硅基上室温III-V纳米激光器：集成分布式布拉格反射镜的高效设计与应用

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本文主要探讨了在室温下，通过直接生长在(001)硅绝缘体上的III-V族氮化物材料上实现的高效、可扩展、无缓冲区和紧凑的激光器的设计与操作。这种创新技术对于硅光子学领域至关重要，因为它能够在标准工业级(001)硅衬底上集成分布式布拉格反射器(DBRs)，从而实现对光信号的高效控制和传输。在硅光电子学中，利用硅作为基板的优势在于其与传统的半导体工艺兼容，可以无缝集成到现有的硅芯片中。直接生长III-V族化合物半导体（如砷化镓或磷化铟镓等）激光器在(001)硅衬底上，能够克服传统III-V材料与硅不相容的问题，减少工艺步骤，降低成本，并提高集成度。通过优化的(001)硅-on-insulator (SOI)平台，激光器可以在没有额外的缓冲层的情况下，实现高效率的光发射，这对于微型化和高性能光通信系统的发展极为有利。设计的关键在于集成的分布式布拉格反射器。分布式布拉格反射器是一种光波导结构，它由交替排列的高折射率和低折射率层组成，能够在特定波长范围内反射光信号，形成光学共振腔，从而增强激光器的辐射强度。作者模拟了不同模式的光引导下的镜面反射特性，通过精细调整这些反射器的结构，确保了激光器在电信号频段内具有稳定的性能和良好的光束质量。研究团队针对(001)SOI的生长条件和工艺参数进行了深入研究，以优化纳米尺度的DBR设计，确保了激光器在室温下能稳定运行。他们探讨了多种不同的镜面架构，如量子阱(QW)、量子点(QD)或者微腔结构，以找到最佳的光存储和放大机制。文章的主要贡献在于提供了一种新型的III-V族半导体激光器设计方案，它在硅基平台上实现了高效的光发射和灵活的集成能力。这不仅推进了硅光子学领域的前沿技术，也为未来集成光电子系统的研发提供了重要的参考，比如光通信、数据中心光网络和生物传感等领域。此外，这项工作还展示了如何通过材料科学与光子学的交叉融合，推动了微纳尺度光源技术的进步。

Room temperature III–V nanolasers with

distributed Bragg reflectors epitaxially

grown on (001) silicon-on-insulators

YU HAN,

1,†

WAI KIT NG,

2,†

YING XUE,

KAM SING WONG,

2,3

AND KEI MAY LAU

1,4

Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon,

Hong Kong, China

Department of Physics and William Mong Institute of Nano Science and Technology, Hong Kong University of Science and Technology,

Clear Water Bay, Kowloon, Hong Kong, China

e-mail: phkwong@ust.hk

e-mail: eekmlau@ust.hk

Received 31 May 2019; revised 13 July 2019; accepted 30 July 2019; posted 30 July 2019 (Doc. ID 368995); published 27 August 2019

Efficient, scalable, bufferless, and compact III–V lasers directly grown on (001)-oriented silicon-on-insulators

(SOIs) are preferred light sources in Si-photonics. In this article, we present the design and operation of

III–V telecom nanolaser arrays with integrated distributed Bragg reflectors (DBRs) epitaxially grown on indus-

try-standard (001) SOI wafers. We simulated the mirror reflectance of different guided modes under various

mirror architectures, and accordingly devised nanoscale DBR gratings to support high refl ectivity around

1500 nm for the doughnut-shaped TE

mode. Building from InP/InGaAs nanoridges grown on SOI, we

fabricated subwavelength DBR mirrors at both ends of the nanoridge laser cavities and thus demonstrated

room-temperature low-threshold InP/InGaAs nanolasers with a 0.28 μm

cross-section and a 20 μm effective

cavity length. The direct growth of these bufferless nanoscale III–V light emitters on Si-photonics standard

(001) SOI wafers opens future options of fully integrated Si-based nanophotonic integrated circuits in the telecom

wavelength regime.

https://doi.org/10.1364/PRJ.7.001081

1. INTRODUCTION

Epitaxial growth of III–V light emitters on (001)-oriented Si

substrates provides an intriguing alternative to the bonding ap-

proach for the realization of fully integrated Si-photonics chips

[1,2]. Such a monolithic integration scheme is compatible with

the currently scalable, high-yield, and cost-effective manufac-

turing process offered by electronics foundries. Recent studies

highlight the demonstration of room-temperature operation,

low threshold, and high reliability III–V laser diodes directly

grown on Si wafers using quantum dots as the active gain

medium and engineered III–V/Si templates for minimal dislo-

cation densities [3–5]. Using various defect trapping and filter-

ing techniques, the defect density of current III–V/Si templates

has been reduced to the order of 10

−2

for GaAs on Si and

−2

for InP on Si, respectively [6–8]. However, the sev-

eral micron thick III–V buffer needed for defect reduction

makes it difficult for the integration of the III–V light sources

with the Si waveguides underneath. While present research fo-

cuses on high-performance individual laser diodes grown on Si

substrates, future applications require efficient on-chip cou-

pling of III–V lasers with Si-based photonic and electronic

devices, and therefore necessitate bufferless III–V light emitters

directly grown on (001)-oriented SOI wafers [9].

Bufferless III–V nanostructures with various compositions

and architectures have been selectively grown on patterned

(001) Si and SOI substrates [10–18], and subsequently enabled

optically pumped nanoridge lasers with different emission

wavelengths [19–22]. Despite the subwavelength scale of the

cross-section of these nanolasers, the length of the nanocavities,

however, is usually longer than 50 μm to compensate for cavity

loss and sustain room temperature laser oscillation. This issue

aggravates at longer wavelengths, particularly in the strategically

important telecom bands, due to the increasing intrinsic and

mirror losses [23]. A cavity length of 100 μm is required to

support room-temperature O-band lasing inside suspended

InP/InGaAs nanocavities on bulk Si substrates [20]. The con-

tinuing miniaturization of the laser footprint improves the

integration density and reduces the power dissipation of

Si-based photonic integrated circuits [24–26]. Scaling down

the device dimension also opens new applications beyond op-

tical interconnects and data processing, such as sensing, medical

imaging, holography, and many more [27,28]. In contrast to

Research Article

Vol. 7, No. 9 / September 2019 / Photonics Research 1081

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