硅/III-V异质集成模式锁定激光器的应用与进展

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"集成异质硅/III-V模式锁定激光器" 在信息技术领域，模式锁定激光器因其在光子雷达系统、无线数据传输和频率梳光谱学中的潜在应用而备受关注。这种激光器具备小型化、低成本、高可靠性和低功耗等优点，主要归功于半导体技术的发展。尤其是基于硅光子学的模式锁定激光器，通过利用高度先进的硅制造工艺，进一步提升了这些特性。激光器的工作原理和模式锁定：模式锁定是一种激光操作状态，其中激光脉冲以精确的时间间隔重复发射，形成一种等效的连续光谱，称为频率梳。这种技术的核心在于实现激光内部的四波混频和非线性光学效应，使激光能够在时间上保持锁模状态，产生超短脉冲。硅光子学的优势：硅光子学是利用硅材料作为光子器件的基础，由于硅的高集成度和与现有微电子工艺的兼容性，可以实现更复杂、更小的光子集成电路。此外，硅的低损耗特性使其在光通信和光计算等领域具有巨大的潜力。模式锁定激光器结合硅光子学，可以实现更高性能的集成光源，适用于各种应用，如高速光通信网络和精密光谱分析。设计细节对性能的影响：激光器的性能高度依赖于其设计细节，包括增益介质的特性、谐振腔的结构、调制机制以及非线性光学组件的选择。例如，选择合适的III-V族半导体材料（如镓砷化物）与硅结合，可以提供必要的增益和非线性特性。同时，优化谐振腔长度和反射率，可以控制脉冲的形成和重复率。此外，有效的调制机制（如电光调制或声光调制）对于稳定模式锁定至关重要。激光器的应用： 1. 光子雷达系统：模式锁定激光器产生的短脉冲可以提供高分辨率的距离和速度信息，对目标进行精确探测。 2. 无线数据传输：高速光通信系统利用模式锁定激光器产生的宽带光谱，实现高数据速率的无线传输。 3. 频率梳光谱学：频率梳的特性使得光谱测量精度极高，适用于化学和生物样品的精细光谱分析。集成异质硅/III-V模式锁定激光器是当前科研和工业界的重要研究方向，它不仅推动了光子技术的进步，也为多种领域的技术创新提供了强大的工具。随着技术的不断发展，我们期待看到更多高效、小型化的模式锁定激光器解决方案出现在市场上，以满足不断增长的高速通信和精密测量需求。

Figure 3 shows the peak power of lasers from the literature

survey. There is a generally decreasing trend of peak power ver-

sus repetition frequency, because the laser CW power is divided

up between more pulses at higher frequency. Integrated lasers

typically have 6–10 times lower peak power because of the

excess loss introduced by the integrated components. The

98 mW peak power of the laser presented in this work, shown

as a black “X”, is the highest of any fully integrated laser at

20 GHz. One integrated mirror laser, at 40 GHz, beats the

trend by integrating a high-power flared amplifier on-chip with

the laser [23]. Approximate trend lines are shown, representing

the decrease in peak power due to increasing repetition rate.

Fully integrated lasers are typically 1 order of magnitude lower

in peak power due to excess loss in the integrated components.

Figure 4 shows the 3 dB passively mode-locked RF line-

width of lasers from literature. There are comparatively fewer

data points on this chart, since this measurement is less com-

monly performed than autocorrelation. Like peak power, the

linewidth generally improves—trending downward—with

decreasing frequency. A few notable exceptions to the trend are

indicated with superscripts. “a” and “b”, like the laser presented

in this work, are heterogeneous silicon/InP lasers, specifically

with very long cavities formed from low-loss silicon wave-

guides, which reduces the Schawlow–Townes linewidth, a con-

tributor to the RF linewidth in mode-locked lasers [54]. The

laser at “a” reported only its 10 dB linewidth, which is shown in

the figure regardless; assuming a Lorentzian line shape, this

would correspond to 450 Hz 3 dB linewidth. The laser at “c”

uses the AlGaInAs quaternary for its waveguide and quantum

well, instead of the much more common InGaAsP. AlGaInAs is

reported to have lower linewidth enhancement factor than

InGaAsP [13,55], which should reduce the Schawlow–

Townes linewidth. The laser at “d” does not have a passive

waveguide; instead, it has a butt-joint-regrown uni-traveling-

carrier absorber design [30] and displays an impressive 900 fs

pulse width as well as the 3 kHz linewidth. Approximate trend

lines are shown, with blue representing Fabry–Perot lasers and

purple representing fully integrated lasers. The outliers at a, b,

c, and d were not considered part of the trend. It is notable that

linewidths of the three fully integrated heterogeneous Si lasers

are significantly lower than those of the majority of fully inte-

grated devices.

3. EXPERIMENT

The laser performance was optimized by producing a standard-

ized test laser in a high-yield fabrication process and then vary-

ing individual elements of the design. Thanks to wafer-scale

fabrication, many different device designs can be fabricated

Fig. 2. Pulse width of a selection of mode-locked laser diodes from

the literature.

Fig. 3. Peak power of a selection of lasers from the literature, in-

cluding this work. The colored lines represent approximate trends;

purple is for fully integrated lasers, and blue is for Fabry–Perot lasers.

The silicon lasers were not considered part of the trend.

Fig. 4. 3 dB passively-mode locked RF linewidth of a selection of

mode-locked lasers from the literature. The colored lines represent

approximate trends; purple is for fully integrated lasers, and blue is

for Fabry–Perot lasers. The silicon lasers and the two labeled outliers

were not considered part of the trend.

470 Vol. 6, No. 5 / May 2018 / Photonics Researc h

Research Article

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