利。 11. **法规遵从**：CC2530适用于全球范围内的无线电频率规定，包括ETSI EN 300 328和EN 300 440（欧洲）、FCC CFR 47 Part 15（美国）以及ARIB STD-T-66（日本），确保产品在全球市场上的合法合规。 CC2530是一款综合了强大处理能力、优秀无线通信特性和低功耗设计的SoC，是开发2.4GHz无线传感器网络和ZigBee应用的理想选择。结合TI提供的开发工具和软件支持，可以简化设计流程，加速产品的上市时间。

RF TRANSMIT SECTION

CC2530F32 , CC2530F64 , CC2530F128 , CC2530F256

SWRS081A – APRIL 2009 – REVISED APRIL 2009 ..........................................................................................................................................................

www.ti.com

RF RECEIVE SECTION (continued)

Measured on Texas Instruments CC2530 EM reference design with T

= 25 ° C, VDD = 3 V, and f

= 2440 MHz, unless

otherwise noted.

Boldface limits apply over the entire operating range, T

= – 40 ° C to 125 ° C, VDD = 2 V to 3.6 V, and f

= 2394 MHz to

2507 MHz.

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

Spurious emission. Only largest spurious

emission stated within each band.

Conducted measurement with a 50- Ω single-ended load.

Suitable for systems targeting compliance with EN 300 328, dBm

30 MHz – 1000 MHz <

EN 300 440, FCC CFR47 Part 15 and ARIB STD-T-66.

– 80

1 GHz – 12.75 GHz

– 57

Frequency error tolerance

(1)

[1] requires minimum 80 ppm ± 150 ppm

Symbol rate error tolerance

(2)

[1] requires minimum 80 ppm ± 1000 ppm

(1) Difference between center frequency of the received RF signal and local oscillator frequency.

(2) Difference between incoming symbol rate and the internally generated symbol rate

Measured on Texas Instruments CC2530 EM reference design with T

= 25 ° C, VDD = 3 V and f

= 2440 MHz, unless

otherwise noted.

Boldface limits apply over the entire operating range, T

= – 40 ° C to 125 ° C, VDD = 2 V to 3.6 V and f

= 2394 MHz to 2507

MHz.

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

Delivered to a single-ended 50- Ω load through a balun using

0 4.5 8

maximum-recommended output-power setting

Nominal output power dBm

– 8 10

[1] requires minimum – 3 dBm

Programmable output power 32 dB

range

Spurious emissions Max recommended output power setting

(1)

Measured conducted 25 MHz – 1000 MHz (outside restricted bands) – 60

according to stated

25 MHz – 2400 MHz (within FCC restricted bands) – 60

regulations. Only largest

25 MHz – 1000 MHz (within ETSI restricted bands) – 60

spurious emission stated

1800 – 1900 MHz (ETSI restricted band) – 57

within each band.

5150 – 5300 MHz (ETSI restricted band)

– 55

dBm

At 2 × f

and 3 × f

(FCC restricted band)

– 42

At 2 × f

and 3 × f

(ETSI EN 300-440 and EN 300-328)

(2)

– 31

1 GHz – 12.75 GHz (outside restricted bands)

– 53

At 2483.5 MHz and above (FCC restricted band)

= 2480 MHz

(3)

– 42

Measured as defined by [1] using maximum-recommended

output-power setting

Error vector magnitude (EVM) 2%

[1] requires maximum 35%.

Differential impedance as seen from the RF port (RF_P and RF_N)

Optimum load impedance 69 + j29 Ω

towards the antenna

(1) Texas Instruments CC2530 EM reference design is suitable for systems targeting compliance with EN 300 328, EN 300 440, FCC

CFR47 Part 15 and ARIB STD-T-66.

(2) Margins for passing conducted requirements at the third harmonic can be improved by using a simple band-pass filter connected

between matching network and RF connector (1.8 pF in parallel with 1.6 nH); this filter must be connected to a good RF ground.

(3) Margins for passing FCC requirements at 2483.5 MHz and above when transmitting at 2480 MHz can be improved by using a lower

output-power setting or having less than 100% duty cycle.

Product Folder Link(s): CC2530F32 CC2530F64 CC2530F128 CC2530F256

32-MHz CRYSTAL OSCILLATOR

32.768-kHz CRYSTAL OSCILLATOR

32-kHz RC OSCILLATOR

CC2530F32 , CC2530F64 , CC2530F128 , CC2530F256

www.ti.com

.......................................................................................................................................................... SWRS081A – APRIL 2009 – REVISED APRIL 2009

Measured on Texas Instruments CC2530 EM reference design with T

= 25 ° C and VDD = 3 V, unless otherwise noted.

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

Crystal frequency 32 MHz

Crystal frequency accuracy

– 40 40 ppm

requirement

(1)

ESR Equivalent series resistance 6 60 Ω

Crystal shunt capacitance 1 7 pF

Crystal load capacitance 10 16 pF

Start-up time 0.3 ms

The crystal oscillator must be in power down for a

guard time before it is used again. This

Power-down guard time requirement is valid for all modes of operation. The 3 ms

need for power-down guard time can vary with

crystal type and load.

(1) Including aging and temperature dependency, as specified by [1]

Measured on Texas Instruments CC2530 EM reference design with T

= 25 ° C and VDD = 3 V, unless otherwise noted.

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

Crystal frequency 32.768 kHz

Crystal frequency accuracy

– 40 40 ppm

requirement

(1)

ESR Equivalent series resistance 40 130 Ω

Crystal shunt capacitance 0.9 2 pF

Crystal load capacitance 12 16 pF

Start-up time 0.4 s

(1) Including aging and temperature dependency, as specified by [1]

Measured on Texas Instruments CC2530 EM reference design with T

= 25 ° C and VDD = 3 V, unless otherwise noted.

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

Calibrated frequency

(1)

32.753 kHz

Frequency accuracy after calibration ± 0.2%

Temperature coefficient

(2)

0.4 %/ ° C

Supply-voltage coefficient

(3)

3 %/V

Calibration time

(4)

2 ms

(1) The calibrated 32-kHz RC oscillator frequency is the 32-MHz XTAL frequency divided by 977.

(2) Frequency drift when temperature changes after calibration

(3) Frequency drift when supply voltage changes after calibration

(4) When the 32-kHz RC oscillator is enabled, it is calibrated when a switch from the 16-MHz RC oscillator to the 32-MHz crystal oscillator

is performed while SLEEPCMD.OSC32K_CALDIS is 0.

Product Folder Link(s): CC2530F32 CC2530F64 CC2530F128 CC2530F256

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