SN65HVD1176
,
SN75HVD1176
SLLS563H –JULY 2003–REVISED NOVEMBER 2015
www.ti.com
6.6 Supply Current
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Driver and receiver, RE at 0 V, DE at V
CC
,
4 6 mA
All other inputs open, no load
Driver only, RE at V
CC
, DE at V
CC
,
3.8 6 mA
All other inputs open, no load
I
CC
Supply Current
(1)
Receiver only, RE at 0 V, DE at 0 V,
3.6 6 mA
All other inputs open, no load
Standby only, RE at V
CC
, DE at 0 V,
0.2 5 μA
All other inputs open
(1) Over recommended operating conditions
6.7 Power Dissipation
over recommended operating conditions (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP
(1)
MAX UNIT
R
L
= 54 Ω, C
L
= 50 pF, 0 V to 3 V,
P
D
Device power dissipation 15 MHz, 50% duty cycle square wave 277 318 mW
input, driver and receiver enabled
Low-K board, no air flow,
–40 64 °C
P
D
= 318 mW
SN65HVD1176
High-K board, no air flow,
–40 89 °C
P
D
= 318 mW
T
A
Ambient air temperature
Low-K board, no air flow,
0 °C
P
D
= 318 mW
SN75HVD1176
High-K board, no air flow,
0 °C
P
D
= 318 mW
T
SD
Thermal shut down junction temperature 150 °C
(1) All typical values are with V
CC
= 5 V and T
A
= 25°C.
6.8 Switching Characteristics
over recommended operating conditions (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP
(1)
MAX UNIT
DRIVER
t
PLH
Propagation delay time low-level-to-high-level output 4 7 10 ns
t
PHL
Propagation delay time high-level-to-low-level output 4 7 10 ns
R
L
= 54 Ω, C
L
= 50 pF,
t
sk(p)
Pulse skew | t
PLH
– t
PHL
| 0 2 ns
See Figure 8
t
r
Differential output rise time 2 3 7.5 ns
t
f
Differential output fall time 2 3 7.5 ns
t
t(MLH)
, t
t(MHL)
Output transition skew See Figure 9 0.2 1 ns
t
p(AZH)
, t
p(BZH)
Propagation delay time, high-impedance-to-active
10 20 ns
t
p(AZL)
, t
p(BZL)
output
t
p(AHZ)
, t
p(BHZ)
Propagation delay time, active-to- high-impedance
10 20 ns
R
L
= 110 Ω,
t
p(ALZ)
, t
p(BLZ)
output
C
L
= 50 pF RE at 0 V
|t
p(AZL)
– t
p(BZH)
|
See Figure 12
Enable skew time 0.55 1.5 ns
|t
p(AZH)
– t
p(BZL)
|
|t
p(ALZ)
– t
p(BHZ)
|
Disable skew time 2.5 ns
|t
p(AHZ)
– t
p(BLZ)
|
t
p(AZH)
, t
p(BZH)
Propagation delay time, high-impedance-to-active
1 4 μs
R
L
= 110 Ω,
t
p(AZL)
, t
p(BZL)
output (from sleep mode)
C
L
= 50 pF RE at 5 V
t
p(AHZ)
, t
p(BHZ)
Propagation delay time, active-output-to high-
See Figure 12
30 50 ns
t
p(ALZ)
, t
p(BLZ)
impedance (to sleep mode)
Time from application of short-circuit to current
t
(CFB)
See Figure 13 0.5 μs
foldback
(1) All typical values are at V
CC
= 5 V and 25°C.
6 Submit Documentation Feedback Copyright © 2003–2015, Texas Instruments Incorporated
Product Folder Links: SN65HVD1176 SN75HVD1176
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