增强可调性能：(110)结构化BaSn0.15Ti0.85O3/Ba0.6Sr0.4TiO3/BaZr0.2Ti0.8O3多层薄膜

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本文主要探讨了一种新型的（1 1 0）方向有序的结构化复合薄膜——BaSn0.15Ti0.85O3/Ba0.6Sr0.4TiO3/BaZr0.2Ti0.8O3多层结构。这种多层结构是在脉冲激光沉积技术下，通过在Pt-Si基底上生长得到的，相比于传统的单层介电可调薄膜，如BaSn0.15Ti0.85O3/Ba0.6Sr0.4TiO3和Ba0.6Sr0.4TiO3/BaZr0.2Ti0.8O3双层，它展现出显著增强的电性能。实验结果显示，这种多层复合薄膜在沿（1 1 0）晶向上的生长特性优于单层，这可能归功于其优化的晶格匹配和界面稳定性。在室温下，当施加400 kV/cm的偏置电场时，该材料表现出高达71.3%的大可调谐性，显示出出色的介电可调性能。此外，尽管在高电场下工作，其介电损耗保持在较低水平，仅为0.0063，而漏电流密度维持在极低的1.0×10^-10 A/cm^2，这表明其优良的绝缘特性。品质因数（FoM），一个衡量电介质性能的重要参数，计算得出为113，这表明BaSn0.15Ti0.85O3/Ba0.6Sr0.4TiO3/BaZr0.2Ti0.8O3多层复合薄膜在高频电路中的性能优越，对于电可操纵应用具有极大的潜力。其优异的电调性能、低损耗和高品质因数使其成为高性能电子设备，如传感器、滤波器和频率调谐器的理想选择。研究还涉及了薄膜的表面和界面特性，以及薄膜制备过程中的蒸发沉积技术和氧化效应。这些因素对最终薄膜的性能有着关键的影响，通过调控这些参数，科学家们能够优化多层复合薄膜的性能，以满足日益增长的高性能电子器件的需求。总结来说，这篇研究展示了BaSn0.15Ti0.85O3/Ba0.6Sr0.4TiO3/BaZr0.2Ti0.8O3多层复合薄膜在结构设计、生长方法和性能优化方面的进步，为开发高性能电可操纵器件提供了新的可能性。这项工作的成果不仅扩展了对复杂介电结构的理解，也为未来薄膜材料科学和微电子技术的发展奠定了坚实的基础。

(1 1 0)etextured BaSn

0.15

0.85

/Ba

0.6

0.4

TiO

/BaZr

0.2

0.8

multilayers with enhanced tunable performance

Shihui Yu

, Wentao Lou

, Chunmei Zhang

, Muying Wu

, Leijiao Ge

, Helei Dong

Lingxia Li

School of Microelectronics and Key Laboratory for Advanced Ceramics and Machining Technology, Ministry of Education, Tianjin University, Tianjin,

300072, PR China

School of Electronic Engineering and Intelligentization, Dongguan University of Technology, Guangdong Dongguan, 523808, PR China

School of Electrical Information and Engineering, Tianjin University, Tianjin, 300072, PR China

School of Instrument and Electronics, North University of China, Tai Yuan, 030051, PR China

article info

Article history:

Received 23 September 2018

Received in revised form

4 December 2018

Accepted 5 December 2018

Available online 6 December 2018

Keywords:

Surfaces and interfaces

Thin ﬁlms

Vapor deposition

Dielectric response

Oxidation

abstract

BaSn

0.15

0.85

/Ba

0.6

0.4

TiO

/BaZr

0.2

0.8

multilayer, BaSn

0.15

0.85

/Ba

0.6

0.4

TiO

and Ba

0.6

0.4

TiO

BaZr

0.2

0.8

bilayer composite thin ﬁlms are deliberately grown on Pt-Si substrates by pulsed laser

deposition. The multilayers exhibit preferential growth along the (1 1 0) direction and reveal prominently

enhanced dielectric tunable performance compared to the previous reported single-layer dielectric

tunable thin ﬁlms, the BaSn

0.15

0.85

/Ba

0.6

0.4

TiO

and Ba

0.6

0.4

TiO

/BaZr

0.2

0.8

bilayers at room

temperature. For the multilayers, a large tunability of 71.3% under bias electric ﬁeld of 400 kV/cm is

achieved, while the dielectric loss is 0.0063 and the leak current density is ~1.0  10

10

A/cm

at 300 kV/

cm. Calculation of ﬁgure of merit (FoM) shows a large value of 113. Such outstanding properties have

suggested that BaSn

0.15

0.85

/Ba

0.6

0.4

TiO

/BaZr

0.2

0.8

multilayer composite thin ﬁlms are excellent

candidates for electrically steerable applications.

1. Introduction

The characteristic of integration and miniaturization of electri-

cally tunable devices strongly demands high-quality tunable thin

ﬁlms with high dielectric tunability (50%), low loss tangent

(0.01) and large dielectric constant (200) [1e4]. Pb-free ferro-

electric barium zirconate titanate (BaZr

1x

), barium strontium

titanate (Ba

1x

TiO

), and barium tin titanium (BaTi

1-x

) thin

ﬁlms have been widely investigated for integration into electrically

tunable devices such as dielectric tunable capacitors, resonators,

antennas, phase shifters, tunable ﬁlters, electrical controlled oscil-

lators and so on [1,3,5,6]. However, the high dielectric loss

(generally 10

2

) strongly inhibits their further practical applica-

tions [7]. In order to reduce the dielectric loss of BST thin ﬁlms,

great efforts have been made in the past decades [8e11 ]. Among

various approaches, ﬁlm texturing and dielectric/ferroelectric

layered composite are considered to be two effective methods for

loss decreasing. Nonetheless, the extent of reduction is very limited

through the ﬁlm texturing, due to the inﬂuence of inherent char-

acteristic of ferroelectric thin ﬁlms. For the layered composites, the

dielectric constants of common dielectric layer materials such as

MgO [12], SiN [13], Bi

1.5

MgNb

1.5

(BMN) [14], and Bi

1.5

ZnNb

1.5

(BZN) [15] are low, which incline to consume a majority of apply

bias voltage, resulting in a deteriorated tunable performance of the

heterolayers. Fabricating higheperformance tunable thin ﬁlms are

still challenging.

Recently, Zhao group [16] studied the BaTiO

/BaSrTiO

/SrTiO

multilayer composite thin ﬁlms fabricated by sol-gel method, they

found that the multilayers had an improved dielectric performance.

Zhu group [17] prepared the BaSrTi

1.1

/BaSrTi

1.05

/BaSrTiO

multilayer composite thin ﬁlms by radio frequency magnetron

sputtering, they also found that the dielectric loss tangent could be

certainly decreased by the design of the multilayer structure while

the dielectric tunability was little changed. Peng et al. [18] fabri-

cated Ba

0.6

0.4

1þy

/Ba

0.6

0.4

TiO

/Ba

0.6

0.4

1þy

multilayer

structure ﬁlms. They reported that the multilayer structure was

beneﬁcial to lowering the dielectric loss and enhancing the

* Corresponding author.

** Corresponding author.

E-mail addresses: Legendglj99@tju.edu.cn (L. Ge), donghelei@nuc.edu.cn

(H. Dong).

Contents lists available at ScienceDirect

Journal of Alloys and Compounds

journal homepage: http://www.elsevier.com/locate/jalcom

https://doi.org/10.1016/j.jallcom.2018.12.074

Journal of Alloys and Compounds 781 (2019) 689e695

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增强可调性能：(110)结构化BaSn0.15Ti0.85O3/Ba0.6Sr0.4TiO3/BaZr0.2Ti0.8O3多层薄...

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