降低硅光子器件与系统能耗策略探讨
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“Lowering the energy consumption in silicon photonic devices and systems [Invited]”
这篇文献主要探讨了降低硅光子学设备和系统能量消耗的关键问题。硅光子学是一种利用硅材料来处理光信号的技术，它在数据通信、计算和传感器等领域具有广泛的应用。然而，随着技术的发展，能源效率成为了一个至关重要的考虑因素。
文章首先强调了当前硅光子学设备的能量消耗问题，并列举了四个关键领域来降低这种消耗：
1. 减少热光效应的影响：热光效应是指光信号通过材料时，由于温度变化引起折射率变化的现象，这会导致器件性能的不稳定。文章指出，通过设计和优化，例如使用Mach-Zehnder干涉仪（MZI）结构的器件，可以实现无额外能量消耗的热稳定性能。相比之下，微环谐振器（micro-rings）目前还没有有效的被动热稳定解决方案。
2. 提升激光器在硅上的墙插效率：墙插效率是衡量光源将输入电能转化为光能的效率。文章提到，直接键合的III-V族材料（如镓砷、氮化镓等）与硅结合，可以提高激光器在硅基平台上的效率，从而减少能量损失。
3. 优化调制器的能效性能：调制器是改变光信号强度或相位的关键组件。为了降低其能量消耗，研究人员正在寻找新的调制机制和设计，以提高调制速度同时保持低驱动电压。
4. 增强光电探测器的灵敏度：光电探测器用于转换光信号为电信号。高灵敏度的探测器可以减少所需的入射光功率，从而降低整体系统的能耗。改进材料、结构或采用增益机制（如雪崩光电二极管）是提高探测器灵敏度的方法。
降低硅光子学设备和系统的能量消耗需要综合考虑多方面的技术改进。通过解决上述四个关键问题，可以显著提高硅光子学的能源效率，这对于满足未来高速通信和计算需求至关重要。该领域的研究将持续推动技术创新，以实现更加节能、高效的光电子解决方案。
approach, wavelength-dependent athermalization for the
asymmetric approach, and inefficient utilization of bandwidth
for the cascaded approach. In summary, the thermo-optic-
related energy consumption of MZI-based devices can be to-
tally eliminated with three passive approaches to choose from
according to the requirements of the applications.
B. Temperature-Independent Microring Resonators
Figure 6 illustrates the schematic of a microring resonator,
which is another typical optical-length-based device because
the resonance condition is expressed as
OL
Z
L
n
eff
T;λ;ldl mλ
r
m 1; 2; …; (5)
where OL is the round-trip optical length, the integral path L is
the propagation path for one round-trip in the microring, and
λ
r
is the resource wavelength. Based on Eq. (5), the temper-
ature dependence of λ
r
can be derived as
dλ
r
dT
λ
r
R
L
n
g
T;λ;ldl
·
Z
L
∂n
eff
T;λ;l
∂T
dl; (6)
where n
g
is the group refractive index, n
g
n
eff
− λ · ∂n
eff
∕∂λ.
The effective TOC (∂n
eff
∕∂T) can be approximately ex-
pressed as
∂n
eff
∂T
Γ
core
∂n
corn
∂T
Γ
clad
∂n
clad
∂T
Γ
sub
∂n
sub
∂T
; (7)
where Γ (and ∂n∕∂T) with subscripts of core, clad, and
sub represent the confinement factors (material TOCs)
for the core, cladding, and substrate, as specified in [25].
According to Eq. (7), ∂n
eff
∕∂T>0 for the basic wave-
guide, silica-clad SOI waveguide (∂n
Si
∕∂T ∼ 1.86 × 10
−4
K
−1
,
∂n
SiO
2
∕∂T ∼ 1 × 10
−5
K
−1
), in silicon photonics. Taking this
into Eq. (6), we note that the resonance wavelength will shift
with temperature variation for such silicon microrings. Prior
work has aimed at eliminating or reducing the thermal affec-
tion to the microring resonators, which will be discussed in
three groups according to their working principles.
1. Special Structure Design
Two kinds of special structures are reported for reducing the
temperature dependence of the microring, as demonstrated in
Fig. 7, where Fig. 7(a) shows the asymmetric MZI coupled mi-
croring [26], and Fig. 7(b) shows the dual-ring structure with
resonance splitting [27]. Both schemes are capable of reduc-
ing the temperature dependence of the microring resonator.
Nevertheless, both of them cannot achieve athermal micro-
ring (dλ
r
∕dT 0), which can be concluded from Eqs. (5)–(7).
No matter how the microring structure has been designed, the
resonance wavelength should satisfy Eq. (5), and its temper-
ature dependence can be expressed as Eq. (6). Without intro-
ducing a negative thermo-optic material, ∂n
eff
∕∂T and n
g
are
greater than zero everywhere in the microring, which will
cause dλ
r
∕dT>0 in Eq. (6).
2. Negative Thermo-Optic Material Cladding
The method of negative thermo-optic material cladding was
proposed by Kokubun et al. in 1993 [28] and introduced
into a SOI microring in 2007 [29]. Significant progress has
been achieved since then. The basic configuration of this ap-
proach is illustrated in Fig. 8 where negative thermo-optic
material acts as the upcladding for the SOI waveguide. This
configuration can achieve an athermal microring if the con-
finement factors and the TOCs are well matched according
to Eq. (7) to make ∂n
eff
∕∂T 0. However, two problems
exist in this method and have not been solved. First, the
TOC required for the upcladding material is as high as
−7.8 × 10
−4
K
−1
for an athermal SOI single-mode waveguide
with a dimension of 200 nm × 500 nm because the SOI
waveguide has a strong confinement for light (Γ
core
> 75%
for TE-polarized fundamental mode) [30], but, currently, all
the reported TOC of negative thermo-optic materials is in
the range of −1–3 × 10
−4
K
−1
. To solve this problem, signifi-
cant efforts have been made for the athermal SOI microring
by means of decreasing the confinement factor of the core
with a narrowed waveguide [31–34], slot waveguide [35],
or TM-polarized guided mode [25,29] These are capable
methods for athermal microrings while they suffer from
higher propagation loss and larger bending radius induced
by the low confinement. Second, most of the reported nega-
tive TOC materials (polymer) are still not compatible with
the standard CMOS fabrication process, even though some
Fig. 6. Schematic of a microring resonator.
Fig. 7. Construction of (a) asymmetric MZI coupled microring and
(b) dual-ring structure.
Fig. 8. Schematic of negative TOC material cladding SOI waveguide
in cross-section view.
Zhou et al. Vol. 3, No. 5 / October 2015 / Photon. Res. B31
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