MOCVD生长的高应变InGaAs/GaAs量子阱的光学特性研究

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本文主要探讨了通过低压金属有机化学气相沉积（LP-MOCVD）技术生长的高应变InGaAs/GaAs量子阱（QWs）的光学性质研究。量子阱作为光电子和微电子器件中的关键结构，因其在通信领域的大范围发射波长和潜在应用而受到广泛关注。特别是高应变的InGaAs/GaAs结构激光二极管，由于其表现出的优良性能，已成为研究热点。文章详细地分析了生长温度、V/III比和生长速率对量子阱光学特性的影响。研究发现，生长温度和V/III比对峰值波长和发光强度有显著影响。随着生长温度的升高，可能有利于形成更高质量的量子阱，从而提高PL强度。然而，过高的温度可能会导致材料缺陷，影响光学性能。V/III比，即砷源与镓源的比例，对于形成均匀且稳定的量子阱层至关重要，合适的比例有助于优化电子和空穴复合效率，从而增强PL信号。 Kim等人利用MOCVD方法制备的InGaAs/GaAs应变型多量子阱（MQWs）示例表明，MQW的PL峰可以通过光电流和PL光谱进行识别，这些峰对应于电子-重空穴和电子-轻空穴的基本激子跃迁。有趣的是，一项关于不同温度下生长的InGaAs/GaAs/AlGaAs量子阱的研究指出，在640°C条件下生长的量子阱显示出最高的PL强度，这提示了优化生长条件的重要性。总结来说，通过精细调控MOCVD生长参数，可以有效地控制InGaAs/GaAs量子阱的质量，进而优化其光学性能，这对于开发高效、宽谱的光电子设备具有重要意义。这项研究不仅为量子阱器件的设计提供了有价值的指导，也为未来的高集成度微电子和光电子应用奠定了基础。

COL 12(10), 102702(2014) CHINESE OPTICS LETTERS October 10, 2014

High-quality InGaAs/GaAs quantum well (QW) is a

key structure for many optoelectronic

[1,2]

and micro-

electronic

[3,4]

devices. High-strain InGaAs/GaAs struc-

ture laser diode has been investigated because of its

large emitting wavelength range

[5]

and promising appli-

cation in communication

[6,7]

. It has been reported that

highly strained and high-quality epitaxial InGaAs/

GaAs structures have been manufactured by molecu-

lar beam epitaxy

[8]

and metal-organic chemical vapor

deposition (MOCVD)

[9,10]

techniques. Kim et al.

[11]

pre-

pared InGaAs/GaAs strained multiple QWs (MQWs)

by MOCVD. The detected MQW peaks by photocur-

rent and photoluminescence (PL) spectra were assigned

to the fundamental excitonic transitions of electron–

heavy hole and electron–light hole

[11]

. InGaAs/GaAs/

AlGaAs QW structures grown at dierent tempera-

tures by MOCVD using tertiarybutylarsine as group V

source exhibited that the QW grown at 640 °C showed

the highest PL intensity

[12]

. A double-QW structure

was prepared on GaAs substrate by MOCVD, which

showed room temperature luminescence at 1215 nm

and spectral linewidth of 48 meV

[13]

. It was reported

that a full-width at half-maximum (FWHM) of about

32 meV with wavelength of 1054 nm was obtained

when a strain buer layer (SBL) was inserted into an

InGaAs/GaAs structure, which was grown with a V/

III ratio of 100 and a growth rate of 3 mm/h

[14]

. It was

also reported that when SBLs were inserted during In-

GaAs growth, the FWHM was decreased to 29 meV

at a peak of 1069 nm

[15]

. For highly strained InGaAs

double-QW structure, the FWHM decreased with high-

er growth rate due to lower density of defects, which

was reported that the FWHM decreased to about 26

meV as the growth rate reached to about 2 mm/h

[16]

High-strain InGaAs/GaAs quantum

well grown by MOCVD

Lei Gu (谷雷)

, Lin Li (李林)

, Zhongliang Qiao (乔忠良)

, Lingyi Kong (孔令沂)

Huibo Yuan (苑汇帛)

, Yang Liu (刘洋)

, Yin Dai (戴银)

, Baoxue Bo (薄报学)

and Guojun Liu (刘国军)

National Key Lab of High Power Semiconductor Lasers, Changchun University of Science

and Technology, Changchun 130022, China

AIXTRON China Limited, Shanghai 200052, China

Corresponding author: licust@126.com

Received February 26, 2014; accepted July 3, 2014; posted online September 3, 2014

High-strain InGaAs/GaAs quantum wells (QWs) are grown by low-pressure metal-organic chemical vapor de-

position (LP-MOCVD). Photoluminescence (PL) at room temperature is applied for evaluation of the optical

property. The inuence of growth temperature, V/III ratio, and growth rate on PL characteristic are inves-

tigated. It is found that the growth temperature and V/III ratio have strong eects on the peak wavelength

and PL intensity. The full-width at half-maximum (FWHM) of PL peak increases with higher growth rate of

InGaAs layer. The FWHM of the PL peak located at 1039 nm is 20.1 meV, which grows at 600 °C with V/

III ratio of 42.7 and growth rate of 0.96 mm/h.

OCIS codes: 350.3390, 270.0270, 260.1180, 300.6470.

doi: 10.3788/COL201412.102702.

Although the highly strained InGaAs/GaAs structure

has been studied for many years, the reported PL peak

FWHM is usually still larger than 25 meV. Here, we

have investigated the impact of dierent growth condi-

tions for InGaAs/GaAs QW PL property. The struc-

ture is In

1-x

As signal QW with a thicknesses of 10

nm sandwiched between 300 nm thick GaAs layers. All

the samples were measured by an Accent RPM2000

Compound Semiconductor PL System at room temper-

ature. By optimizing growth temperature, V/III ratio,

and growth rate, a 20.1 meV FWHM with room tem-

perature luminescence at 1039 nm was obtained, which

was the narrowest FWHM for high-strain InGaAs/

GaAs structure known to the best of our knowledge.

Trimethylindium (TMIn) and trimethylgallium were

used as group III sources and arsine (AsH

) was used

as group V source. The growth parameters of the ex-

periment are shown in Table 1. Sample S1 had a 10

nm QW layer, which was grown at 650 °C with a V/III

ratio of 65 and a growth rate of 1.15 mm/h. Samples S2

and S3 were grown at 600 and 550 °C, respectively, with

the other growth parameters same as sample S1. The

V/IIII ratios of S4, S5, S6, and S7 were 55.5, 51.5, 42.7,

and 34.2, respectively. For S8 and S9 samples, the QW

growth rates were 1.38 and 0.96 mm/h, respectively.

The growth temperature has a signicant eect on the

crystal quality

[17]

. Indium atoms will become more active

when temperature increases, so lower growth tempera-

ture helps keep more indium atoms in the QW layer, in

which way the PL property is improved and the indium

ratio increases resulting in a red-shift wavelength. Be-

sides, there will be more adducts depositing on the sub-

strate surface when the growth temperature is higher,

in which way the quality of crystal lattice deteriorates.

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