FM24C512: 512Kb Ferroelectric RAM 技术规格与特性
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"FM24C512PDF是一款关于Fram存储器的资料，适合于开发存储程序时使用。这份文档由Ramtron International Corporation提供，详细介绍了FM24C512这款512Kb Ferroelectric Nonvolatile RAM（铁电非易失性RAM）的特性、规格和功能。"
FM24C512是Ramtron公司生产的一款512Kbit的铁电随机存取存储器，其主要特点包括：
1. **组织结构**：该内存被组织为65,536个8位单元，即512Kbit的存储容量。
2. **高耐久性**：FM24C512拥有10亿次（10^10）的读写耐久性，这使得它在频繁读写操作的应用场景下依然保持稳定。
3. **长期数据保留**：在正常条件下，FM24C512能保证45年的数据保留时间，即使在断电情况下也能保持存储的信息。
4. **即时写入**：由于采用了NoDelay™技术，FM24C512支持即时写入，无需等待延迟，提高了写入效率。
5. **高速两线式串行接口**：FM24C512配备了先进的高速两线式串行接口，最大总线频率可达1MHz，并兼容100kHz和400kHz的旧版时序。
6. **低功耗运行**：该设备适用于5V电源工作，活跃状态下的电流仅为250μA（在100kHz时），待机状态下电流为120μA，符合行业标准配置。
7. **工业级温度范围**：FM24C512能在-40°C至+85°C的工业级温度范围内稳定工作，确保了在各种环境条件下的可靠性。
8. **封装形式**：采用8引脚绿色/RoHS EIAJ SOIC封装，符合环保标准，易于集成到各种系统设计中。
这份文档详细阐述了FM24C512的技术参数、性能优势以及应用领域，是开发人员在设计需要持久存储和高效读写功能的嵌入式系统或电子设备时的重要参考资料。FM24C512的高性能和低功耗特性使其特别适用于那些对数据保存有高要求且对电源效率敏感的应用，例如物联网设备、医疗仪器、汽车电子系统等。
FM24C512
Rev. 3.0
Sept. 2008 Page 3 of 12
Overview
The FM24C512 is a serial FRAM memory. The
device has 65,536 locations with 8 data bits each and
is accessed using an industry standard two-wire
interface. Functional operation of the FRAM is
similar to serial EEPROMs. The major difference
between the FM24C512 and a serial EEPROM
relates to its superior write performance.
Memory Architecture
The FM24C512 is logically organized as two 32,768
x 8 bit memory arrays for a total of 65,536 locations.
The device should be treated as two banks, each bank
being selectable by the most significant address bit
A15. The MSB is located in the Slave Address byte
and can be considered a bank select bit. See Figure 4.
Data bits are shifted serially into and out of the
device. The 65,536 addresses are accessed using the
two-wire protocol, which includes a Slave Address
(to distinguish from other non-memory devices), and
a 16-bit address.
The memory is read or written at the speed of the
two-wire bus. Unlike an EEPROM, it is not
necessary to poll the device for a ready condition
since writes occur at bus speed. By the time a new
bus transaction can be shifted into the part, a write
operation is complete. This is explained in more
detail in the interface section below.
Users can expect several obvious system benefits
from the FM24C512 due to its fast write cycle and
high endurance as compared with EEPROM.
However there are less obvious benefits as well. For
example in a high noise environment, the fast-write
operation is less susceptible to corruption than an
EEPROM since the write cycle is completed quickly.
By contrast, an EEPROM requiring milliseconds to
write is vulnerable to noise during much of the cycle.
Note that the FM24C512 contains no power
management circuits other than a simple internal
power-on reset. It is the user’s responsibility to
ensure that V
DD
is maintained within data sheet
tolerances to prevent incorrect operation.
Two-wire Interface
The FM24C512 employs a bi-directional two-wire
bus protocol using few pins and little board space.
Figure 2 illustrates a typical system configuration
using the FM24C512 in a microcontroller-based
system. The industry standard two-wire bus is
familiar to many users but is described in this section.
By convention, any device that is sending data onto
the bus is the transmitter while the target device for
this data is the receiver. The device that is controlling
the bus is the master. The master is responsible for
generating the clock signal for all operations. Any
device on the bus that is being controlled is a slave.
The FM24C512 is always a slave device.
The bus protocol is controlled by transition states in
the SDA and SCL signals. There are four conditions
including Start, Stop, Data bit, and Acknowledge.
Figure 3 illustrates the signal conditions that specify
the four states. Detailed timing diagrams are shown
in the Electrical Specifications section.
Microcontroller
SDA SCL
FM24C512
A1 A2
SDA SCL
FM24C512
A1 A2
V
DD
R
min
= 1.8 K?
R
max
= t
R
/C
bus
V
DD
Figure 2. Typical System Configuration
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