FM24C256: 256KB Ferroelectric RAM with 10Billion Endurance and A...
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FM24C256是一款由RAMTRON International Corporation生产的高性能非易失性随机存取存储器(RAM)芯片，其规格符合公司的标准保修条款。这款产品经过了内部严格的1850 Ramtron Drive, Colorado Springs, CO 80921工厂的认证测试，并已达到生产阶段。它提供了256KB（256千比特）的存储容量，以32,768个8位字节的组织形式。
主要特性包括：
1. **高耐用度**：FM24C256支持超过10亿次（10^10）的读写操作，这意味着其寿命极长，适合于需要长期保存数据的应用场景。
2. **无延迟写入**（NoDelay™ Writes）：该技术确保写入操作几乎瞬间完成，提高了数据处理的效率。
3. **先进的 Ferroelectric工艺**：利用铁电效应，实现快速的两线串行接口，能够在高达1MHz的总线频率下工作，兼容低速接口如100kHz和400kHz。
4. **低功耗设计**：FM24C256在5V电压下运行，具有极低的功耗，仅在100kHz工作模式下主动状态电流为200μA，而在待机模式下仅为100μA，符合工业标准，有利于延长电池寿命。
5. **温度适应性**：产品适用于工业环境，工作温度范围可达-40°C至+85°C，确保在各种苛刻条件下仍能稳定运行。
6. **封装类型**：采用8引脚EIA J-socket SOIC封装，便于集成到电路板上。
7. **绿色包装选项**：考虑到环保需求，FM24C256还提供绿色包装选择，体现了RAMTRON对可持续发展的承诺。
这款产品在设计上兼顾了性能、可靠性和节能，特别适合于需要长期数据存储且对功耗敏感的嵌入式系统、物联网设备以及需要高度耐用性的电子应用中。在应用时，开发者可以利用其高速接口进行高效的数据操作，并通过其工业级温度耐受能力确保在严酷环境中的稳定性。
FM24C256
Rev 3.1
May 2005 Page 3 of 12
Overview
The FM24C256 is a serial FRAM memory. The
memory array is logically organized as 32,768 x 8 bit
memory array and is accessed using an industry
standard two-wire interface. Functional operation of
the FRAM is similar to serial EEPROMs. The major
difference between the FM24C256 and a serial
EEPROM relates to its superior write performance.
Memory Architecture
When accessing the FM24C256, the user addresses
32,768 locations each with 8 data bits. These data bits
are shifted serially. The 32,768 addresses are
accessed using the two-wire protocol, which includes
a slave address (to distinguish from other non-
memory devices), and an extended 16-bit address.
Only the lower 15 bits are used by the decoder for
accessing the memory. The upper address bit should
be set to 0 for compatibility with higher density
devices in the future.
The memory is read or written at the speed of the
two-wire bus. Unlike an EEPROM, it is not
necessary to poll the device for a ready condition
since writes occur at bus speed. By the time a new
bus transaction can be shifted into the part, a write
operation is complete. This is explained in more
detail in the interface section below.
Users can expect several obvious system benefits
from the FM24C256 due to its fast write cycle and
high endurance as compared with EEPROM.
However there are less obvious benefits as well. For
example in a high noise environment, the fast-write
operation is less susceptible to corruption than an
EEPROM since the write cycle is completed quickly.
By contrast, an EEPROM requiring milliseconds to
write is vulnerable to noise during much of the cycle.
Note that the FM24C256 contains no power
management circuits other than a simple internal
power-on reset. It is the user’s responsibility to
ensure that V
DD
is maintained within data sheet
tolerances to prevent incorrect operation.
Two-wire Interface
The FM24C256 employs a bi-directional two-wire
bus protocol using few pins and little board space.
Figure 2 illustrates a typical system configuration
using the FM24C256 in a microcontroller-based
system. The industry standard two-wire bus is
familiar to many users but is described in this section.
By convention, any device that is sending data onto
the bus is the transmitter while the target device for
this data is the receiver. The device that is controlling
the bus is the master. The master is responsible for
generating the clock signal for all operations. Any
device on the bus that is being controlled is a slave.
The FM24C256 is always a slave device.
The bus protocol is controlled by transition states in
the SDA and SCL signals. There are four conditions
including Start, Stop, Data bit, and Acknowledge.
Figure 3 illustrates the signal conditions that specify
the four states. Detailed timing diagrams are shown
in the Electrical Specifications section.
Microcontroller
SDA SCL
FM24C256
A0 A1 A2
SDA SCL
FM24C64
A0 A1 A2
VDD
Rmin = 1.8 K
Ω
Rmax = tR/Cbus
Figure 2. Typical System Configuration
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