二维钯硫化物驱动的被动Q开关与飞秒脉冲模式锁定铒掺杂光纤激光器

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本文主要探讨了一种基于二维(2D)钯硫化物(Palladium Disulfide, PdS2)的被动Q开关和飞秒脉冲模式锁定掺铒光纤激光器(Passively Q-switched and femtosecond mode-locked erbium-doped fiber laser, EDFL)的设计与实现。PdS2作为一种过渡金属二硫化物(TMDs)家族的新成员，因其独特的层状结构和潜在的光吸收特性，被用于构建高性能的可饱和吸收器(Saturable Absorber, SA)，在光纤激光技术中展现出了巨大潜力。在实验研究中，研究人员成功地实现了基于PdS2的稳定Q开关操作，工作波长在1567纳米。他们发现，当泵浦功率达到50.6毫瓦时，该系统可以自我启动并展现出良好的Q开关性能，脉冲持续时间范围宽广，可以从12.6微秒降低到4.5微秒。另一方面，通过调整系统参数，他们还观察到了模式锁定现象，此时的泵浦功率阈值提高至106.4毫瓦。在这种模式下，产生的脉冲具有极短的持续时间，达到了803飞秒，这在激光脉冲的超短时域特性上取得了显著的进步。这种新型的PdS2作为SA的应用，不仅提高了激光器的稳定性和能量输出，还因其独特的材料性质，如高非线性光学响应和窄带隙，可能在精密测量、光纤通信、生物医学成像等领域展现出更广泛的应用前景。此外，由于其潜在的集成性和小型化优势，这种基于2D材料的激光器设计有望推动光子学器件的发展，特别是在微纳光纤激光器和量子光学应用方面。研究者们对PdS2在激光器中的表现持乐观态度，并认为其在下一代紧凑型、高性能光纤激光系统中具有很高的竞争力。未来的研究可能会进一步探索优化PdS2的制备方法、增强其光吸收性能以及拓展其在不同波长和功率范围内的应用。这项工作为利用2D材料开发新型光纤激光器技术提供了一个重要的里程碑。

Passively Q-switched and femtosecond mode-

locked erbium-doped fiber laser based on a 2D

palladium disulfide (PdS

) saturable absorber

PING KWONG CHENG,

†

CHUN YIN TANG,

†

XIN YU WANG,LONG-HUI ZENG, AND YUEN HONG TSANG*

Department of Applied Physics and Materials Research Center, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, China

*Corresponding author: Yuen. Tsang@polyu.edu.hk

Received 11 October 2019; revised 26 December 2019; accepted 5 January 2020; posted 6 January 2020 (Doc. ID 380146);

published 24 March 2020

Stable Q-switched and mode-locked erbium-doped fiber lasers (EDFLs) are first demonstrated by using the novel

layered palladium disulfide (PdS

), a new member of group 10 transition metal dichalcogenides (TMDs)-based

saturable absorbers (SAs). Self-started Q-switched operation at 1567 nm was achieved with a threshold pump

power of 50.6 mW. The modulation ranges of pulse duration and repetition rate were characterized as 12.6–4.5 μs

and 17.2–26.0 kHz, respectively. Meanwhile, a mode-locked EDFL was also obtained with a pump power thresh-

old of 106.4 mW. The achieved pulse duration is 803 fs, corresponding to a center wavelength of 1565.8 nm and

4.48 nm 3 dB bandwidth. To the best of our knowledge, the achieved pulse duration of the mode-locked EDFL in

this work is the narrowest compared with all other group 10 TMD SA-based lasers.

https://doi.org/10.1364/PRJ.380146

1. INTRODUCTION

Pulsed lasers are extensively being applied in diverse modern

technology fields, ranging from material processing [1,2], medi-

cal treatment [3,4], sensing, metrology [5], to scientific research

[6–8]. Depending on the application, either the Q-switching or

mode-locking technique is utilized to produce laser pulses with

nano- to femtosecond duration. An acousto-optic modulator

(AOM) [9]oranelectro-opticmodulator(EOM)[10] is used

to generate laser pulses actively. However, these active modula-

tors are bulky and costly. Comparatively, passive Q switching

and mode locking based on saturable absorbers (SAs) would

be a cost-effective technique for laser pulse generation.

An SA is a nonlinear optical (NLO) device whose transmit-

tance can be modulated passively according to the incident light

intensity. Semiconductor saturable absorber mirrors (SESAMs,

e.g., InGaAs [11]) and doped crystal (e.g., Cr

4

:YAG [12])

were typically utilized for inducing passively mode-locked

and Q-switched pulses, respectively. Nevertheless, their disad-

vantages of limited bandgap energy and complicated and ex-

pensive synthesis processes still limit the development of the

pulsed laser [13]. Therefore, the exploration of substitutional

SA materials with new features is a sustained quest in the

NLO field. Graphene is one of the most prominent demonstra-

tions of a broadband SA [14,15]. It also motivated the study

of other graphene-like two-dimensional (2D) material SAs,

for instance, graphene oxide [16,17], black phosphorus

(BP) [18,19], as well as transition metal dichalcogenid es

(TMDs) [20]. TMDs are 2D materials that consist of MX

molecular structure, where M is the group 4–10 transition

metal element (Nb, Mo, W) and X is the chalcogenide element

(S, Se, Te). In recent years, TMDs have attracted huge interest

due to their unique atomic structure, distinctive electrical and

photonic properties, strong mechanical strength [21], high

charge carrier mobility [22], and tunable electronic and photonic

properties [23,24]. TMDs have been widely applied in various

optoelectronic applications, ranging from photocatalysts [25]to

field-effect transistors (FETs) [26] to photodetectors [27–30],

and especially SAs (e.g., WS

[31,32]andMoS

[33]).

Recently, the newly developed platinum (Pt)- and palladium

(Pd)-based group 10 layered materials have drawn enormous at-

tention due to the merits of high mobility, remarkable NLO

properties, and high air stability within an ambient environment

[34]. The literature has demonstrated the ultrastable operations

of PtSe

-[26,27]andPdSe

-[30,35,36] based optoelectronic

devices in ambient conditions, which suggested the group 10

TMDs are a promising candidate for laser photonic applications.

For the SA application, the works of Pt-based TMDs–SAs have

been well demonstrated, including of PtS

[37,38], PtSe

[13,34,39,40], and PtTe

[41]. However, there is no report

of ultrafast laser performance based on the Pd TMDs; therefore,

it is worthwhile to further explore and investigate the nonlinear

saturable absorption properties of these layered Pd TMDs.

Palladium disulfide (PdS

) is one of the most competitive can-

didates, with an interesting crystal structure and material proper-

ties. As shown in Fig. 1, PdS

has a pentagonal crystal structure

Research Article

Vol. 8, No. 4 / April 2020 / Photonics Research 511

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