GSM 11.11英文版：SIM与GSM通信系统交互标准详解

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GSM11.11-英文版是欧洲电信标准研究所(ETSI)发布的一项标准，其全称为"Digital Cellular Telecommunications System (Phase 2+); Specification of the Subscriber Identity Module - Mobile Equipment (SIM-ME) Interface"。这个第五版标准于1998年12月发布，主要关注的是全球系统移动通信（GSM）网络中SIM卡与移动设备(ME)之间的交互。GSM是全球广泛采用的第二代蜂窝移动通信技术，它规范了SIM卡在移动电话中的功能和通信接口。 GSM11.11版本5.10.1 Release 1996是关于SIM卡的重要组成部分，它定义了SIM卡如何与手机进行身份验证、数据存储、鉴权过程以及安全性方面的交互。SIM卡作为用户的身份凭证，包含了用户识别信息，如IMSI（国际移动用户识别码），用于区别不同的用户并保证网络的安全性。SIM卡还负责存储用户的个人化设置、服务数据和其他特定功能，如预付费余额。在标准中，重点介绍了SIM-ME接口的设计和实现，确保了不同厂商生产的SIM卡和移动设备之间的兼容性。该接口定义了数据传输、命令执行、错误处理等行为，并对加密算法和安全协议进行了规定，以保护用户隐私和防止欺诈行为。此外，标准还强调了版权保护，指出任何复制或使用内容都必须得到书面许可，以维护知识产权。ETSI通过指定的联系方式（如电话、传真和互联网地址）提供进一步的信息和服务，声明所有权利保留，并且要求尊重标准的版权和限制。 GSM11.11-英文版是GSM网络中至关重要的技术文档，对于手机制造商、网络运营商和SIM卡供应商来说，理解和遵循这一标准是确保产品互操作性和安全性的重要依据。随着移动通信技术的发展，GSM11.11可能会被后续版本更新和完善，以适应不断变化的技术需求。

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ETS 300 977 (GSM 11.11 version 5.10.1 Release 1996): December 1998

4 Physical characteristics

Two physical types of SIM are specified. These are the "ID-1 SIM" and the "Plug-in SIM".

The physical characteristics of both types of SIM shall be in accordance with ISO 7816-1,2 [24, 25] unless

otherwise specified. The following additional requirements shall be applied to ensure proper operation in

the GSM environment.

4.1 Format and layout

The information on the exterior of either SIM should include at least the individual account identifier and the

check digit of the IC Card Identification (see clause 10, EF

ICCID

4.1.1 ID-1 SIM

Format and layout of the ID-1 SIM shall be in accordance with ISO 7816-1,2 [24, 25].

The card shall have a polarization mark (see GSM 02.07 [3]) which indicates how the user should insert

the card into the ME.

The ME shall accept embossed ID-1 cards. The embossing shall be in accordance with ISO/IEC 7811 [22,

23]. The contacts of the ID-1 SIM shall be located on the front (embossed face, see ISO/IEC 7810 [21])

of the card.

NOTE: Card warpage and tolerances are now specified for embossed cards in

ISO/IEC 7810 [21].

4.1.2 Plug-in SIM

The Plug-in SIM has a width of 25 mm, a height of 15 mm, a thickness the same as an ID-1 SIM and a

feature for orientation. See figure A.1 in normative annex A for details of the dimensions of the card and

the dimensions and location of the contacts.

Annexes A.1 and A.2 of ISO 7816-1 [24] do not apply to the Plug-in SIM.

Annex A of ISO 7816-2 [25] applies with the location of the reference points adapted to the smaller size.

The three reference points P1, P2 and P3 measure 7,5 mm, 3,3 mm and 20,8 mm, respectively, from 0.

The values in table A.1 of ISO 7816-2 [25] are replaced by the corresponding values of figure A.1.

4.2 Temperature range for card operation

The temperature range for full operational use shall be between -25°C and +70°C with occasional peaks of

up to +85°C. "Occasional" means not more than 4 hours each time and not over 100 times during the life

time of the card.

4.3 Contacts

4.3.1 Provision of contacts

ME: Contacting elements in the ME in positions C4 and C8 are optional, and are not used in the GSM

application. They shall present a high impedance to the SIM card in the GSM application. If it is

determined that the SIM is a multi-application ICC, then these contacts may be used. Contact C6

need not be provided for Plug-in SIMs.

SIM: Contacts C4 and C8 need not be provided by the SIM, but if they are provided, then they shall not

be connected internally in the SIM if the SIM only contains the GSM application. Contact C6 shall

not be bonded in the SIM for any function other than supplying Vpp.

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ETS 300 977 (GSM 11.11 version 5.10.1 Release 1996): December 1998

4.3.2 Activation and deactivation

The ME shall connect, activate and deactivate the SIM in accordance with the Operating Procedures

specified in ISO/IEC 7816-3 [26].

For any voltage level, monitored during the activation sequence, or during the deactivation sequence

following soft power-down, the order of the contact activation/deactivation shall be respected.

NOTE 1: Soft Power switching is defined in GSM 02.07 [3].

NOTE 2: It is recommended that whenever possible the deactivation sequence defined in

ISO/IEC 7816-3 [26] should be followed by the ME on all occasions when the ME is

powered down.

If the SIM clock is already stopped and is not restarted, the ME is allowed to deactivate all the contacts in

any order, provided that all signals reach low level before Vcc leaves high level. If the SIM clock is already

stopped and is restarted before the deactivation sequence, then the deactivation sequence specified in

ISO/IEC 7816-3 [26] subclause 5.4 shall be followed.

When Vpp is connected to Vcc, as allowed by GSM (see clause 5), then Vpp will be activated and

deactivated with Vcc, at the time of the Vcc activation/deactivation, as given in the sequences of

ISO/IEC 7816-3 [26] subclauses 5.1 and 5.4.

The voltage level of Vcc, used by GSM, differs from that specified in ISO/IEC 7816-3 [26]. Vcc is powered

when it has a value between 4,5 V and 5,5 V.

4.3.3 Inactive contacts

The voltages on contacts C1, C2, C3, C6 and C7 of the ME shall be between 0 and ± 0,4 volts referenced

to ground (C5) when the ME is switched off with the power source connected to the ME. The

measurement equipment shall have a resistance of 50 kohms when measuring the voltage on C2, C3, C6

and C7. The resistance shall be 10 kohms when measuring the voltage on C1.

4.3.4 Contact pressure

The contact pressure shall be large enough to ensure reliable and continuous contact (e.g. to overcome

oxidisation and to prevent interruption caused by vibration). The radius of any curvature of the contacting

elements shall be greater than or equal to 0,8 mm over the contact area.

Under no circumstances may a contact force be greater than 0,5 N per contact.

Care shall be taken to avoid undue point pressure to the area of the SIM opposite to the contact area.

Otherwise this may damage the components within the SIM.

4.4 Precedence

For Mobile Equipment, which accepts both an ID-1 SIM and a Plug-in SIM, the ID-1 SIM shall take

precedence over the Plug-in SIM (see GSM 02.17 [6]).

4.5 Static Protection

Considering that the SIM is a CMOS device, the ME manufacturer shall take adequate precautions (in

addition to the protection diodes inherent in the SIM) to safeguard the ME, SIM and SIM/ME interface

from static discharges at all times, and particularly during SIM insertion into the ME.

5 Electronic signals and transmission protocols

Electronic signals and transmission protocols shall be in accordance with ISO/IEC 7816-3 [26] unless

specified otherwise. The following additional requirements shall be applied to ensure proper operation in

the GSM environment.

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ETS 300 977 (GSM 11.11 version 5.10.1 Release 1996): December 1998

The choice of the transmission protocol(s), to be used to communicate between the SIM and the ME, shall

at least include that specified and denoted by T=0 in ISO/IEC 7816-3 [26].

The values given in the tables hereafter are derived from ISO/IEC 7816-3 [26], subclause 4.2 with the

following considerations:

-V

and V

always refer to the device (ME or SIM) which is driving the interface. V

and V

always refer to the device (ME or SIM) which is operating as a receiver on the interface.

- This convention is different to the one used in ISO/IEC 7816-3 [26], which specifically defines an

ICC for which its current conventions apply. The following clauses define the specific core

requirements for the SIM, which provide also the basis for Type Approval. For each state (V

, V

and V

) a positive current is defined as flowing out of the entity (ME or SIM) in that state.

- The high current options of ISO/IEC 7816-3 [26] for V

and V

are not specified for the SIM as

they apply to NMOS technology requirements. No realization of the SIM using NMOS is foreseen.

5.1 Supply voltage Vcc (contact C1)

The SIM shall be operated within the following limits:

Table 1: Electrical characteristics of Vcc under normal operating conditions

Symbol Minimum Maximum Unit

Vcc 4,5 5,5 V

Icc 10 mA

The current consumption of the SIM shall not exceed the value given in table 1 during any state (including

activation and deactivation as defined in subclause 4.3.2).

When the SIM is in idle state (see below) the current consumption of the card shall not exceed 200 µA at

1 MHz and 25°C. If clock stop mode is allowed, then the current consumption shall also not exceed 200 µA

while the clock is stopped.

The ME shall source the maximum current requirements defined above. It shall also be able to counteract

spikes in the current consumption of the card up to a maximum charge of 40 nAs with no more than 400 ns

duration and an amplitude of at most 200 mA, ensuring that the supply voltage stays in the specified range.

NOTE: A possible solution would be to place a capacitor (e.g. 100 nF, ceramic) as close as

possible to the contacting elements.

5.2 Reset (RST) (contact C2)

The ME shall operate the SIM within the following limits:

Table 2: Electrical characteristics of RST under normal operating conditions

Symbol Conditions Minimum Maximum

OHmax

= +20 µA Vcc-0,7 Vcc (note)

OLmax

= -200 µA 0V (note) 0,6 V

out

= C

= 30 pF 400 µs

NOTE: To allow for overshoot the voltage on RST shall remain

between -0,3 V and Vcc+0,3 V during dynamic operation.

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ETS 300 977 (GSM 11.11 version 5.10.1 Release 1996): December 1998

5.3 Programming voltage Vpp (contact C6)

SIMs shall not require any programming voltage on Vpp. The ME need not provide contact C6. If the ME

provides contact C6, then, in the case of the ID-1 SIM the same voltage shall be supplied on Vpp as on

Vcc, while in the case of Plug-in SIMs the ME need not provide any voltage on C6. Contact C6 may be

connected to Vcc in any ME but shall not be connected to ground.

5.4 Clock CLK (contact C3)

The SIM shall support 1 to 5 MHz. The clock shall be supplied by the ME. No "internal clock" SIMs shall be

used.

If a frequency of 13/4 MHz is needed by the SIM to run the authentication procedure in the allotted time

(see GSM 03.20 [11]), or to process an ENVELOPE command used for SIM Data Download, bit 2 of byte

1 in the file characteristics shall be set to 1. Otherwise a minimum frequency of 13/8 MHz may be used.

The duty cycle shall be between 40 % and 60 % of the period during stable operation.

The ME shall operate the SIM within the following limits:

Table 3: Electrical characteristics of CLK under normal operating conditions

Symbol Conditions Minimum Maximum

OHmax

= +20 µA 0,7xVcc Vcc (note)

OLmax

= -200 µA 0 V (note) 0,5 V

out

= C

= 30 pF 9 % of period with a maximum

of 0,5 µs

NOTE: To allow for overshoot the voltage on CLK shall remain between -0,3 V

and Vcc+0,3 V during dynamic operation.

5.5 I/O (contact C7)

Table 4 defines the electrical characteristics of the I/O (contact C7). The values given in the table have the

effect of defining the values of the pull-up resistor in the ME and the impedances of the drivers and

receivers in the ME and SIM.

Table 4: Electrical characteristics of I/O under normal operating conditions

Symbol Conditions Minimum Maximum

IHmax

= ± 20 µA (note 2) 0,7xVcc Vcc+0,3 V

ILmax

= +1 mA -0,3 V 0,8 V

(note 1) I

OHmax

= + 20µA 3,8 V Vcc (note 3)

OLmax

= -1 mA 0 V (note 3) 0,4 V

out

= C

= 30 pF 1 µs

NOTE 1: It is assumed that a pull-up resistor is used in the interface device

(recommended value: 20 kohms).

NOTE 2: During static conditions (idle state) only the positive value can apply.

Under dynamic operating conditions (transmission) short term voltage

spikes on the I/O line may cause a current reversal.

NOTE 3: To allow for overshoot the voltage on I/O shall remain between -0,3 V

and Vcc+0,3 V during dynamic operation.

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ETS 300 977 (GSM 11.11 version 5.10.1 Release 1996): December 1998

5.6 States

There are two states for the SIM while the power supply is on:

- The SIM is in operating state when it executes a command. This state also includes transmission

from and to the ME.

- The SIM is in idle state at any other time. It shall retain all pertinent data during this state.

The SIM may support a clock stop mode. The clock shall only be switched off subject to the conditions

specified in the file characteristics (see clause 9).

Clock stop mode. An ME of Phase 2 or later shall wait at least 1 860 clock cycles after having received

the last character, including the guard time (2 etu), of the response before it switches off the clock (if it is

allowed to do so). It shall wait at least 744 clock cycles before it sends the first command after having

started the clock.

To achieve phase compatibility, the following procedure shall be adhered to:

A SIM of Phase 2 or later shall always send the status information "normal ending of the command" after

the successful interpretation of the command SLEEP received from a Phase 1 ME. An ME of Phase 2 or

later shall not send a SLEEP command.

A Phase 1 ME shall wait at least 744 clock cycles after having received the compulsory acknowledgement

SW1 SW2 of the SLEEP command before it switches off the clock (if it is allowed to do so). It shall wait at

least 744 clock cycles before it sends the first command after having started the clock.

5.7 Baudrate

The initial baudrate (during ATR) shall be: (clock frequency)/372. Subsequent baudrate shall be: (clock

frequency)/372 unless the PTS procedure has been successfully performed. In that case the negotiated

baudrate shall be applied according to subclause 5.8.2.

5.8 Answer To Reset (ATR)

The ATR is information presented by the SIM to the ME at the beginning of the card session and gives

operational requirements.

5.8.1 Structure and contents

The following table gives an explanation of the characters specified in ISO/IEC 7816-3 [26] and the

requirements for their use in GSM. The answer to reset consists of at most 33 characters. The ME shall

be able to receive interface characters for transmission protocols other than T=0, historical characters and

a check byte, even if only T=0 is used by the ME.

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