Spectroscopy properties and high-efficiency semiconductor saturable
absorber mode-locking operation with highly doped (11 at.%)
Yb:Sr
3
Y
2
(BO
3
)
4
crystal
Shijia Sun
a
, Fei Lou
b
, Yisheng Huang
a
, Baitao Zhang
b
, Feifei Yuan
a
, Lizhen Zhang
a
,
Zhoubin Lin
a
,
*
, Guofu Wang
a
, Jingliang He
b
,
**
a
Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences,
Fuzhou 350002, China
b
State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
article info
Article history:
Received 5 January 2016
Received in revised form
9 June 2016
Accepted 17 June 2016
Available online 20 June 2016
Keywords:
Yb:Sr
3
Y
2
(BO
3
)
4
crystal
Spectroscopy
Highly efficient femtosecond lasers
Semiconductor saturable absorber mirror
mode locking
abstract
A systematic investigation of the spectroscopy properties and semiconductor saturable absorber mirror
mode-locking performances of highly doped Yb:Sr
3
Y
2
(BO
3
)
4
(Yb:SYB) crystal was reported for the first
time. The broad emission spectral bands indicate the great potential of Yb:SYB for ultrafast laser ap-
plications. 116 fs, 120 fs and 126 fs pulses lasers were generated with more than 1 W average output
power from the a-cut, b-cut and c-cut Yb:SYB based oscillators, respectively. The corresponding slope
efficiencies and optical to optical efficiencies could reach to 49e54% and 31e33%, respectively. The
experimental results show the excellent potential of Yb:SYB crystal for generating highly efficient
femtosecond lasers.
© 2016 Elsevier B.V. All rights reserved.
1. Introduction
In recent years, with the rapid development of Yb
3þ
ion lasers,
the Yb-doped crystals have been increasingly known as promising
gain mediums. They are particularly suitable for achieving ultrafast
lasers due to their broad and flat emission bands. Many efforts have
been paid to minimize the pulses duration by many groups and the
impressive results of 35 fs [1],87fs[2],69fs[3],65fs[4],67fs[5],
35 fs [6],70fs[7],33fs[8] and 32 fs [9] pulses have been
demonstrated with mode-locked Yb:YCOB, Yb:YAB, Yb:BOYS,
Yb:KYW, Yb:KGW, Yb:YAG, Yb:SYS, Yb:CALYO and Yb:CALGO lasers,
respectively. However, the optical to optical efficiencies of the
femtosecond lasers in Refs. [1e9] were only 3%e10%. So far, a few
promising results were generated based on Yb:CALGO (20%, 94 fs)
[10], Yb:CALYO (20%, 156 fs) [11], Yb:YSO (17%, 198 fs) [12] and
Yb:LSO (17%, 260 fs) [12] lasers. In addition, A. A. Kovalyov et al.
realized a 114 fs Yb:KYW laser with an optical to optical efficiency
of 33.3% [13]. V. E. Kisel et al. reported a powerful Yb:KGW laser
with 162 fs pulses, and the corresponding optical to optical effi-
ciency can reach up to 37.5% [14].
From the point view of economizing energy, high-efficiency
femtosecond lasers should be a very meaningful topic. In other
words, it is interesting to explore novel candidates for achieving
efficient femtosecond lasers. Not long ago, the growth, spectra and
CW laser properties of 3 at.% Yb
3þ
:Sr
3
Y
2
(BO
3
)
4
(Yb:SYB) crystal
were reported in our laboratory [15]. Generally, Yb-doped gain
media allow a high doping concentration, which may be beneficial
to obtain high-efficiency lasers [7,8,11,13,16,17]. According to the
investigations of Yb-doped crystals by P. H. Haumesser et al., an
amount of about 8.0 10
20
ions/cm
3
for Yb
3þ
ion is suitable for
laser oscillation [18]. So the better Yb-doped concentration was
calculated as about 10.2 at.% for Yb:SYB crystal. In order to optimize
the laser output-efficiency, the Yb:SYB crystal with 15 at.% doping
in the melt was grown in our laboratory referring to the effective
segregation coefficient of 0.75 in Ref. [15].
In this paper, the spectroscopy properties and semiconductor
saturable absorber mirror (SESAM) mode-locked laser perfor-
mances of Yb:SYB crystal were investigated for the first time. The
results indicate the great potential of Yb:SYB crystal for generating
* Corresponding author.
** Corresponding author.
E-mail addresses: lzb@fjirsm.ac.cn (Z. Lin), jlhe@sdu.edu.cn (J. He).
Contents lists available at ScienceDirect
Journal of Alloys and Compounds
journal homepage: http://www.elsevier.com/locate/jalcom
http://dx.doi.org/10.1016/j.jallcom.2016.06.167
0925-8388/© 2016 Elsevier B.V. All rights reserved.
Journal of Alloys and Compounds 687 (2016) 480e485
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