光纤通信系统与网络（5th版）-英文原版

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"Optical Fiber Telecommunications-Systems and Networks（5th）是一本关于光纤通信的英文原版教材，由学术界和工业界的专家撰写，详细介绍了光波通信领域的最新进展，特别是设备、子系统、系统和网络方面。该书强调以经济高效的方式实现高带宽通信，适合研发工程师、经理、光学系统实施者、大学研究人员和学生、网络运营商以及投资者参考使用。" 《光纤通信-系统和网络第五版》是自1970年代初期以来记录光波通信研发进展的系列书籍的第五版。这本教材由Ivan P. Kaminow和Tingye Li两位在通信领域有深厚造诣的专家共同参与编写。Ivan P. Kaminow在其42年的贝尔实验室职业生涯中，对电光调制器、铁电材料的拉曼散射、集成光学、半导体激光器（DBR、脊波导InGaAsP和多频率）、双折射光纤以及WDM网络进行了开创性研究。退休后，他在加利福尼亚大学伯克利分校担任电气工程兼职教授。Tingye Li在AT&T工作了41年，他的激光谐振腔模式的工作被认为是经典之作。他和他的团队自1960年代末期以来，一直在光波技术和系统方面进行开创性研究，并推动了放大WDM传输系统的开发和部署。本书涵盖了广泛的光纤通信主题，包括但不限于： 1. 光电子器件：深入探讨了各种光电子器件，如半导体激光器、电光调制器和光电探测器，这些器件是光纤通信系统的基础。 2. 子系统技术：涵盖WDM（波分复用）组件，如掺铒光纤放大器（EDFA）、阵列波导光栅（AWG）和光纤法布里-珀罗滤波器，这些技术使得在单根光纤中同时传输多个独立的光信号成为可能。 3. 系统设计与实现：详细讲解了光纤通信系统的构建，包括信号处理、噪声控制、信道容量和传输距离优化等方面的考虑。 4. 光纤网络：分析了WDM本地和广域网络的设计、优化和运营，以及如何利用WDM技术提高网络容量和效率。 5. 高带宽通信：探讨了如何在成本效益最优的情况下实现高带宽通信，这对于满足不断增长的数据传输需求至关重要。 6. 网络升级与扩展：书中可能涉及了如何利用新型光通信技术来升级现有网络，以应对日益增长的宽带服务和新兴应用的需求。 7. 投资与市场分析：对于投资者而言，教材可能包含了对光通信行业的市场趋势和投资机会的评估。该书对于希望深入了解光纤通信技术及其应用的专业人士来说，是一份宝贵的参考资料。无论是从事研发工作、实施光学系统、进行学术研究，还是管理和规划网络，或者是对投资领域感兴趣的读者，都能从中受益匪浅。通过阅读《光纤通信-系统和网络第五版》，读者可以全面了解这一领域的最新发展，从而更好地适应和推动未来通信技术的进步。

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growth rate, which generated enthusiasm and demand, leading to unsustainable

expectations. Could such a discontinuity happen again? Perhaps, but chastened

investors now seem to be following a more gradual and sensible path. Throughout

the “bubble-and-bust” until the present, the actual demand for bandwidth has

grown at a very healthy 80% per year globally; thus, real traffic demand

experienced no bubble at all. The growth and capacity needs are real, and should

continue in the future.

As a final comment, we note that optical fiber communications is firmly

entrenched as part of the global information infrastructure. The only question is

how deeply will it penetrate and complement other forms of communications, e.g.,

wireless, access, and on-premises networks, interconnects, satellites, etc. This

prospect is in stark contrast to the voice-based future seen by OFT, published in

1979, before the first commercial intercontinental or transatlantic cable systems

were deployed in the 1980s. We now have Tb/s systems for metro and long-haul

networks. It is interesting to contemplate wha t topics and concerns might appear in

OFT VI.

1.3 OFT V VOLUME A: COMPONENTS

AND SUBSYSTEMS

1.3.1 Chapter 1. Overview of OFT V volumes A & B

(Ivan P. Kaminow, Tingye Li, and Alan E. Willner )

This chapter briefly reviews herewith all the chapters contained in both volumes of

OFT V.

1.3.2 Chapter 2. Semiconductor quantum dots:

Genesis—The Excitonic Zoo—novel devices

for future applications (Dieter Bimberg)

The ultimate class of semiconductor nanostructures, i.e., “quantum dots” (QDs), is

based on “dots” smaller than the de Broglie wavelength in all three dimensions.

They constitute nanometer-sized clusters that are embedded in the dielectric

matrix of another semiconductor. They are often self-similar and can be formed

by self-organized growth on surfaces. Single or few quantum dots enable novel

devices for quantum information processing, and billions of them enable active

centers in optoelectronic devices like QD lasers or QD optical amplifiers. This

chapter covers the area of quantum dots from growth via various band structures to

optoelectronic device applications. In addition, high-speed laser and amplifier

operations are described.

1. Overview of OFT V Volumes A & B 3

1.3.3 Chapter 3. High-speed low-chirp semiconductor lasers

(Shun Lien Chuang, Guobin Liu, and Piotr Konrad

Kondratko)

One advantage of using quantum wells and quantum dots for the active region of

lasers is the lower induced chirp when such lasers are directly modulated, permit-

ting direct laser modulation that can save on the cost of separate external

modulators. This chapter provides a comparison of InAlGaAs with InGaAsP

long-wavelength quantum-well lasers in terms of high-speed performance, and

extracts the important parameters such as gain, differential gain, photon lifetime,

temperature dependence, and chirp. Both DC characteristics and high-speed direct

modulation of quantum-well lasers are presented, and a comparison with theore-

tical models is made. The chapter also provides insights into novel quantum-dot

lasers for high-speed operation, including the ideas of p-type doping vs tunneling

injection for broadband operation.

1.3.4 Chapter 4. Recent advances in surface-emitting lasers

(Fumio Koyama)

Vertical cavity surface-emitting las ers (VCSELs) have a number of special proper-

ties (compared with the more familiar edge-emitting lasers) that permit some novel

applications. This chapter begins with an introduction which briefly surveys recent

advances in VCSELs, several of that are then treated in detail. These include

techniques for realizing long-wavelength operation (as earlier VCSELs were

limited to operation near 850 nm), the performance of dense VCSEL arrays that

emit a range of discrete wavelengths (as large as 110 in number), and MEMS-

based athermal VCSELs. Also, plasmonic VCSELs that produce subwavelength

spots for high-density data storage and detection are examined. Finally, work on

all-optical signal processing and slow light is presented.

1.3.5 Chapter 5. Pump diode lasers (Christoph Harder)

Erbium-doped fiber amplifiers (EDFAs) pumped by bulky argon lasers were

known for several years before telecom system designers took them seriously;

the key development was a compact, high-power sem iconductor pump laser.

Considerable effort and investment have gone into today’s practical pump lasers,

driven by the importance of EDFAs in realizing dense wavelength division multi-

plexed (DWDM) systems. The emphasis has been on high power, efficiency, and

reliability. The two main wavelength ranges are in the neighborhood of 980 nm for

low noise and 1400 nm for remote pumping of EDFAs. The 1400-nm band is also

suitable for Raman amplifiers, for which very high power is needed.

4 Ivan P. Kaminow et al.

This chapter details the many lessons learned in the design for manufacture of

commercial pump lasers in the two bands. Based on the performance developed for

telecom, numerous other commercial applications for high-power lasers have

emerged in manufacturing and printing; these applications are also discussed.

1.3.6 Chapter 6. Ultrahigh-speed laser modulation by

injection locking (Connie J. Chang-Hasnain and

Xiaoxue Zhao)

It has been known for decades that one oscillator (the slave) can be locked in

frequency and phase to an external oscillator (the master) coupled to it. Current

studies of injection-locked lasers show that the dynamic characteristics of the

directly modulated slave are much improved over the same laser when freely

running. Substantial improvements are found in modulation bandwidth for analog

and digital modulation, in linearity, in chirp reduction and in noise performance.

In this chapter, theoretical and experimental aspects of injection locking in all

lasers are reviewed with emphasis on the authors’ research on VCSELs (verti cal

cavity surface-emitting lasers). A recent promising application in passive optical

networks for fiber to the home (FTTH) is also discussed.

1.3.7 Chapter 7. Recent developments in high-speed

optical modulators (Lars Thyle

n, Urban Westergren,

Petter Holmstro

m, Richard Schatz, and Peter Ja

nes)

Current high-speed lightwave systems make use of electro-optic modulators based

on lithium niobate or electroabsorption modulators based on semiconductor materi-

als. In commercial systems, the very high-speed lithium niobate devices often require

a traveling wave structure, while the semiconductor devices are usually lumped.

This chapter reviews the theory of high-speed modulators (at rates of 100 Gb/s)

and then considers practical design approaches, including comparison of lumped and

traveling-wave designs. The main emphasis is on electroabsorption devices based on

Franz–Keldysh effect, quantum-confined Stark effect and intersubband absorption.

A number of novel designs are described and experimental results given.

1.3.8 Chapter 8. Advances in photodetectors

(Joe Charles Campbell)

As a key element in optical fiber communications systems, photodetectors belong to

a well developed sector of photonics technology. Silicon p–i–n and avalanche photo-

diodes deployed in first-generation lightwave transmission systems operating at

0.82-mm wavelength performed very close to theory. In the 1980s, InP photodiodes

1. Overview of OFT V Volumes A & B 5

were developed and commercialized for systems that operated at 1.3- and 1.5-mm

wavelengths, albeit the avalanche photodiodes (APDs) were expensive and nonideal.

Introduction of erbium-doped fiber amplifiers and WDM technology in the 1990s

relegated APDs to the background, as p–i–n photoreceivers performed well in amplified

systems, whereas APDs were plagued by the amplified spontaneous emission noise.

Future advanced systems and special applications will require sophisticated devices

involving deep understanding of device physics and technology. This chapter focuses on

three primary topics: high-speed waveguide photodiodes for systems that operate at

100 Gb/s and beyond, photodiodes with high saturation current for high-power applica-

tions, and recent advances of APDs for applications in telecommunications.

1.3.9 Chapter 9. Planar lightwave circuits in fiber-optic

communications (Christopher R. Doerr and

Katsunari Okamoto)

The realization of one or more optical waveguide components on a planar substrate

has been under study for over 35 years. Today, individual components such as

splitters and arrayed waveguide grating routers (AWGRs) are in widespread

commercial use. Sophisticated functions, such as reconfigurable add–drop

multiplexers (ROADMs) and high-performance filters, have been demonstrated

by integrating elaborate combinations of such components on a single chip. For

the most part, these photonic integrated circuits (PICs), or planar lightwave

circuits (PLCs), are based on passive waveguides in lower index materials,

such as silica.

This chapter deals with the theory and design of such PICs. The following two

chapters (Chapters 11 and 12) also deal with PICs; however, they are designed to

be integrated with silicon electronic ICs, either in hybrid fashion by short wire

bonds to an InP PIC or directly to a silicon PIC.

1.3.10 Chapter 10. III–V photonic integrated circuits

and their impact on optical network architectures

(Dave Welch, Chuck Joyner, Damien Lambert, Peter

W. Evans, and Maura Raburn)

InP-based semiconductors are unique in their capability to support all the photonic

components required for wavelength division multiplexed (WDM) transmitters

and receivers in the telecom band at 1550 nm. Present subsys tems have connected

these individual components by fibers or lenses to form hybrid transmitters and

receivers for each channel.

Recently, integrated InP WDM transmitter and receiver chips that provide

10 channels, each operating at 10 Gb/s, have been shown to be technically and

6 Ivan P. Kaminow et al.

economically viable for deployment in commercial WDM systems. The photonic

integrated circuits are wire-bonded to adjacent silicon ICs. Thus a single board

provides optoelectronic regeneration for 10 channels, dramatically reducing

interconnection complexity and equipment space. In addition, as in legacy single-

channel systems, the “digital” approach for transmission (as compared to “all-optical”)

offers ease of network monitoring and management. This chapter covers the technology

of InP photonic integrated circuits (PICs) and their commercial application. The impact

on optical network architecture and operation is discussed and technology advances for

future systems are presented.

1.3.11 Chapter 11. Silicon photonics (Cary Gunn

and Thomas L. Koch)

Huge amounts of money have been invested in silicon processing technology,

thanks to a steady stream of applications that justified the next stage of proces-

sing development. In addition to investment, innovative design, process disci-

pline and large-volume runs made for economic success. The InP PICs described

in the previous c hapter owe their success to lessons learned in silicon IC

processing.

Many people have been attracted by the prospects of fabricating PICs using

silicon alone to capitalize on the investment and success of silicon ICs. To succeed

one requires a large-volume application and a design that can be made in an

operating silicon IC foundry facility. A further potential advantage is the oppor-

tunity to incorporate on the same photonic chip electronic signal processing. The

application to interconnects for high-performance computers is a foremost motiva-

tion for this work.

While silicon has proven to be the ideal material for electronic ICs, it is far from

ideal for PICs. The main shortcoming is the inability so far to make a good light

source or photodetector in silicon. This chapter discusses the successes and

challenges encountered in realizing silicon PICs to date.

1.3.12 Chapter 12. Photonic crystal theory: Temporal

coupled-mode formalism (Shanhui Fan)

Photonic crystal structures have an artificially created optical bandgap that is

introduced by a periodic array of perturbations, and different types of wave-

guides and cavities can be fabricated that uniquely use the band gap-based

confinement. These artificially created materials have been of great interest for

potential optical information processing applications, in part because they pro-

vide a common platform to miniaturize a large number of optical components

on-chip down to single wavelength scale. For this purpose, many devices can be

1. Overview of OFT V Volumes A & B 7

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光纤通信系统与网络（5th版）-英文原版

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