TS3A225E: 音频头戴式耳机开关器件

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"TI-TS3A225E.pdf 是一款由TI（德州仪器）推出的音频头戴式耳机开关器件，适用于手机、平板电脑、笔记本电脑等设备，旨在实现立体声插孔的智能管理，支持模拟麦克风的检测和切换。该器件具有低导通电阻，提供两种封装形式，并兼容I2C控制和外部触发检测，同时具备静电放电保护功能，符合行业标准。" TI-TS3A225E是专为音频设备设计的一款集成电路，其主要特性包括： 1. 工作电压范围广泛：该器件可在2.7V至4.5V的电压范围内正常工作，适合各种便携式电子设备的需求。 2. 针对不同应用场景：适用于手机、平板电脑和笔记本电脑，特别适合于管理立体声耳机插孔，确保音频输出的质量和稳定性。 3. 内置FET开关：TI-TS3A225E集成了两个场效应晶体管（FET），用于控制耳机插孔的开/关，提供低导通电阻，WCSP封装的Ron为70mΩ，QFN封装的Ron为100mΩ，确保了低损耗的音频信号传输。 4. 模拟麦克风检测：TS3A225E能够检测到模拟麦克风的存在，自动将麦克风线路连接到正确的位置，即使在不同的制造商配置下也能正常工作。 5. 自动检测与切换：通过I2C接口或外部触发引脚，可以进行检测和控制操作，实现插孔中不同设备的智能识别和切换。 6. 麦克风连接检测：该器件可以检测GND与麦克风的连接情况，确保正确的信号路径。 7. HDA兼容：支持高清音频（HDA）标准，可以与兼容的麦克风插件配合使用，提供插入指示功能。 8. I2C兼容性：TS3A225E支持1.8V兼容的I2C接口，方便系统集成和控制。 9. ESD保护：器件符合JESD22标准，提供2000V人体模型和500V充电器件的ESD保护，增强了系统的抗静电能力。总体而言，TI-TS3A225E是一款高性能、多功能的音频耳机开关，通过其先进的检测和控制机制，优化了音频设备的用户体验，同时也保证了设备的安全性和可靠性。

TS3A225E

www.ti.com.cn

ZHCS506A –AUGUST 2012–REVISED MAY 2013

ABSOLUTE MAXIMUM RATINGS

(1)(2)

over operating free-air temperature range (unless otherwise noted)

VALUE UNIT

Voltage range on V

(3)

–0.3 to 5 V

Voltage range on SCL, SDA, ADDR_SEL, DET_TRIGGER, MICP, MICN, SLEEVE_SENSE,

–0.3 to V

+0.5 V

RING2_SENSE, RING2, SLEEVE

(3)

Operating ambient temperature range -40 to 85 °C

J (MAX)

Maximum operating junction temperature 125 °C

stg

Storage temperature range –65 to 150 °C

Machine model (JESD 22 A115) 100 V

Charge device model (JESD 22 C101) 500 V

ESD

Human body model (JESD 22 A114) 2 kV

rating

Contact discharge on SLEEVE_SENSE, RING2_SENSE, RING2, SLEEVE, TIP_SENSE (IEC

8 kV

61000-4-2)

(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings

only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating

conditions is not implied. Exposure to absolute–maximum–rated conditions for extended periods may affect device reliability.

(2) In applications where high power dissipation and/or poor package thermal resistance is present, the maximum ambient temperature may

have to be derated. Maximum ambient temperature [T

A(max)

] is dependent on the maximum operating junction temperature [T

J(max)

], the

maximum power dissipation of the device in the application [P

D(max)

], and the junction-to-ambient thermal resistance of the part/package

in the application (Ω

), as given by the following equation: T

A(max)

= T

J(max)

– (θ

× P

D(max)

)

(3) All voltage values are with respect to network ground terminal.

RECOMMENDED OPERATING CONDITIONS

MIN MAX UNIT

Supply voltage range 2.7 4.5 V

Digital input voltage range (SDA, SCL, ADDR_SEL, DET_TRIGGER) 0 V

Input/Output voltage range (SLEEVE, SLEEVE_SENSE, RING2, RING2_SENSE, MICP,

0 V

MICN)

IO(

Input/Output voltage range for TIP –2 V

TIP)

SDA, SCL, ADDR_SEL 1.2 4.5 V

Input logic high

DET_TRIGGER V

× 0.65 V

SDA, SCL, ADDR_SEL 0 0.4 V

Input logic low

DET_TRIGGER 0 V

× 0.40 V

Operating temperature range –40 85 °C

TS3A225E

ZHCS506A –AUGUST 2012–REVISED MAY 2013

www.ti.com.cn

ELECTRICAL CHARACTERISTICS

Unless otherwise noted the specification applies over the V

range and operating junction temp –40°C ≤ T

≤ 70°C. Typical

values are for V

= 3.3V and T

= 25°C.

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

Input voltage range 2.7 3.3 4.5 V

Quiescent current V

MIC

= 1.8 V to V

8 10 µA

SDA output high voltage I

= 3 mA 0.3 V

IN-I2C

SCL, SDA input leakage V

MIC

= 1.8 V to V

0.1 1 µA

IN-ADDR

ADDR input leakage V

MIC

= 0 V 0.1 1 µA

SWITCH RESISTANCE

F1 (WCSP)

FET1 on resistance (WCSP Package) 70 mΩ

F1 (QFN)

FET1 on resistance (QFN Package) 100 mΩ

= 2.7 V, V

GND

= 0 V, I

GND

= 10 mA

(see Figure 3)

F2 (WCSP)

FET2 on resistance (WCSP Package) 70 mΩ

F2 (QFN)

FET2 on resistance (QFN Package) 100 mΩ

S1PS

S1PS on resistance 10 Ω

= 2.7 V,

S1PR

S1PR on resistance 10 Ω

SLEEVE_SENSE/RING2_SENSE

= 0 V to 2.7 V,

S1NS

S1NS on resistance 1 Ω

MIC

= ± 10 mA (see Figure 4)

S1NR

S1NR on resistance 1 Ω

MIC_PRESENT

/MIC_PRESENT pin output resistance V

= 2.7 V 25 Ω

SWITCH LEAKAGE CURRENT

OFF-0.1

FET1 and FET2 off leakage 1 µA

= 0 V to 2.7 V, V

OUT

= 0 V,

OFF-1

S1NS, S1NR off leakage 1 µA

= 4.5V (see Figure 5)

OFF-10

S1PS, S1PR off leakage 1 µA

ON-1

S1NS, S1NR on leakage 1 µA

= 0 V to 2.7 V, V

OUT

= 0 V,

= 4.5 V (see Figure 6)

ON-10

S1PS, S1PR on leakage 1 µA

SWITCH DYNAMIC CHARACTERISTICS

PSR

217

V = 200 mV

, f = 217 Hz –100 dB

Power supply rejection,

PSR

V = 200 mV

, f = 1 kHz –80 dB

= 5 Ω (see Figure 7)

PSR

20k

V = 200 mV

, f = 20 kHz –50 dB

SLEEVE_SENSE or RING2_SENSE to

ISO

V = 200 mV

, f = 20 kHz, R

= 50Ω –100 dB

MICP Isolation (see Figure 8)

SLEEVE_SENSE to RING2_SENSE V = 200 mV

, f = 20 kHz,

= 50Ω (see

SEP

–60 dB

Separation Figure 9)

0.003

THD

200

V = 200mV

, f = 20-20 kHz, R

= 600Ω

Total Harmonic Distortion (see

Figure 10)

0.002

THD

500

V = 500mV

, f = 20-20kHz, R

= 600Ω

Default 30 µs

BBM

Break-Before-Make Off Time

BBM register bit = 1’b1 60 µs

DETC

Detection sequence duration 360 500 ms

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TS3A225E: 音频头戴式耳机开关器件

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