TI DP83TC812R-Q1：符合100BASE-T1标准的汽车级以太网PHY

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TI-DP83TC812R-Q1是一款专为汽车电子应用设计的高性能以太网物理层（PHY）收发器，它遵循开放联盟（Open Alliance）和IEEE 802.3bt标准，支持100BASE-T1规范。这款器件在满足严格的安全和电磁兼容性要求的同时，提供了卓越的性能和可靠性。该器件的主要特点包括： 1. 标准合规性：它符合IEEE 802.3bw标准，确保了与100BASE-T1网络的无缝对接，并通过集成低通滤波器达到TC-10的合规要求，拥有极低的睡眠电流，小于20微安，有利于能源效率。 2. EMC兼容性：根据SAE J2962-3标准，DP83TC812R-Q1表现出出色的电磁兼容性，确保在各种电磁环境中稳定工作。 3. 电压配置灵活性：提供多种输入输出电压选项，如3.3V、2.5V和1.8V，适应不同系统的需求，同时还有一个独立的电压轨供MAC接口引脚使用。 4. 严格的汽车级认证：这款产品经过AEC-Q100认证，适用于严苛的汽车应用环境，如温度范围从-40°C到+125°C，以及对静电放电（ESD）防护的高标准，如±8-kV人体模型（HBM）和接触放电等级4的ESD保护。 5. 时间同步和网络服务质量：支持IEEE 1588时钟同步功能，以及符合TSN（Time-Sensitive Networking）规范，具备帧预emption能力，确保数据传输的实时性和准确性。 6. 低功耗设计：在待机状态下，功率消耗低至约230毫瓦，有助于延长电池寿命或降低总体系统能耗。 7. 诊断工具集：设备内置了丰富的诊断功能，如信号质量指示（SQI）、时域反射测量（TDR）、静电放电传感器、电压监控和内置伪随机二进制序列（PRBS）自测试，方便用户进行故障检测和维护。 8. 封装形式：采用VQFN湿可焊球封装，提供优良的散热和可靠性的优势，适合于汽车电子的严苛环境。 DP83TC812R-Q1的应用领域广泛，特别适合高级驾驶辅助系统（ADAS）、车辆网络的网关和车身控制单元，以及车载通信（Telematics）等场景，它作为连接车载系统的关键组件，能够确保高速、可靠的数据传输，满足现代汽车电子对性能、安全和能效的高要求。

7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)

(1)

MIN TYP MAX UNIT

Input Voltage VDDA –0.3 4 V

Input Voltage VDDIO/VDDMAC (3.3V) –0.3 4 V

Input Voltage VDDIO/VDDMAC (2.5V) –0.3 4 V

Input Voltage VDDIO/VDDMAC (1.8V) –0.3 4 V

Input Voltage VSLEEP -0.3 4 V

Pins MDI –0.3 4 V

Pins MAC interface –0.3

VDDMAC +

0.3

Pins MDIO, MDC, GPIO, XI, XO, INT, RESET, CLKOUT –0.3 VDDIO + 0.3 V

Pins WAKE, INH –0.3

VSLEEP +

0.3

DC Output

Voltage

All Pins –0.3 4 V

Junction Temperature 150 °C

stg

Storage temperature –65 150 °C

(1) Stresses beyond those listed under Absolute Maximum Rating may cause permanent damage to the device. These are stress

ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated

under Recommended Operating Condition. Exposure to absolute-maximum-rated conditions for extended periods may affect device

reliability.

7.2 ESD Ratings

VALUE UNIT

(ESD)

Electrostatic discharge

Human body model (HBM), per

AEC Q100-002

(1)

All pins ±2000

TRD_N, TRD_P pins ±8000

Charged device model (CDM), per

AEC Q100-011

Corner pins ±750

Other pins ±750

IEC 61000-4-2 contact discharge TRD_N, TRD_P pins ±8000

(1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN NOM MAX UNIT

VDDIO /

VDDMAC

IO Supply Voltage, 1.8V operation 1.62 1.8 1.98

VIO Supply Voltage, 2.5V operation 2.25 2.5 2.75

IO Supply Voltage, 3.3V operation 2.97 3.3 3.63

VDDA Core Supply Voltage, 3.3V 2.97 3.3 3.63 V

VSLEEP Sleep Supply Voltage, 3.3V 2.97 3.3 3.63 V

Ambient temperature –40 125 °C

DP83TC812S-Q1, DP83TC812R-Q1

SNLS654A – APRIL 2021 – REVISED DECEMBER 2021

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Product Folder Links: DP83TC812S-Q1 DP83TC812R-Q1

7.4 Thermal Information

THERMAL METRIC

(1)

DP83TC812

UNITRHA (VQFN)

36 PINS

θJA

Junction-to-ambient thermal resistance 36.7 °C/W

θJC(top)

Junction-to-case (top) thermal resistance 27.0 °C/W

θJB

Junction-to-board thermal resistance 17.5 °C/W

Junction-to-top characterization parameter 0.7 °C/W

Junction-to-board characterization parameter 17.5 °C/W

θJC(bot)

Junction-to-case (bottom) thermal resistance 6.7 °C/W

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

7.5 Electrical Characteristics

over operating free-air temperature range (unless otherwise noted)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

100BASE-T1 PMA CONFORMANCE

OD-MDI

Output Differential

Voltage

L(diff)

= 100Ω 2.2 V

MDI-Diff

Integrated Differential

Output Termination

TRD_P and TRD_M 100 Ω

BOOTSTRAP DC CHARACTERISTICS (2 Level)

MODE1

Mode 1 Strap Voltage

Range

VDDIO = 3.3V ±10%, 2-level strap 0 0.8 V

MODE2

Mode 2 Strap Voltage

Range

VDDIO = 3.3V ±10%, 2-level strap 2 VDDIO V

MODE1

Mode 1 Strap Voltage

Range

VDDIO = 2.5V ±10%, 2-level strap 0 0.7 V

MODE2

Mode 2 Strap Voltage

Range

VDDIO = 2.5V ±10%, 2-level strap 1.5 VDDIO V

MODE1

Mode 1 Strap Voltage

Range

VDDIO = 1.8V ±10%, 2-level strap 0

0.35 x

VDDIO

MODE2

Mode 2 Strap Voltage

Range

VDDIO = 1.8V ±10%, 2-level strap

0.65 x

VDDIO

VDDIO V

BOOTSTRAP DC CHARACTERISTICS (3 Level)

MODE1

Mode 1 Strap Voltage

Range

VDDIO = 3.3V ±10%, 3-level strap 0

0.18 x

VDDIO

MODE2

Mode 2 Strap Voltage

Range

VDDIO = 3.3V ±10%, 3-level strap

0.22 x

VDDIO

0.42 x

VDDIO

MODE3

Mode 3 Strap Voltage

Range

VDDIO = 3.3V ±10%, 3-level strap

0.46 x

VDDIO

VDDIO V

MODE1

Mode 1 Strap Voltage

Range

VDDIO = 2.5V ±10%, 3-level strap 0

0.19 x

VDDIO

MODE2

Mode 2 Strap Voltage

Range

VDDIO = 2.5V ±10%, 3-level strap

0.27 x

VDDIO

0.41 x

VDDIO

MODE3

Mode 3 Strap Voltage

Range

VDDIO = 2.5V ±10%, 3-level strap

0.58 x

VDDIO

VDDIO V

MODE1

Mode 1 Strap Voltage

Range

VDDIO = 1.8V ±10%, 3-level strap 0

0.35 x

VDDIO

MODE2

Mode 2 Strap Voltage

Range

VDDIO = 1.8V ±10%, 3-level strap

0.40 x

VDDIO

0.75 x

VDDIO

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DP83TC812S-Q1, DP83TC812R-Q1

SNLS654A – APRIL 2021 – REVISED DECEMBER 2021

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Product Folder Links: DP83TC812S-Q1 DP83TC812R-Q1

7.5 Electrical Characteristics (continued)

over operating free-air temperature range (unless otherwise noted)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

MODE3

Mode 3 Strap Voltage

Range

VDDIO = 1.8V ±10%, 3-level strap

0.84 x

VDDIO

VDDIO V

IO CHARACTERISTICS

High Level Input

Voltage

VDDIO = 3.3V ±10% 2 V

Low Level Input

Voltage

VDDIO = 3.3V ±10% 0.8 V

High Level Output

Voltage

= -2mA, VDDIO = 3.3V ±10% 2.4 V

Low Level Output

Voltage

= 2mA, VDDIO = 3.3V ±10% 0.4 V

High Level Input

Voltage

VDDIO = 2.5V ±10% 1.7 V

Low Level Input

Voltage

VDDIO = 2.5V ±10% 0.7 V

High Level Output

Voltage

= -2mA, VDDIO = 2.5V ±10% 2 V

Low Level Output

Voltage

= 2mA, VDDIO = 2.5V ±10% 0.4 V

High Level Input

Voltage

VDDIO = 1.8V ±10%

0.65*VDDI

Low Level Input

Voltage

VDDIO = 1.8V ±10%

0.35*VDDI

High Level Output

Voltage

= -2mA, VDDIO = 1.8V ±10%

VDDIO-0.

Low Level Output

Voltage

= 2mA, VDDIO = 1.8V ±10% 0.45 V

Input High Current

(1)

= -40℃ to 125℃, VIN=VDDIO, All pins

except XI and WAKE

-10 10 µA

IH-XI

Input High Current

(1)

= -40℃ to 125℃, VIN=VDDIO, XI pin -15 15 µA

IL-XI

Input Low Current

(1)

= -40℃ to 125℃, VIN=GND, XI pin -15 15 µA

Input Low Current

(1)

= -40℃ to 125℃, VIN=GND, All pins except

XI pin

-10 10 µA

Iozh

Tri-state Output High

Current

(2)

= -40℃ to 125℃, VIN=VDDIO, All pins

except RX_CTRL and RX_ER

-10 10 µA

Iozh

Tri-state Output High

Current

(2)

= -40℃ to 125℃, VIN=VDDIO, RX_CTRL

and RX_ER

-52 52 µA

Iozl

Tri-state Output Low

Current

(2)

= -40℃ to 125℃, VOUT=GND -10 10 µA

pulldn

Internal Pull Down

Resistor

RX_D[3:0], RX_CLK, LED_0, LED_1 6.2 8.4 10.7 kΩ

pulldn

Internal Pull Down

Resistor

RX_CTRL, RX_ER 4.725 5.8 7.2 kΩ

pulldn

Internal Pull Down

Resistor

WAKE 455 kΩ

pullup

Internal Pull Up

Resistor

INT, RESET 6.3 9 11.2 kΩ

XI V

High Level Input

Voltage

1.3 VDDIO V

XI V

Low Level Input

Voltage

0.5 V

Input Capacitance XI 1 pF

DP83TC812S-Q1, DP83TC812R-Q1

SNLS654A – APRIL 2021 – REVISED DECEMBER 2021

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7.5 Electrical Characteristics (continued)

over operating free-air temperature range (unless otherwise noted)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

Input Capacitance

INPUT PINS

5 pF

OUT

Output Capacitance

1 pF

OUT

Output Capacitance

OUTPUT PINS

5 pF

series

Integrated MAC Series

Termination Resistor

RX_D[3:0], RX_ER, RX_DV, RX_CLK 35 50 65 Ω

POWER CONSUMPTION

I(3V3) MII -40℃ to 125℃ 57 63 mA

I(3V3) RMII -40℃ to 125℃ 57 63 mA

I(3V3) RGMII -40℃ to 125℃ 57 63 mA

I(3V3) SGMII -40℃ to 125℃ 81 95 mA

I(VDDIO=3.3V) MII -40℃ to 125℃, VDDIO = VDDMAC 19 24 mA

I(VDDIO=3.3V) RMII -40℃ to 125℃, VDDIO = VDDMAC 18 23 mA

I(VDDIO=3.3V) RGMII -40℃ to 125℃, VDDIO = VDDMAC 13 21 mA

I(VDDIO=3.3V) SGMII -40℃ to 125℃, VDDIO = VDDMAC 7 12 mA

I(VDDIO=2.5V) MII -40℃ to 125℃, VDDIO = VDDMAC 12 18 mA

I(VDDIO=2.5V) RMII -40℃ to 125℃, VDDIO = VDDMAC 12 17 mA

I(VDDIO=2.5V) RGMII -40℃ to 125℃, VDDIO = VDDMAC 12 16 mA

I(VDDIO=2.5V) SGMII -40℃ to 125℃, VDDIO = VDDMAC 6 9 mA

I(VDDIO=1.8V) MII -40℃ to 125℃, VDDIO = VDDMAC 9 13 mA

I(VDDIO=1.8V) RMII -40℃ to 125℃, VDDIO = VDDMAC 9 13 mA

I(VDDIO=1.8V) RGMII -40℃ to 125℃, VDDIO = VDDMAC 9 12 mA

I(VDDIO=1.8V) SGMII -40℃ to 125℃, VDDIO = VDDMAC 4 6 mA

POWER CONSUMPTION (LOW POWER MODE)

I(VDDA3V3) IEEE Power Down -40℃ to 125℃, All interfaces 8 22 mA

I(VDDA3V3) TC-10 Sleep -40℃ to 125℃, All interfaces 30 50 mA

I(VDDA3V3) RESET -40℃ to 125℃, All interfaces 9 23 mA

I(VDDA3V3) Standby -40℃ to 125℃, MII 15 33 mA

I(VDDA3V3) Standby -40℃ to 125℃, RMII 15 30 mA

I(VDDA3V3) Standby -40℃ to 125℃, RGMII 15 30 mA

I(VDDA3V3) Standby -40℃ to 125℃, SGMII 15 30 mA

I(VDDIO=3.3V) IEEE Power Down

-40℃ to 125℃, All interfaces,

VDDIO=VDDMAC

15 23 mA

I(VDDIO=3.3V) TC-10 Sleep

-40℃ to 125℃, All interfaces,

VDDIO=VDDMAC

15 23 mA

I(VDDIO=3.3V) RESET

-40℃ to 125℃, All interfaces,

VDDIO=VDDMAC

15 23 mA

I(VDDIO=3.3V) Standby -40℃ to 125℃, MII, VDDIO=VDDMAC 19 25 mA

I(VDDIO=3.3V) Standby -40℃ to 125℃, RMII, VDDIO=VDDMAC 16 20 mA

I(VDDIO=3.3V) Standby -40℃ to 125℃, RGMII, VDDIO=VDDMAC 14 20 mA

I(VDDIO=3.3V) Standby -40℃ to 125℃, SGMII, VDDIO=VDDMAC 14 16 mA

I(VDDIO=2.5V) IEEE Power Down

-40℃ to 125℃, All interfaces,

VDDIO=VDDMAC

10 16 mA

I(VDDIO=2.5V) TC-10 Sleep

-40℃ to 125℃, All interfaces,

VDDIO=VDDMAC

10 16 mA

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DP83TC812S-Q1, DP83TC812R-Q1

SNLS654A – APRIL 2021 – REVISED DECEMBER 2021

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