bq24735
ZHCS444A –SEPTEMBER 2011–REVISED JANUARY 2013
www.ti.com.cn
ELECTRICAL CHARACTERISTICS (continued)
4.5 V ≤ V
VCC
≤ 24 V, 0°C ≤ T
J
≤ 125°C, typical values are at T
A
= 25°C, with respect to GND (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
INPUT OVER-CURRENT COMPARATOR (ACOC)
(2)
Adapter over current rising threshold with ChargeOption() bit [1] = 1 (Default) 300% 333% 366%
V
ACOC
respect to input current limit, voltage
ChargeOption() bit [1] = 0 Disable function
across input sense resistor rising edge
ChargeOption() Bit [1] = 1 (333%),
V
ACOC_min
Min ACOC threshold clamp voltage 40 45 50 mV
InputCurrent () = 0x0400H (10.24mV)
ChargeOption() Bit [1] = 1 (333%),
V
ACOC_max
Max ACOC threshold clamp voltage 135 150 165 mV
InputCurrent () = 0x1F80H (80.64mV)
Voltage across input sense resistor rising to disable
t
ACOC_DEG
ACOC deglitch time (Specified by design) 2.3 4.2 6.6 ms
charge
BAT OVER-VOLTAGE COMPARATOR (BAT_OVP)
V
OVP_RISE
Over voltage rising threshold as V
SRN
rising 103% 104% 106%
percentage of V
BAT_REG
V
OVP_FALL
Over voltage falling threshold as V
SRN
falling 102%
percentage of V
BAT_REG
CHARGE OVER-CURRENT COMPARATOR (CHG_OCP)
ChargeCurrent()=0x0xxxH 54 60 66 mV
Charge over current rising threshold,
V
OCP_RISE
measure voltage drop across current ChargeCurrent()=0x1000H – 0x17C0H 80 90 100 mV
sensing resistor
ChargeCurrent()=0x1800 H– 0x1FC0H 110 120 130 mV
CHARGE UNDER-CURRENT COMPARATOR (CHG_UCP)
V
UCP_FALL
Charge under-current falling threshold V
SRP
falling towards V
SRN
1 5 9 mV
LIGHT LOAD COMPARATOR (LIGHT_LOAD)
V
LL_FALL
Light load falling threshold 1.25 mV
Measure the voltage drop across current sensing
resistor
V
LL_RISE_HYST
Light load rising hysteresis 1.25 mV
BATTERY DEPLETION COMPARATOR (BAT_DEPL) [1]
ChargeOption() bit [12:11] = 00 55.53% 59.19% 63.5%
Battery depletion falling threshold,
ChargeOption() bit [12:11] = 01 58.68% 62.65% 67.5%
V
BATDEPL_FALL
percentage of voltage regulation limit, V
SRN
ChargeOption() bit [12:11] = 10 62.17% 66.55% 71.5%
falling
ChargeOption() bit [12:11] = 11 (Default) 66.06% 70.97% 77%
ChargeOption() bit [12:11] = 00 225 305 400 mV
ChargeOption() bit [12:11] = 01 240 325 430 mV
Battery depletion rising hysteresis, V
SRN
V
BATDEPL_RHYST
rising
ChargeOption() bit [12:11] = 10 255 345 450 mV
ChargeOption() bit [12:11] = 11 (Default) 280 370 490 mV
Battery Depletion Rising Deglitch Delay to turn off ACFET and turn on BATFET during
t
BATDEPL_RDEG
600 ms
(Specified by design) LEARN cycle
BATTERY LOWV COMPARATOR (BAT_LOWV)
V
BATLV_FALL
Battery LOWV falling threshold V
SRN
falling 2.4 2.5 2.6 V
V
BATLV_RHYST
Battery LOWV rising hysteresis V
SRN
rising 200 mV
I
BATLV
Battery LOWV charge current limit 10 mΩ current sensing resistor 0.5 A
THERMAL SHUTDOWN COMPARATOR (TSHUT)
T
SHUT
Thermal shutdown rising temperature Temperature rising 155 °C
T
SHUT_HYS
Thermal shutdown hysteresis, falling Temperature falling 20 °C
ILIM COMPARATOR
V
ILIM_FALL
ILIM as CE falling threshold V
ILIM
falling 60 75 90 mV
V
ILIM_RISE
ILIM as CE rising threshold V
ILIM
rising 90 105 120 mV
LOGIC INPUT (SDA, SCL)
V
IN_ LO
Input low threshold 0.8 V
V
IN_ HI
Input high threshold 2.1 V
I
IN_ LEAK
Input bias current V = 7 V –1 1 μA
LOGIC OUTPUT OPEN DRAIN (ACOK, SDA)
V
OUT_ LO
Output saturation voltage 5 mA drain current 500 mV
I
OUT_ LEAK
Leakage current V = 7 V –1 1 μA
(2) User can adjust threshold via SMBus ChargeOption() REG0x12.
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