"Onsemi功率集成模块AND9988技术综合文档与应用指南"

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The Onsemi Power Integrated Module (PIM) AND9988 is a comprehensive technical document that provides detailed information on the features and capabilities of the product. Published by Semiconductor Components Industries, LLC in December 2019, this document aims to serve as a guide for users to understand the technical aspects of the PIM AND9988 and how to utilize its features effectively. The document consists of detailed technical specifications, reference circuits, and application-related notes to ensure optimal usage of the product for its intended end use. It covers the following parts: NVG800A75L4DSC750 V, 800 A, and NVG400A120L2SDSC1200 V, 400 A, providing users with a comprehensive understanding of the technical aspects of these components. The objective of the document is to provide users with all the necessary technical information required for understanding the product features and capabilities. It serves as a resource for engineers, designers, and technicians working with power integrated modules, allowing them to make informed decisions regarding the integration and utilization of the AND9988 PIM in their applications. By offering detailed technical guidance, the document aims to enhance the user experience and ensure that the product is used in an optimal manner for its intended end use. It provides valuable insights into the product's performance, functionality, and application considerations, ultimately aiming to support users in achieving their desired outcomes with the AND9988 PIM. Overall, the AND9988 technical guide from Onsemi serves as a valuable resource for individuals and organizations seeking to understand and effectively utilize the capabilities of the Power Integrated Module. With its comprehensive technical details and application-related notes, it is an essential tool for leveraging the full potential of the AND9988 PIM in various power electronic applications.

AND9988/D

www.onsemi.com

The Rth

,J−C

of the IGBT and diode are measured by

Thermal Dual Interface Method (TDIM). The Thermal

impedance measurements were carried out using a MicRed

Power tester. Due to the presence of the spacer the heat

dissipation is not symmetrical for top and bottom substrates.

This additional spacer between die and substrate increases

Rth

,J−C

for that side. The equivalent Rth

,J−C

of the die is

calculated by paralleling the Rth

,J−C

, TOP and Rth

,J−C

, BOT.

thj−c

(

DSC

)

th−JC,TOP

@ R

th−JC,BOT

th−JC,TOP

) R

th−JC,BOT

(eq. 2)

Where Rth

,J−C

,TOP is the thermal resistance from

junction to top substrate and Rth

,J−C

,BOT is the thermal

resistance from junction to bottom substrate.

The Rth

,J−C

can be extracted by the TDIM method. The

TDIM method requires two thermal impedance curves.

These are measured in two steps.

a. Thermal impedance from junction to fluid

(Rth

,J−F

) is measured by using a thermal interface

material (TIM) between the module and the

heatsink.

b. In the second step, Rth

,J−F

is measured without a

TIM between the module and the heat sink.

The point of separation of these two curves gives the

equivalent Rth

,J−C

. In a similar way thermal resistance from

junction to the top substrate (Rth

,J−C

,TOP) and the bottom

substrate (Rth

,J−C

,BOT) are measured.

The VE−Trac Dual module was mounted onto liquid

cooled heatsink with a TIM material, a clamping torque of

1 Nm is applied to the heatsink terminals to generate the

660N of clamping force and this ensures optimal thermal

contact between the module and the heatsink. Note that the

torque specification will vary with different heatsink

designs. The TIM material chosen is Honeywel®l PTM

7000, it is a phase change material with a thermal

conductivity of 6.5 W/m.K. The material is available in

paste or pad form and all the measurements are done with the

200 mm pad die cut to the required specifications in the

‘Assembly Guide’. The mounting instructions and screwing

sequence for the Dual modules are shown in Figure 7.

Figure 7. Thermal Measurement Setup and Sequence

AND9988/D

www.onsemi.com

To obtain the impedance curves, a heating current of 250A

with a sense current of 100 mA (I

) is applied to the device

under test (DUT), until it reaches to the thermal steady state

condition (30 sec). During the heating phase, the collector

emitter voltage drop is monitored which is used to calculate

the heating power of the IGBT or the diode. Once the module

reaches the thermal steady state condition, the heating

current is switched off or reduced to the level of sense

current I

. The corresponding voltage variations (Vce, Vf)

of the DUT are recorded by MicRed Power tester. The

electrical disturbances at the beginning of the measurements

(voltage transients) were corrected by the T3ster master

software. The cooling transient curves of the IGBT and

diode are then converted into junction temperatures by the

following equations:

TSP

(

)

+ −

IGBTV

or K

Diode

) V

(eq. 3)

(

)

(t) * T

(eq. 4)

Here Tc is considered as inlet Fluid temperature. The

cooling curves of an IGBT and diode, are the collector

emitter voltage (Vce) and forward voltage drop (Vf) as a

function of Junction temperatures. The calibration curve of

the IGBT is obtained by heating up the Dual module from 20

°C to 120 °C at a constant sense current of 100 mA (I

) and

a gate emitter voltage (V

) of 15 V. The corresponding

thermal curves and structure functions for the IGBT and

diode are shown below:

Figure 8. (a) Thermal impedance for IGBT (a) and Diode (b) with and without TIM with the Corresponding

Structure Functions for the IGBT(c) and Diode (d)

The point of separation of the two impedance curves (with

TIM and Without TIM) defines the Rth

,J−C

. The detailed

explanation of the measuring Rth

,J−C

is explained in

JESD51−14−JEDEC standard. The transient thermal

impedance of IGBT or diode are specified using structure

functions shown in Figure 8. In general, the thermal

capacitance of a structure function represent the heat

propagating into a material layer of certain volume and the

thermal resistance remains relatively constant. The increase

in thermal resistance, indicates the heat crossing a boundary

between two layers of different thermal properties.

Thermal Modeling

The information needed to develop circuit level or

mathematical model for the power module is provided

below. This includes the equivalent thermal impedance and

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