Cam Nguyen的《射频集成电路工程》——2015年版

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"射频集成电路工程，Cam Nguyen 2015年新书" "射频集成电路工程" 是一本由Cam Nguyen在2015年出版的专业书籍，专注于讲解射频集成电路（RFIC）的设计和工程实践。这本书由John Wiley & Sons, Inc.发行，同时也在加拿大同步出版。版权信息强调了对内容的保护，规定未经许可，任何部分不得复制、存储或以任何形式传播。射频集成电路是电子工程领域中的一个关键分支，主要涉及设计和制造用于处理无线通信信号的集成电路。RFICs在移动通信、卫星通信、雷达系统以及物联网设备等众多领域都有广泛应用。它们能够处理从几兆赫兹到几十吉赫兹的射频信号，是现代无线技术的核心。本书可能涵盖了以下关键知识点： 1. **射频基础**：包括射频信号的基本特性，如频率、功率、相位和调制方式，以及射频信号与微波信号的区别。 2. **电路理论**：介绍射频电路设计的基础，如LC谐振器、混频器、放大器和滤波器的工作原理。 3. **半导体器件**：深入讲解用于射频集成电路的半导体材料，如硅、GaAs、GaN等，以及晶体管（如MOSFET和BJT）的特性和应用。 4. **射频集成电路设计**：涵盖如何设计射频前端、功率放大器、低噪声放大器、混频器、振荡器和开关等基本组件。 5. **模拟和数字集成**：讨论在单芯片上实现模拟和数字功能的挑战及解决方案，包括模拟-数字接口设计。 6. **射频系统的布局与封装**：讲述如何优化RFIC布局以减少寄生效应，以及封装技术对性能的影响。 7. **射频测试与表征**：介绍射频集成电路的测试方法，包括参数测量和系统级验证。 8. **射频电路仿真**：讲解使用SPICE和其他射频仿真工具进行电路设计和验证的方法。 9. **射频系统设计**：可能涉及天线、射频子系统和整个无线通信系统的集成。 10. **射频功耗与效率**：讨论如何在保持性能的同时降低功耗，这对于便携式和远程设备至关重要。这本书对于想要深入理解射频集成电路设计的工程师、学生和研究人员来说是一份宝贵的资源，它不仅提供了理论知识，还可能包含实际案例和设计实例，帮助读者将理论应用于实践。同时，书中可能还包括了关于最新技术和未来趋势的讨论，以反映该领域的快速发展。

CONTENTS xv

References 784

Problems 784

16 SYSTEMS 788

16.1 Fundamentals of Systems 788

16.1.1 Friis Transmission Equation 788

16.1.2 System Equation 790

16.1.3 Signal-to-Noise Ratio of System 791

16.1.4 Receiver Sensitivity 793

16.1.5 System Performance Factor 794

16.1.6 Power 796

16.1.7 Angle and Range Resolution 797

16.1.8 Range Accuracy 800

16.2 System Type 801

16.2.1 Pulse System 801

16.2.2 FMCW System 803

16.2.3 Receiver Architectures 808

References 826

Problems 826

APPENDIX: RFIC DESIGN EXAMPLE: MIXER

830

A1.1 Circuit Design Specications and General Design Information 830

A1.2 Mixer Design 830

A1.2.1 Single-Ended to Differential Input Active Balun 832

A1.2.2 Double-Balanced Gilbert Cell 832

A1.2.3 Differential to Single-Ended Output Active Balun 834

A1.2.4 Band-Pass Filter 834

A1.3 Mixer Optimization and Layout 835

A1.4 Simulation Results 836

A1.4.1 Stability 836

A1.4.2 Return Loss 836

A1.4.3 Conversion Gain 836

A1.4.4 Noise Figure 837

A1.4.5 Other Mixer Performance 837

A1.5 Measured Results 838

References 840

INDEX

841

PREFACE

Radio Frequency Integrated Circuits (RFICs) implemented using silicon-based technologies

such as complementary metal–oxide–semiconductor (CMOS) and bipolar and complementary metal–

oxide–semiconductor (BiCMOS) offer competitive performance with much lower cost and better integra-

tion capability than their non-silicon based counterparts. RFIC has become one of the most exciting areas

in the radio frequency (RF) domain with contributions and impacts far reaching into the millimeter-wave

range and advancing into the sub-millimeter-wave regime. Studies and research for RFIC, particularly those

extending into the millimeter-wave region and beyond, across the World have exploded in the past decade

and are indeed increasing rapidly.

Several years ago, when my research interests shifted from the then more well-known microwave-

integrated circuits and systems to RFICs, I was looking for possible books that address RFIC design, espe-

cially from the microwave design point of view, which I consider as absolutely essential for RF operation.

As a result, the long journal for this book began and its birth, long overdue, is just now matured.

As RF is moving into very high frequencies now, reaching THz, RF (as it is practiced now) is not dif-

ferent from microwave. RF at present implies frequencies from a few KHz up to hundreds of GHz (not a

few GHz as considered before). Therefore, knowledge in electromagnetics (EM) and microwave engineer-

ing, together with passive and active RFICs, RFIC analysis and design techniques, and RF systems, is vital

for RFIC engineers. Without EM and microwave engineering foundation, RFIC engineers would lack the

essential background needed for designing RFICs at high frequencies. The primary objective of the book

is to present the theory, analysis, and design of passive and active RFICs, including those at high frequen-

cies beyond those in the traditional RF spectrum, aiming toward providing essential knowledge in RFIC

design to graduate students and engineers. The materials in this book are self-contained and presented in

such details that allow readers with only undergraduate electrical engineering knowledge in EM, RF and

circuits to understand and design RFICs. The book includes problems at the end of each chapter, allowing

readers to reinforce their knowledge and practice their understanding. Some of these problems are rela-

tively long and difcult, and may thus be more suitable for class projects. The book can serve not only as a

textbook for graduate students and senior undergraduate students (to some extent), but also as a reference

book for practicing RFIC and microwave engineers. It is written based partly on the materials of some grad-

uate courses on active RFICs and microwave circuits offered at the Texas A&M University and partly on

the RFIC research conducted at the University. The majority of the book can be covered in two graduate

semester courses (or two undergraduate courses with reduced load): one for passive RFICs and another for

active RFICs.

I sincerely appreciate some of my former students (Drs. M. Miao, Y. Jin, X. Guan, M. Chirala, R. Xu, and

S. Lee) for their enthusiasm in venturing into the RFIC area with me and for their contributions, and my

xvii

CHAPTER 1

INTRODUCTION

Wireless systems, including communication, networking, and sensing systems, play a critical role in our

information-age society in many areas, from public service and safety, consumer, industry, sports, gaming,

and entertainment, asset and inventory management, medicine, banking to government and military oper-

ations. The key to enabling effective wireless communications, sensing and networking is radio-frequency

(RF) integrated circuits (ICs).

Radio-frequency integrated circuits (RFICs) typically refer to RF monolithic ICs fabricated on silicon

(Si) substrates using complementary metal oxide semiconductor (CMOS) or BiCMOS technology. From a

general perspective, however, RFICs are not and should not be limited to only Si-based CMOS and BiCMOS

circuits; others like microwave monolithic integrated circuits (MMICs) using III–V semiconductors such as

GaAs MMICs can also be classied as RFICs. Nevertheless, in this book, to emphasize the main objective

of the book and to distinguish Si-based RFICs from other non-Si based RFICs, we will use the term RFIC

to indicate Si-based CMOS/BiCMOS RFIC. The readers should, however, keep in mind that the presented

materials are not limited to Si-based RFICs; they are also applicable to non-Si based RFICs such as GaAs

MMICs.

The frequencies used to indicate the RF range, in general, and for RFICs, in particular, are not strictly

dened in practice. To some extent, particularly in the past, the frequencies in the RF range are known as

a few kilohertz to a few gigahertz and, hence, RF is clearly distinct from microwave. Since the frequencies

for radio waves are normally known as between 3 KHz and 300 GHz, to a broader extent, the frequencies

in the RF range can be considered from 3 KHz to 300 GHz. As the name RF implies, however, these

frequencies should not be limited to below 300 GHz. In this book, we will consider all the RFs in the

electromagnetic (EM) spectrum up to terahertz (THz) as RF—in other words, we view the RF range as

including all frequencies from 3 KHz to microwave, millimeter-wave and sub-millimeter-wave frequencies.

Therefore, RF, as it is practiced or should be practiced now, is not different from microwave, millimeter-wave

and sub-millimeter-wave frequencies. The boundary between RF and microwave, millimeter-wave and

sub-millimeter-wave indeed no longer exists or should not exist. As the technologies for RFICs advance

toward the terahertz region of the RF spectrum, it is expected that RFICs will nd many useful applications in

both the commercial and the defense sectors at terahertz—for instance, medical imaging or personal-health

Radio-Frequency Integrated-Circuit Engineering, First Edition. Cam Nguyen.

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