厘米级透明MoS2等离子体光电探测器：分离牛眼结构增强性能

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"分离牛眼结构的大型透明二硫化钼等离子光电探测器" 本文报道了一种基于大型透明二硫化钼(MoS2)的等离子光电探测器，利用了化学气相沉积(CVD)技术在厘米级透明氧化铝(Al2O3)衬底上直接生长MoS2。这一创新方法旨在为可见光波长范围内的下一代成像技术提供高性能的光电探测器阵列。MoS2作为一种二维材料，因其独特的光电特性以及在单层状态下的透明性，使其成为这类应用的理想选择。文章中提到的等离子体MoS2探测器采用了铝裂牛眼(Split Bull Eye, SBE)结构，这种结构能利用表面等离子体共振(SPR)效应显著提升性能。在405纳米波长下，该探测器实现了约6.2×10^-14 W Hz^-1/2的超低噪声等效功率，同时在1.0 V的小偏置电压下获得了7.26 AW^-1的高响应度，比没有使用SBE结构的参考探测器性能提升了六倍。时间域有限差分(FDTD)仿真结果显示，SBE结构中心的光场分布更加集中，这增强了光电流和灵敏度，尤其是在低光照条件下。 MoS2的带隙随着厚度从单层到多层的变化，可以覆盖从紫外到近红外的光谱范围，因此它在光探测器和光晶体管中有广泛应用。除了机械剥离MoS2的传统方法，已经有许多技术被用于合成高质量的MoS2薄膜，包括稀释水溶液法、液体剥离法、物理气相沉积、溅射法、胶体量子点异质结以及最近的CVD法。通过CVD进行晶圆级外延生长的MoS2也被报道，这种方法能生长出均匀的大面积MoS2薄膜，非常适合展示大规模的光电探测器阵列。这篇研究展示了通过优化的CVD生长技术和集成SBE等离子体结构，如何有效地提升MoS2光电探测器的性能，这对于未来透明、大面积的光电设备和成像技术的发展具有重要意义。

FULL PAPER

1800461 (1 of 7)

2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

www.advopticalmat.de

Large-Scale Transparent Molybdenum Disulﬁde Plasmonic

Photodetector Using Split Bull Eye Structure

Adhikary Sourav, Zhiwen Li, Zhonghui Huang, Venkata Divakar Botcha, Cong Hu,

Jin-Ping Ao, Yangfan Peng, Hao-Chung Kuo, Jing Wu, Xinke Liu,* and Kah-Wee Ang*

DOI: 10.1002/adom.201800461

for use in photodetector and phototran-

sistor.

[4,5]

The band gap of MoS

varies

from 1.2 to 1.8 eV when the thickness

is scaled from bulk to single layer, which

allows optical detection from ultraviolet

to near-infrared wavelength regime. Apart

from mechanical exfoliation of MoS

using

scotch tape,

[4]

various techniques have

been reported to synthesize high-quality

MoS

ﬁlms which include dilute aqueous

solution,

[6]

liquid exfoliation,

[7]

physical

vapor deposition,

[8]

sputtering,

[9]

colloidal

MoS

quantum dot heterojunctions,

[10]

and

more recently chemical vapor deposition

(CVD).

[11–13]

Wafer scale epitaxy growth

of MoS

was also reported using CVD,

[14]

where homogenous large-scale MoS

ﬁlms

can be grown which is suitable to demon-

strate an array of detector and subsequently

realize an imager. However, it is very chal-

lenging to grow high-quality, uniform, and

defect-free MoS

ﬁlm via CVD technique.

To achieve detector array with superior performance for next-

generation imaging application, the use of high-quality material

was not the only solution. Apart from growth engineering, it is

also important to consider different device design to push the

performance to the next level. Use of plasmonic nanostructures

is deemed promising to increase optical absorption by coupling

with the incident light at the wavelength of surface plasmon res-

onance for enhancing the overall device performance. To date,

various plasmonic structures have been explored to enhance the

performance of MoS

photodetector/phototransistor.

[15–18]

Plas-

monic nanostructures were also employed in MoS

-graphene

heterostructures.

[19]

Hybrid 2D/3D MoS

nanocrystal on Si plat-

form with superior junction characteristics were reported by

Mukherjee et al.

[20]

Miao et al. reported few layer MoS

photo-

transistor with Au nanostructure array operating at 532 nm

wavelength.

[21]

Recently, Li et al. reported plasmonic photo-

detector operating in between 300 and 800 nm by using Au @

MoS

core shell heterostructure which achieved a high respon-

sivity value of 22.3 A W

−1

[22]

However, full detector characteriza-

tion including noise and detectivity has yet to be reported, which

are critical metrics for the imaging system. Moreover, most

reports are employing gold (Au) and silver (Ag) as the two

widely used plasmonic metals, which are incompatible mate-

rials with the mainstream complementary metal-oxide-semi-

conductor (CMOS) manufacturing technology. Apart from Au

and Ag, aluminum (Al) has been reported as a viable plasmonic

metal for its useful range in the visible wavelengths.

[23]

A high performance photodetector array on transparent substrate is highly

sought after for enabling next-generation imaging technology at the visible wave-

lengths. 2D materials such as molybdenum disulﬁde (MoS

) are attractive for

such application owing to its superior optoelectronic properties and transparency

when scaled to atomic thinness. Here, direct growth of MoS

on centimeter-scale

transparent Al

substrate is reported using a high yield and scalable chemical

vapor deposition approach. This enables a large area photodetector array to be

demonstrated, wherein aluminum split bull eye (SBE) plasmonic structure is inte-

grated to achieve further performance boost due to surface plasmon resonance

(SPR) effect. For a wavelength of 405 nm, the plasmonic MoS

detector achieves

an ultralow noise equivalent power of ≈6.2 × 10

–14

W Hz

−1/2

and a high respon-

sivity of 7.26 A W

−1

at a small bias of 1.0 V, which is more than 6× larger than the

reference detector due to SPR effect. Finite-difference time-domain simulation

conﬁrms a higher concentration of optical ﬁeld distribution at the center of the

SBE structure, which is responsible for the enhancement of photocurrent and

sensitivity even at low-light condition.

Dr. A. Sourav, Prof. K.-W. Ang

Electrical and Computer Engineering

National University of Singapore

21 Lower Kent Ridge Road, Singapore 117576, Singapore

E-mail: eleakw@nus.edu.sg

Z. Li, Z. Huang, Dr. V. D. Botcha, C. Hu, Prof. J.-P. Ao, Y. Peng, Dr. X. Liu

College of Materials Science and Engineering

Shenzhen University

3688 Nanhai Ave, Shenzhen 518060, P. R. China

E-mail: xkliu@szu.edu.cn

Prof. H.-C. Kuo

Department of Photonics and Institute of Electro-Optical Engineering

National Chiao Tung University

Hsinchu 300, Taiwan

Dr. J. Wu

Institute of Materials research and Engineering (IMRE)

Singapore 138634, Singapore

Plasmonic Photodetectors

1. Int roduction

In recent years, molybdenum disulﬁde (MoS

) emerges as a key

member in 2D transition metal dichalcogenide family which

has attracted increasing interests for numerous applications in

the ﬁeld of nanoelectronics, environment studies, sensing, bio-

medical engineering, and etc.

[1–3]

By virtue of its direct band gap

property, multilayer and monolayer MoS

are promising material

Adv. Optical Mater. 2018, 1800461

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