英文版Star-HSPICE使用手册

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"HSPICE使用手册.PDF" 是一份关于HSPICE仿真软件的英文使用指南，由Avant! Corporation出版，版本为1999.2，发布于1999年6月。该手册可能包含对HSPICE软件的详细解释、操作步骤、功能介绍以及可能的更新和变更信息。 HSPICE（High Speed SPICE）是高级半导体参数模拟器（High-Speed SPICE）的简称，是一款广泛应用于电子电路模拟和分析的工具。它基于SPICE（Simulation Program with Integrated Circuit Emphasis）基础，但具有更高的计算速度和更精确的模型支持，尤其适用于高速、高性能的集成电路设计。HSPICE能够模拟复杂电路的行为，帮助工程师在设计早期阶段预测和验证电路性能。手册中可能涵盖了以下关键知识点： 1. **基本概念**：包括SPICE的基础知识，如节点分析法、电路方程的建立、模拟过程等。 2. **命令与语法**：详细介绍了HSPICE中的输入文件格式，包括电路元素定义、模型参数设置、模拟控制命令等。 3. **电路模型**：涵盖了大量的半导体器件模型，如BJT、MOSFET、二极管、电容、电感等，以及高级模型如热效应、噪声分析等。 4. **模拟类型**：包括直流工作点分析、交流分析、瞬态分析、频率响应分析等多种模拟类型，每种分析类型的设定和结果解析。 5. **优化与参数扫描**：如何进行电路参数的优化和扫描，以寻找最佳设计点或评估参数变化的影响。 6. **报告与后处理**：输出结果的格式、报告生成、图形化显示，以及如何解读模拟结果。 7. **错误处理与调试**：如何解决在使用过程中遇到的问题，包括错误代码的含义和调试方法。 8. **应用实例**：可能提供实际电路设计案例，演示如何使用HSPICE进行电路仿真和问题排查。 9. **版本更新**：1999.2版本可能包含了对旧版本的改进和新增特性，这些更新通常会提升软件的性能和功能。请注意，由于是英文版的手册，对于不熟悉英文的专业术语可能会有一定阅读难度。使用时建议配合相关中文教程或翻译工具，以便更好地理解和应用HSPICE。此外，尽管手册中可能声明了Avant! Corporation对于产品的变更、适用性、保修和责任等方面的免责声明，但这并不减少其作为学习和参考的重要价值。

Contents

xvi Star-Hspice Manual, Release 1999.2

Performing Worst Case Analysis .................................................................12-8

Model Skew Parameters.......................................................................... 12-8

Performing Monte Carlo Analysis .............................................................12-14

Monte Carlo Setup ................................................................................ 12-14

Monte Carlo Output .............................................................................. 12-15

.PARAM Distribution Function Syntax................................................ 12-16

Monte Carlo Parameter Distribution Summary .................................... 12-18

Monte Carlo Examples.......................................................................... 12-18

Worst Case and Monte Carlo Sweep Example ..........................................12-28

HSPICE Input File ................................................................................ 12-28

Transient Sigma Sweep Results............................................................ 12-30

Monte Carlo Results.............................................................................. 12-32

Optimization ...............................................................................................12-37

Optimization Control............................................................................. 12-38

Simulation Accuracy............................................................................. 12-38

Curve Fit Optimization.......................................................................... 12-39

Goal Optimization................................................................................. 12-39

Performing Timing Analysis................................................................. 12-39

Understanding the Optimization Syntax ............................................... 12-40

Optimization Examples ..............................................................................12-46

MOS Level 3 Model DC Optimization................................................. 12-46

MOS Level 13 Model DC Optimization............................................... 12-50

RC Network Optimization .................................................................... 12-52

CMOS Tristate Buffer Optimization..................................................... 12-57

BJT S-Parameters Optimization............................................................ 12-62

BJT Model DC Optimization................................................................ 12-65

GaAsFET Model DC Optimization....................................................... 12-69

MOS Op-amp Optimization.................................................................. 12-72

Chapter 13 - Using Passive Device Models ...................................................13-1

Resistor Device Model and Equations .........................................................13-2

Contents

Star-Hspice Manual, Release 1999.2 xvii

Wire RC Model....................................................................................... 13-2

Resistor Model Equations ....................................................................... 13-5

Capacitor Device Model and Equations .......................................................13-9

Capacitance Model.................................................................................. 13-9

Capacitor Device Equations.................................................................. 13-11

Inductor Device Model and Equations .......................................................13-13

Inductor Core Models............................................................................ 13-13

Magnetic Core Element Outputs........................................................... 13-18

Inductor Device Equations.................................................................... 13-18

Jiles-Atherton Ferromagnetic Core Model............................................ 13-20

Chapter 14 - Using Diodes .............................................................................14-1

Understanding the Diode Types ...................................................................14-2

Using Diode Model Statements ...................................................................14-3

Setting Control Options........................................................................... 14-3

Specifying Junction Diode Models ..............................................................14-5

Using the Junction Model Statement ...................................................... 14-5

Using Junction Model Parameters........................................................... 14-7

Providing Geometric Scaling for Diode Models................................... 14-13

Defining Diode Models......................................................................... 14-15

Determining Temperature Effects on Junction Diodes......................... 14-18

Using Junction Diode Equations ................................................................14-21

Using Junction DC Equations ............................................................... 14-22

Using Diode Capacitance Equations..................................................... 14-24

Using Noise Equations.......................................................................... 14-27

Temperature Compensation Equations ................................................. 14-27

Using the Fowler-Nordheim Diode ............................................................14-32

Converting National Semiconductor Models .............................................14-34

Chapter 15 - Using BJT Models ....................................................................15-1

Contents

xviii Star-Hspice Manual, Release 1999.2

Using BJT Models .......................................................................................15-2

Selecting Models..................................................................................... 15-2

Understanding the BJT Model Statement ....................................................15-4

Using BJT Basic Model Parameters........................................................ 15-5

Handling BJT Model Temperature Effects........................................... 15-15

Using BJT Device Equivalent Circuits ......................................................15-21

Scaling................................................................................................... 15-21

Understanding the BJT Current Convention......................................... 15-21

Using BJT Equivalent Circuits.............................................................. 15-22

Using BJT Model Equations (NPN and PNP) ...........................................15-32

Understanding Transistor Geometry in Substrate Diodes..................... 15-32

Using DC Model Equations .................................................................. 15-33

Using Substrate Current Equations ....................................................... 15-35

Using Base Charge Equations............................................................... 15-35

Using Variable Base Resistance Equations........................................... 15-36

Using BJT Capacitance Equations .............................................................15-37

Using Base-Emitter Capacitance Equations.......................................... 15-37

Determining Base Collector Capacitance ............................................. 15-39

Using Substrate Capacitance................................................................. 15-41

Defining BJT Noise Equations ..................................................................15-44

Using BJT Temperature Compensation Equations ....................................15-46

Using Energy Gap Temperature Equations........................................... 15-46

Using Saturation and Beta Temperature Equations,

TLEV=0 or 2............................................................................... 15-46

Using Saturation and Temperature Equations, TLEV=1 ...................... 15-48

Using Saturation Temperature Equations, TLEV=3............................. 15-49

Using Capacitance Temperature Equations .......................................... 15-50

Using Parasitic Resistor Temperature Equations.................................. 15-53

Using BJT LEVEL=2 Temperature Equations ..................................... 15-53

Using the BJT Quasi-Saturation Model .....................................................15-54

Contents

Star-Hspice Manual, Release 1999.2 xix

Using Epitaxial Current Source Iepi ..................................................... 15-56

Using Epitaxial Charge Storage Elements Ci and Cx........................... 15-56

Converting National Semiconductor Models .............................................15-59

Using the VBIC Bipolar Transistor Model ................................................15-61

Understanding the History of VBIC...................................................... 15-61

VBIC Equations .................................................................................... 15-62

Noise Analysis....................................................................................... 15-63

Notes on Using VBIC ........................................................................... 15-68

Chapter 16 - Using JFET and MESFET Models .........................................16-1

Understanding JFETS ..................................................................................16-2

Specifying a Model ......................................................................................16-3

Understanding the Capacitor Model ............................................................16-5

Model Applications................................................................................. 16-5

Control Options....................................................................................... 16-6

Using JFET and MESFET Equivalent Circuits ...........................................16-8

Scaling..................................................................................................... 16-8

Understanding JFET Current Convention............................................... 16-8

JFET Equivalent Circuits ........................................................................ 16-9

Using JFET and MESFET Model Statements ...........................................16-14

JFET and MESFET Model Parameters................................................. 16-14

Gate Diode DC Parameters ................................................................... 16-16

JFET and MESFET Capacitances......................................................... 16-26

Capacitance Comparison (CAPOP=1 and CAPOP=2)......................... 16-30

JFET and MESFET DC Equations........................................................ 16-32

JFET and MESFET Noise Models .............................................................16-36

Noise Parameters .................................................................................. 16-36

Noise Equations..................................................................................... 16-36

Noise Summary Printout Definitions.................................................... 16-38

JFET and MESFET Temperature Equations .............................................16-39

Contents

xx Star-Hspice Manual, Release 1999.2

Temperature Compensation Equations ................................................. 16-42

Using TriQuint Model (TOM) Extensions to Level=3 ..............................16-46

TOM Model Parameters........................................................................ 16-47

Chapter 17 - Introducing MOSFETs ............................................................17-1

Understanding MOSFET Models ................................................................17-3

Selecting Models ..........................................................................................17-4

Selecting MOSFET Model Levels.......................................................... 17-4

Selecting MOSFET Capacitors............................................................... 17-7

Selecting MOS Diodes........................................................................... 17-8

Setting MOSFET Control Options........................................................ 17-11

Using the General MOSFET Model Statement .........................................17-14

Using Nonplanar and Planar Technologies ................................................17-15

Using Field Effect Transistors............................................................... 17-15

Using MOSFET Equivalent Circuits .........................................................17-21

Using a MOSFET Diode Model ................................................................17-27

Selecting MOSFET Diode Models ....................................................... 17-27

Enhancing Convergence........................................................................ 17-27

Using MOSFET Diode Model Parameters............................................ 17-28

Using Capacitance Model Parameters................................................... 17-28

Using an ACM=0 MOS Diode.............................................................. 17-31

Using an ACM=1 MOS Diode.............................................................. 17-35

Using an ACM=2 MOS Diode.............................................................. 17-38

Using an ACM = 3 MOS Diode............................................................ 17-43

Using MOS Diode Equations .....................................................................17-46

DC Current............................................................................................ 17-46

Using MOS Diode Capacitance Equations ........................................... 17-47

Using Common Threshold Voltage Equations ..........................................17-51

Common Threshold Voltage Parameters .............................................. 17-51

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