SD2.0标准详解：物理层技术规格

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"SD2.0标准是关于固态存储设备的一种行业规范，由SD协会（SDCard Association）发布，该标准在2006年9月25日更新至版本2.00。SD2.0标准主要关注物理层的设计，旨在促进SD卡（Secure Digital Card）在电子设备中的高效、兼容性以及安全性。该标准详细规定了SD卡的电气、机械和物理特性，包括数据传输速度、接口尺寸、电源需求、卡片类型（如Class A、Class B等）以及错误检测和修正机制。它涵盖了SD卡的物理层规范，包括信号频率、接口时序、电源管理以及各种操作模式，如正常模式、休眠模式和待机模式。在SD2.0标准中，一个重要变化是在2006年4月3日的1.10版本基础上进行的修订，引入了新的补充笔记，并对之前版本进行了优化和扩展，以适应技术的发展和市场需求。此外，SD协会作为出版方，提供官方联系信息，包括电话、传真和电子邮件地址，以便用户获取最新信息和解答疑问。 SD2.0标准对于制造商来说，是确保其产品与市场上的其他SD卡设备兼容的重要依据，同时对于消费者而言，这意味着更快的数据读写速度、更好的性能以及更稳定的存储体验。该标准的持续更新反映了固态存储技术的进步，对推动电子设备特别是移动设备的存储技术革新起到了关键作用。" 这个概述突出了SD2.0标准的核心内容、修订历史、制定者以及对整个行业的意义，旨在帮助读者理解并评估该标准在现代信息技术中的地位和影响。

Physical Layer Simplified Specification Version 2.00

3. SD Memory Card System Concept

Description here is a blank for the Simplified Specification.

3.1 Read-Write Property

In terms of read-write property, two types of SD Memory Cards are defined:

• Read/Write (RW) cards (Flash, One Time Programmable - OTP, Multiple Time Programmable -

MTP). These cards are typically sold as blank (empty) media and are used for mass data storage,

end user video, audio or digital image recording

• Read Only Memory (ROM) cards. These cards are manufactured with fixed data content. They are

typically used as a distribution media for software, audio, video etc.

3.2 Supply Voltage

In terms of operating supply voltage, two types of SD Memory Cards are defined:

• High Voltage SD Memory Cards that can operate within the voltage range of 2.7-3.6 V.

• Dual Voltage SD Memory Cards –Dual Voltage SD Memory Cards that can operate within the

voltage range of Low Voltage Range (T.B.D) and 2.7-3.6 V.

Note that details of Dual Voltage SD Memory Card will be defined in future specification.

3.3 Card Capacity

In terms of capacity, two types of SD Memory Cards are defined:

• Standard Capacity SD Memory Cards supports capacity up to and including 2 G bytes (2

bytes).

All versions of the Physical Specifications define the Standard Capacity SD Memory Card.

• High Capacity SD Memory Cards supports capacity more than 2 G bytes (2

bytes) and this version

of specification limits capacity up to and including 32 GB. High Capacity SD Memory Card is newly

defined from the Physical Layer Specification Version 2.00.

Only hosts that are compliant to the Physical Layer Specification version 2.00 or higher and the SD File

System Specification Ver2.00 can access High Capacity SD Memory Cards. Other hosts fail to initialize

High Capacity SD Memory Cards (See Figure 3-1).

Note:

1. The Part 1 Physical Layer Specification Version 2.00 and Part 2 File System Specification

Version 2.00 allow Standard Capacity SD Memory Cards to have capacity up to and

including 2 GB and High Capacity SD Memory Cards to have capacity up to and including

32 GB. SD Memory Cards with a capacity greater than 32 GB will be available with updated

versions of Part 1 and Part 2 Specifications.

2. Hosts that can access (read and/or write) SD Memory Cards with a capacity greater than 2

GB and up to and including 32 GB, shall also be able to access SD Memory Cards with a

capacity of 2 GB or less.

Physical Layer Simplified Specification Version 2.00

3.5 Bus Topology

This section is a blank for the Simplified Specification.

3.6 Bus Protocol

3.6.1 SD Bus

Communication over the SD bus is based on command and data bit streams that are initiated by a start

bit and terminated by a stop bit.

• Command: a command is a token that starts an operation. A command is sent from the host either

to a single card (addressed command) or to all connected cards (broadcast command). A command

is transferred serially on the CMD line.

• Response: a response is a token that is sent from an addressed card, or (synchronously) from all

connected cards, to the host as an answer to a previously received command. A response is

transferred serially on the CMD line.

• Data: data can be transferred from the card to the host or vice versa. Data is transferred via the

data lines.

Figure 3-2: “no response” and “no data” Operations

Card addressing is implemented using a session address, assigned to the card during the initialization

phase. The structure of commands, responses and data blocks is described in Chapter 4. The basic

transaction on the SD bus is the command/response transaction (refer to Figure 3-2). This type of bus

transaction transfers their information directly within the command or response structure. In addition,

some operations have a data token.

Data transfers to/from the SD Memory Card are done in blocks. Data blocks are always succeeded by

CRC bits. Single and multiple block operations are defined. Note that the Multiple Block operation mode

is better for faster write operation. A multiple block transmission is terminated when a stop command

follows on the CMD line. Data transfer can be configured by the host to use single or multiple data lines.

command response

block read operation

data stop operation

CMD

DAT

from

host

to card

stop command

stops data transfer

data from card

to host

from

card

to host

data block crc

data block crc data block crc

multiple block read operation

Figure 3-3: (Multiple) Block Read Operation

The block write operation uses a simple busy signaling of the write operation duration on the DAT0 data

line (see Figure 3-4) regardless of the number of data lines used for transferring the data.

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