梯度铝掺杂ZnO多层提升有机太阳能电池效率

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本研究论文探讨了梯度铝掺杂ZnO多层缓冲层（Gradient Al-doped ZnO multi-buffer layers, MBLs）在有机太阳能电池（Organic Solar Cells, OSCs）中的应用及其对光伏性能的影响。作者们首次将这种新型的电子传输层（Electron Transport Layer, ETL）材料用于有机太阳能电池的设计，通过采用简单易行的溶胶-凝胶工艺（sol-gel process）制备了三种不同类型的MBL，它们分别沉积在均质的ZnO缓冲层之上。相比于传统的多层ZnO缓冲结构，使用梯度掺杂MBL的OSCs表现出显著的性能提升。实验结果显示，功率转换效率从2.11%提高到了3.43%，这主要归功于以下几个关键因素：首先，MBL的梯度掺杂设计有助于提高光的透过率，使得更多的光能被吸收并转化为电能；其次，高掺杂的MBL能够优化电荷载流子（charge carriers）的传输，减少了能量损失，从而提升了整体效率；此外，MBL具有更高质量、密度更高且表面形态更均匀的特点，这有利于提高设备的稳定性及减少光反射，进一步增强了电池的性能。特别值得注意的是，带有ZnO/MBL（0.5：1.0 at%（Al / Zn））的器件不仅在功率转换效率上有所提升，还实现了短路电流和填充因子的同步提高。短路电流的增加意味着在光照条件下，电池能产生的电流更大，而填充因子的改善则表示在有限的光照范围内，电池能更有效地利用这些能量。因此，这项研究不仅提供了一种创新的方法来改进有机太阳能电池的电子传输层，而且展示了梯度掺杂MBL在提升OSC性能方面的巨大潜力。总结来说，该研究通过实验证明了梯度铝掺杂ZnO多层缓冲层作为有机太阳能电池电子传输层的有效性和优势，为优化有机太阳能电池的设计提供了新的思路和技术路线，有望在未来推动有机太阳能电池技术的发展和商业化应用。

Gradient Al-doped ZnO multi-buffer layers: Effect on the photovoltaic

properties of organic solar cells

Xuan Yu

a,b,1

, Xiaoming Yu

a,b,1

, Jianjun Zhang

, Hongjun Pan

Innovation Application Institute, Zhejiang Ocean University, Zhoushan, Zhejiang 316022, China

College of Electronic Information and Optical Engineering, Nankai University, Tianjin 300071, China

article info

Article history:

Received 6 August 2015

Received in revised form

2 September 2015

Accepted 4 September 2015

Available online 5 September 2015

Keywords:

Thin ﬁlms

Semiconductors

Inverted organic solar cells

Al-doped ZnO

Multi-buffer layers

abstract

In this work, gradient Al-doped ZnO multi-buffer layers (MBLs) were used as the electron transport

layers (ETLs) of organic solar cells (OSCs) for the ﬁrst time. Three kinds of MBLs were prepared using a

facile sol–gel process and deposited on a homo-buffer layer (ZnO). Compared to a device based on a

multi-ZnO buffer layer, devices with the gradient-doped MBL displayed enhanced power conversion

efﬁciency from 2.11% to 3.43%, which were caused by the efﬁcient light transmission and charge carrier

transport, derived from the higher ﬁlm qualities, denser and more uniform surface morphologies, and

improved conductivities of the gradient-doped MBLs. Results indicated that a device with ZnO/MBL

(0.5:1.0 at%(Al/Zn)) simultaneously enhanced the short-circuit current and ﬁll factor. This study presents

an innovative and effective method for improving the quality of ETLs for efﬁcient OSCs.

1. Introduction

Sol–gel derived ZnO thin-ﬁlms have attracted much attention

on account of their good transparency in the visible spectral range,

easy production via a solution process, and potential applications

as light emitting diodes and photovoltaic devices. Recently, ZnO

has been placed on the indium tin oxide (ITO) electrodes and used

as an electron transport buffer layer (ETL) in organic solar cells

(OSCs) [1–3]. In order to improve device performance, the effects

of the amount of Al dopant [4], surface roughness [5], and the

nanostructure of Al-doped ZnO (AZO) [6] on the efﬁciency of OSCs

have been studied.

Annealing procedure is known to be critical for sol–gel AZO.

However, thermal expansion inevitably occurs in the ITO substrate

during the AZO annealing process. The crystal qualities and optical

properties of the AZO thin-ﬁlms are affected by the mismatched

thermal expansion coefﬁcients of ITO and AZO. Annealing also

increases the defect density on the surfaces of the AZO thin-ﬁlms

[7–8]. Defects containing hydroxyl groups are known to act as

electron charge defect traps, which not only affect the electrical

properties at the interface of the AZO and organic layers [9] but

also act as charge trap sites or recombination centers [10],inﬂu-

encing the photovoltaic performance of the organic devices.

Although the introduction of a homo-buffer layer and use of

gradient doping can improve AZO ﬁlm quality [11–12], studies on

the inﬂuence of gradient doping and homo-buffer layer on the

properties of organic photovoltaic devices have not been per-

formed. In this work, a gradient AZO multi-buffer layer (MBL) was

used in organic devices as the ETL for the ﬁrst time. Three kinds of

bistratal gradient AZO thin-ﬁlms of 0.5/1.0 at%(Al/Zn), 1.0/1.5 at%

(Al/Zn), and 1.5/2.0 at%(Al/Zn) layers, which were based on an

intrinsic ZnO buffer layer, were used as the ETLs of inverted OSCs.

These results indicated that MBLs are promising tools for im-

proving the photovoltaic performance of OSCs.

2. Experiments

A sol–gel solution was prepared by dissolving zinc acetate di-

hydrate (Zn(CH

COO)

 2H

O) and thanolamine (C

NO) in

ethanol. Aluminum nitrate (Al(NO

)

 9H

O) was used as an Al

source [13] with Al-to-Zn ratios (Al/Zn) of 0.5, 1.0, 1.5, and 2.0 at%.

After 24 h, the solution was spin-coated onto clean ITO substrates.

Samples were then annealed at 300 °C for 30 min to obtain ZnO

thin-ﬁlms. A ZnO/ZnO/ZnO reference layer, deﬁned as A, was also

fabricated. To prepare multilayered gradient AZO, the samples

were spin-coated with different AZO solutions with concentra-

tions of 0.5/1.0 at%, 1.0/1.5 at%, and 1.5/2.0 at% on ZnO buffer layers,

and these layers were deﬁned as B, C, and D, respectively.

An active layer consisting of a poly (3-hexylthiophene)(P3HT):

Contents lists available at ScienceDirect

journal homepage: www.elsevier.com/locate/matlet

Materials Letters

http://dx.doi.org/10.1016/j.matlet.2015.09.017

Corresponding author.

E-mail address: jjzhang@nankai.edu.cn (J. Zhang).

Contributed equally to this work.

Materials Letters 161 (2015) 624–627

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