柔性基板上的全透明碳纳米管薄膜晶体管制作工艺

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"在柔性基板上进行完全透明的溶液处理的碳纳米管薄膜晶体管(CNT-TFTs)是一种创新的技术，旨在实现灵活且透明的电子设备。通过使用95%半导体富集的碳纳米管作为通道材料，并采用透明的氧化铟锡作为栅极、源极和漏极电极，成功制造出具有高开/关电流比（2.68×10^6）、低阈值电压（0.38V）、陡峭的亚阈值摆动（0.28V/dec）、良好器件迁移率（2.95cm^2/vs）以及高透明度（91.1%）的CNT-TFTs。整个溶液处理过程无需高温和复杂工艺，符合未来透明和柔性电子产品的制造需求。 I. 引言柔性与光学透明电子技术是下一代光电设备的关键领域，近年来引起了大量研究关注。由于其在众多领域如柔性电路、柔性显示器和可贴合RFID标签等潜在的商业应用价值，该技术具有巨大的市场潜力。传统的硅基电子设备虽然性能优异，但其刚性限制了在新兴领域的应用。因此，寻找新的材料和工艺来实现既柔软又透明的电子元器件变得至关重要。 II. 碳纳米管薄膜晶体管的优势碳纳米管（CNTs）因其独特的物理和化学性质，成为柔性电子领域的重要候选材料。它们的高导电性、良好的机械柔韧性和出色的光学透明性使得在透明电极和柔性晶体管中有着广泛的应用。通过溶液处理方法，可以将碳纳米管均匀分散在基材上，形成连续的薄膜，这种工艺不仅成本低，而且易于大规模生产。 III. 设备结构与性能本研究中，95%半导体富集的碳纳米管用于构建TFT的沟道，这有助于提高器件的开关性能和稳定性。氧化铟锡（ITO）作为透明电极，不仅保持了设备的透明特性，还提供了良好的电荷注入能力。低阈值电压表明设备能够在较低的电源下工作，而陡峭的亚阈值摆动则意味着对输入信号的变化非常敏感，有利于逻辑操作。高迁移率意味着电子或空穴在纳米管沟道中的快速传输，这对于高速电子设备至关重要。 IV. 制造工艺与挑战溶液处理的CNT-TFTs制造过程中，避免了高温退火和复杂的微加工步骤，降低了生产成本并提高了工艺兼容性。然而，如何确保碳纳米管的纯度、均匀分布以及与基材的稳定结合，以及在长期使用和弯曲条件下的器件稳定性，仍然是该技术面临的主要挑战。 V. 应用前景透明和柔性电子产品有望在可穿戴技术、智能包装、生物医疗传感器以及太阳能电池等领域发挥重要作用。CNT-TFTs的这些特性使得它们成为这些应用的理想选择。未来的研究将集中在优化器件性能、提高制造效率以及探索新的功能集成方案。 VI. 结论本研究展示了一种简单且低成本的方法，用于在柔性基板上制造完全透明的碳纳米管薄膜晶体管，展示了其在透明和柔性电子领域的巨大潜力。尽管仍存在一些挑战，但这项技术的进步将推动柔性电子技术的发展，为未来的创新应用打开新的可能。"



Abstract—Fully transparent solution-processed carbon

nanotube thin film transistors (CNT-TFTs) on flexible substrate

are proposed and fabricated by a facile and low-cost process. By

using 95%-semiconducting enriched carbon nanotubes as

channel and transparent indium tin oxide as gate, source and

drain electrodes, CNT-TFTs with a high on/off current ratio of

2.6810

, a low threshold voltage of 0.38 V, a steep subthreshold

swing of 0.28 V/dec, a good device mobility of 2.95 cm

/vs as well

as a high transparency of 91.1% has been achieved. In addition,

the whole fabrication of solution-processed CNT-TFTs involves

no high temperature and complicated processing, which satisfies

the manufacturing requirements for future transparent and

flexible electronics.

I. INTRODUCTION

Flexible and optically transparent electronics, as an

emerging technology for the next-generation optoelectronic

devices, has attracted numerous research efforts in recent

years due to its great potential to make significant commercial

impact in a wide variety of areas [1, 2], such as flexible circuits

[3], flexible displays [4],

and conformable RFID tags [5, 6].

High optical transparency, good electrical performance as

well as low temperature processing are all required for flexible

and transparent electronics.[7] Carbon nanotubes are ideal

candidates for flexible and transparent electronics compared to

other materials, such as amorphous silicon[8, 9],

polysilicon[10, 11], and organic materials[12, 13] due to their

advantages on mobility, transparency, flexibility, and

low-temperature processing. Carbon nanotube thin-film

transistors (CNT-TFTs) could overcome the limitations of the

conventional polycrystalline silicon and amorphous silicon

thin film transistors, such as low mobility, non-transparency,

or high temperature processing. CNT-TFTs are normally

fabricated by directly transferring carbon nanotubes (CNTs)

grown by chemical vapor deposition (CVD) to a target

substrate. This method is attractive for researchers because it

can control the density and alignment of CNTs accurately.[14]

Research supported by Shenzhen competitive research grants

KQCX20130628093909155 and JCYJ20140419131807791, and National

Nature Science Foundation of China 61504004. This work was conducted in

Shenzhen TFT and Advanced Display Lab.

Yanyan Deng is with School of Electronic and Computer Engineering,

Peking University, Shenzhen, 518055, China (e-mail: yanyandeng@

sz.pku.edu.cn).

Mansun Chan is with Department of Electronic and Computer

Engineering, Hong Kong University of Science and Technology, Hong Kong

(e-mail: mchan@ust.hk).

Min Zhang is with School of Electronic and Computer Engineering,

Peking University, Shenzhen, 518055, China (corresponding author, phone:

0755-26032482; fax: 0755-26032015; e-mail: zhangm@ece.pku.edu.cn).

However, in the direct transfer, the original ~30% impurity of

metallic nanotubes from CVD method will lead to low on/off

current ratio and the transfer process is complicated. On the

other hand, solution-processed CNT-TFTs by using enriched

semiconducting carbon nanotubes solution to form the CNT

channel are more suitable for flexible and transparent

electronics applications due to their controllability on

semiconducting nanotube percentages, high on/off current

ratio, low-temperature processing, and potential for

large-scale and low-cost fabrication.

In this paper, fully transparent transistors using

solution-processed carbon nanotube network as channel and

transparent indium tin oxide (ITO) as electrodes have been

realized on a flexible polyethylene naphthalate (PEN)

substrate. The resulting CNT-TFTs own high electrical

performance and high transparency simultaneously. In

addition, the fabrication of the solution-processed CNT-TFTs

involves no high temperature and the process is facile, which

match the manufacturing requirements for future transparent

and flexible electronics.

II. DEVICE FABRICATION

The schematic diagram of the fabricated fully transparent

CNT-TFT on PEN substrate is shown in Figure 1 (a). The

thickness of the PEN substrate is 125 μm. The CNT-TFTs

employs CNT network with an enriched semiconducting

purity of 95% as active layer, ITO as gate/source/drain

electrode, and SiO

as gate dielectric.

Before the device fabrication, the PEN substrate was

preheated in a hot oven under 180

C for 30 min to avoid the

bending of the substrate. After that, the bottom 100 nm ITO

was sputtered on the whole PEN substrate, working as a

common back gate. Then, a 200 nm SiO

layer was deposited

onto the wafer by PECVD under a low temperature of 150

Prior to the formation of CNT network channels, the substrate

(SiO

/ITO/PEN) was functionalized with

aminopropyltriethoxysilane (APTES) by immersing the wafer

into APTES/DI water solution for 10 min so that a higher CNT

density can be obtained in the following step. [15] Then, 0.6

mL CNT solution with a semiconducting purity of 95%

(NanoIntegris Inc.) was dropped on the substrate at a spinning

speed of 3000 rpm. The concentration of CNT solution is 0.1

mg/mL. Following that, a 100 nm ITO layer was deposited by

sputtering, and then patterned by lift-off process to form S/D

electrodes. Finally, the CNT channel regions were defined by

photolithography and O

plasma etch process.

Fully Transparent Solution-Processed Carbon

Nanotube Thin Film Transistors on a Flexible

Substrate

Yanyan Deng, Mansun Chan, Min Zhang

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