PCIe5.0线性重驱动器DS320PR822：高性能计算与数据中心应用

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"TI-DS320PR822.pdf是关于一款针对PCI Express (PCIe) 5.0及CXL 1.1设计的线性重驱动器芯片的详细技术文档，该器件也支持UPI 2.0协议，最高数据速率可达32Gbps。这款芯片适用于多种接口，包括DisplayPort (DP)、Serial Attached SCSI (SAS)、Serial Advanced Technology Attachment (SATA)、XFI等。" TI的DS320PR822是一款高性能的线性重驱动器，特别设计用于解决高速PCIe 5.0和Compute Express Link (CXL) 1.1接口的信号完整性问题。它提供了四个2x2交叉点开关矩阵功能，能够有效地管理和分配信号路径，确保在高速数据传输时的稳定性和可靠性。该器件拥有出色的信号增强能力，其CTLE(Continuous Time Linear Equalizer)增益可高达22dB，工作频率可达16GHz。此外，它具有超低的延迟，仅为100ps，以及低至75fs的附加随机抖动，这对于处理PRBS (Pseudo-Random Bit Sequence) 数据至关重要。良好的回损性能（Return Loss）在16GHz时为-10dB，确保了信号在传输过程中的质量。 DS320PR822采用单3.3V电源供电，并内置电压调节器，以抵御电源噪声的影响。每个通道的主动功耗仅为160mW，无需额外散热片即可正常工作。配置方式灵活，支持引脚短接、SMBus或EEPROM编程，适应不同应用场景。此外，它具备自动接收检测功能，对于PCIe使用场景尤为适用，能无缝支持PCIe链路训练协议。此器件适用于各种高性能计算环境，如机架式服务器、微型服务器和塔式服务器，以及硬件加速器、网络附加存储、存储区域网络(SAN)和主机总线适配器(HBA)卡、网络接口卡(NIC)和桌面PC等应用。其工作温度范围为-40°C到85°C，封装形式为5.5mm×10mm的64引脚WQFN，紧凑的尺寸使其在高密度系统设计中具有优势。

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)

(1)

MIN MAX UNIT

VCC

ABSMAX

Supply Voltage (VCC) –0.5 4.0 V

VIO

CMOS,ABSMAX

3.3 V LVCMOS and Open Drain I/O voltage –0.5 4.0 V

VIO

5LVL,ABSMAX

5-level Input I/O voltage –0.5 2.75 V

VIO

HS-RX,ABSMAX

High-speed I/O voltage (RXnP, RXnN) –0.5 3.2 V

VIO

HS-TX,ABSMAX

High-speed I/O voltage (TXnP, TXnN) –0.5 2.75 V

J,ABSMAX

Junction temperature 150 °C

stg

Storage temperature range –65 150 °C

(1) Operation outside the Absolute Maximum Ratings may cause permanent device damage. Absolute maximum ratings do not imply

functional operation of the device at these or any other conditions beyond those listed under Recommended Operating Conditions.

If briefly operating outside the Recommended Operating Conditions but within the Absolute Maximum Ratings, the device may not

sustain damage, but it may not be fully functional. Operating the device in this manner may affect device reliability, functionality,

performance, and shorten the device lifetime.

6.2 ESD Ratings

VALUE UNIT

(ESD)

Electrostatic discharge

Human body model (HBM), per ANSI/ESDA/JEDEC JS-001

(1)

±2000

Charged device model (CDM), per ANSI/ESDA/JEDEC JS-002

(2)

±500

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. Pins listed as ±2 kV

may actually have higher performance.

(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN NOM MAX UNIT

VCC Supply voltage, VCC to GND

DC plus AC power should not

exceed these limits

3.0 3.3 3.6 V

VCC

Supply noise tolerance

DC to <50 Hz, sinusoidal

250 mVpp

50 Hz to 500 kHz, sinusoidal

100 mVpp

500 kHz to 2.5 MHz, sinusoidal

33 mVpp

Supply noise, >2.5 MHz,

sinusoidal

10 mVpp

RampVCC

VCC supply ramp time From 0 V to 3.0 V 0.150 100 ms

Operating ambient temperature −40 85 °C

Operating junction temperature All device modes 125 °C

LVCMOS

Minimum pulse width required for

the device to detect a valid signal

on LVCMOS inputs

PD1/0, SEL1/0, and

READ_EN_N

200 μs

VCC

SMBUS

SMBus/I

C SDA and SCL Open

Drain Termination Voltage

Supply voltage for open drain

pull-up resistor

3.6 V

SMBus

SMBus/I

C clock (SCL) frequency

in SMBus secondary mode

10 400 kHz

VID

LAUNCH

Source differential launch

amplitude

800 1200 mVpp

DR Data rate 1 32 Gbps

www.ti.com

DS320PR822

SNLS714 – SEPTEMBER 2022

Submit Document Feedback

Product Folder Links: DS320PR822

6.4 Thermal Information

THERMAL METRIC

(1)

DS320PR822

UNIT

NJX, 64 Pins

θJA-High K

Junction-to-ambient thermal resistance 22.9 ℃/W

θJC(top)

Junction-to-case (top) thermal resistance 9.6 ℃/W

θJB

Junction-to-board thermal resistance 7.2 ℃/W

Junction-to-top characterization parameter 1.8 ℃/W

Junction-to-board characterization parameter 7.1 ℃/W

θJC(bot)

Junction-to-case (bottom) thermal resistance 2.5 ℃/W

(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report.

6.5 DC Electrical Characteristics

over operating free-air temperature and voltage range (unless otherwise noted)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

Power

ACT

Device active power

8 channels active, EQ = 0-2 1.15 1.42 W

8 channels active, EQ = 5-19 1.41 1.75 W

RXDET

Device power consumption while

waiting for far end receiver

terminations

All channels enabled but no far end

receiver detected

166 mW

STBY

Device power consumption in standby

power mode

All channels disabled (PD1,0 = H) 23 mW

Control IO

High level input voltage

SDA, SCL, PD1, PD0, READ_EN_N,

SEL1, SEL0 pins

2.1 V

Low level input voltage

SDA, SCL, PD1, PD0, READ_EN_N,

SEL1, SEL0 pins

1.08 V

High level output voltage

pull-up

= 4.7 kΩ (SDA, SCL,

ALL_DONE_N pins)

2.1 V

Low level output voltage

= –4 mA (SDA, SCL,

ALL_DONE_N pins)

0.4 V

IH,SEL

Input high leakage current for SEL

pins

Input

= SEL1, SEL0 pins 100 µA

Input high leakage current

Input

= VCC, (SCL, SDA, PD1, PD0,

READ_EN_N pins)

10 µA

Input low leakage current

Input

= 0 V, (SCL, SDA, PD1, PD0,

READ_EN_N, SEL1, SEL0 pins)

−10 µA

IH,FS

Input high leakage current for fail safe

input pins

Input

= 3.6 V, VCC = 0 V, (SCL, SDA, ,

PD1, PD0, READ_EN_N, SEL1, SEL0

pins)

200 µA

IN-CTRL

Input capacitance

SDA, SCL, PD1, PD0, READ_EN_N,

SEL1, SEL0 pins

1.6 pF

5 Level IOs (MODE, GAIN0, GAIN1, EQ0_0, EQ1_0, EQ0_1, EQ1_1, RX_DET pins)

IH_5L

Input high leakage current, 5-level IOs VIN = 2.5 V 10 µA

IL_5L

Input low leakage current for all 5-level

IOs except MODE.

VIN = GND −10 µA

IL_5L,MODE

Input low leakage current for MODE

VIN = GND −200 µA

Receiver

RX-DC-CM

RX DC Common Mode Voltage Device is in active or standby state 1.4 V

RX-DC

Rx DC Single-Ended Impedance 50 Ω

DS320PR822

SNLS714 – SEPTEMBER 2022

www.ti.com

8 Submit Document Feedback

Product Folder Links: DS320PR822

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