7.6 Electrical Characteristics (continued)
parameters valid across -40℃ ≤ T
A
≤ 125℃ (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
V
OL
LIN dominant low-level output voltage
(3)
TXD = low, 7 V ≤ V
SUP
≤ 48 V 0.2 V
SUP
V
OL
LIN dominant low-level output voltage
(1)
(2)
TXD = low, 7 V ≤ V
SUP
≤ 18 V 0.2 V
SUP
V
OL
LIN dominant low-level output voltage
(3)
TXD = low, 4 V ≤ V
SUP
< 7 V 1.2 V
V
SUP_NON_OP
V
SUP
where impact of recessive LIN bus
< 5% (ISO/DIS 17987 Param 11)
TXD & RXD open, LIN = 4 V to 58 V –0.3 58 V
I
BUS_LIM
Limiting current (ISO/DIS 17987 Param
57)
TXD = 0 V, V
LIN
= 48 V, R
MEAS
= 440 Ω,
V
SUP
= 48 V, V
BUSdom
< 4.518 V
75 120 300 mA
I
BUS_PAS_dom
Receiver leakage current, dominant
(ISO/DIS 17987 Param 13)
LIN = 0 V, V
SUP
= 24 V Driver off/
recessive; See Figure 8-6
–2 mA
I
BUS_PAS_rec1
Receiver leakage current, recessive
(ISO/DIS 17987 Param 14)
LIN > V
SUP
, 8 V ≤ V
SUP
≤ 48 V, Driver
off; See Figure 8-7
20 µA
I
BUS_PAS_rec2
Receiver leakage current, recessive
(ISO/DIS 17987 Param 14)
LIN = V
SUP
, Driver off; See Figure 8-7 –5 5 µA
I
BUS_NO_GND
Leakage current, loss of ground
(ISO/DIS 17987 Param 60)
GND = V
SUP
, 0 V ≤ V
LIN
< 36 V, V
SUP
=
24 V; Figure 8-8
–2 2 mA
I
leak gnd(dom)
Leakage current, loss of ground
(5)
V
SUP
= 8 V, GND = open, V
SUP
= 18 V,
GND = open
R
Commander
= 1 kΩ, C
L
= 1 nF
R
Responder
= 20 kΩ, C
L
= 1 nF
LIN = dominant
–1 1 mA
I
leak gnd(rec)
Leakage current, loss of ground
(5)
V
SUP
= 8 V, GND = open, V
SUP
= 18 V,
GND = open
R
Commander
= 1 kΩ, C
L
= 1 nF
R
Responder
= 20 kΩ, C
L
= 1 nF
LIN = recessive
-100 100 µA
I
BUS_NO_BAT
Leakage current, loss of supply
(ISO/DIS 17987 Param 61)
0 V ≤ V
LIN
≤ 48 V, V
SUP
= GND;
See; Figure 8-9
5 µA
V
BUSdom
Low level input voltage (ISO/DIS 17987
Param 62)
(3)
LIN dominant (including LIN dominant
for wake-up); See Figure 8-4 and Figure
8-3
0.4 V
SUP
V
BUSrec
High level input voltage (ISO/DIS 17987
Param 63)
(3)
LIN recessive; See Figure 8-4 and
Figure 8-3
0.6 V
SUP
V
IH
LIN recessive high-level input voltage
(1)
(2)
7 V ≤ V
SUP
≤ 18 V 0.47 0.6 V
SUP
V
IL
LIN dominant low-level input voltage
(1)
(2)
7 V ≤ V
SUP
≤ 18 V 0.4 0.53 V
SUP
V
BUS_CNT
Receiver center threshold (ISO/DIS
17987 Param 64)
V
BUS_CNT
= (V
BUSdom
+ V
BUSrec
)/2 See
Figure 8-4 and Figure 8-3
0.475 0.5 0.525 V
SUP
V
HYS
Hysteresis voltage (ISO/DIS 17987
Param 65)
V
HYS
= (V
BUSrec
- V
BUSdom
) See Figure
8-4 and Figure 8-3
0.175 V
SUP
V
HYS
Hysteresis voltage (SAE J2602)
V
HYS
= V
IH
- V
IL
See Figure 8-4 and
Figure 8-3
0.07 0.175 V
SUP
V
SERIAL_DIODE
Serial diode LIN termination pullup path I
SERIAL_DIODE
= 10 μA 0.4 0.7 1 V
R
PU
Pullup resistor to V
SUP
(ISO/DIS 17987
Param 26)
Normal and Standby modes 20 45 60 kΩ
I
RSLEEP
Pullup current source to V
SUP
Sleep mode, V
SUP
= 27 V, LIN = GND –20 –2 µA
C
LINPIN
Capacitance of the LIN pin V
SUP
= 14 V 25 pF
(1) SAE 2602 commander node load conditions: 5.5 nF/4 kΩ and 899 pF/20 kΩ
(2) SAE 2602 responder node load conditions: 5.5 nF/875 Ω and 899 pF/900 Ω
(3) ISO 17987 bus load conditions (C
LINBUS
, R
LINBUS
) include 1 nF/1 kΩ; 6.8 nF/660 Ω; 10 nF/500 Ω.
(4) RXD uses open drain output structure therefore V
OL
level is based upon microcontroller supply voltage V
CC
.
(5) I
leak gnd
= (V
BAT
- V
LIN
)/R
Load
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