UCC20225：2.5kVRMS隔离式双通道栅极驱动器

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"TI-UCC20225.pdf 是一款由德州仪器（TI）生产的隔离式双通道栅极驱动器，主要特点是采用了LGA封装，能够实现2.5kVRMS的隔离，并具有优秀的电气性能和高速响应能力。这款芯片适用于服务器、电信、IT、工业设备以及电源和电机驱动等领域。" TI的UCC20225是一款高性能的隔离型栅极驱动器，其主要特性包括： 1. **单输入双输出设计**：该驱动器接收一个输入信号，并通过可编程死区时间控制产生两个独立的输出，用于驱动两个功率开关。 2. **LGA-13封装**：5mmx5mm的小型封装使得UCC20225在空间有限的应用中具有优势，有助于减少电路板的尺寸和复杂性。 3. **高速性能**：具有19ns的典型传播延迟，5ns的最大延迟匹配度和6ns的最大脉宽失真度，适合高频率操作，最高可支持5MHz的工作频率。 4. **电流驱动能力**：能够提供4A的峰值拉电流和6A的峰值灌电流，足以驱动大多数功率MOSFET或IGBT。 5. **兼容性**：输入兼容TTL和CMOS逻辑电平，输入电源电压范围为3V到18V，输出电源电压可达25V，带有8V的欠压锁定（UVLO）功能。 6. **隔离性能**：通过了DIN V VDE 0884-11:2017-01标准的3535VPK隔离认证，以及UL1577标准的2500VRMS隔离测试，确保了在安全关键应用中的可靠性。 7. **抗干扰能力**：能够抑制短于5ns的输入瞬变，同时具有较高的共模瞬态抗扰度（CMTI），大于100V/ns，降低了噪声对系统的影响。 8. **电源定序与快速禁用**：支持电源定序功能，可以快速禁用输出，以应对系统的动态变化。 9. **安全认证**：通过了GB4943.1-2011 CQC认证，满足了中国市场的安全要求。在应用方面，UCC20225常用于服务器、电信设备、工业自动化、交流/直流电源转换、电机驱动器、直流/交流光伏逆变器以及混合动力电动汽车（HEV）和纯电动汽车（BEV）的电池充电器等场合。其高效能和高隔离等级确保了在这些领域的可靠性和稳定性。

UCC20225

ZHCSGE2A –APRIL 2017–REVISED FEBRUARY 2018

www.ti.com.cn

6.7 Safety-Related Certifications

VDE UL CQC

Certified according to DIN V VDE V 0884-11:2017-01

Recognized under UL 1577

Component Recognition Program

Certified according to GB 4943.1-

2011

Basic Insulation Maximum Transient Overvoltage, 3535 V

;

Maximum Repetitive Peak Voltage, 792 V

;

Maximum Surge Isolation Voltage, 2719 V

Single protection, 2500 V

RMS

Basic Insulation,

Altitude ≤ 5000 m,

Tropical Climate 320-V

RMS

maximum working voltage

Certification Number: 40016131 Certification Number: E181974

Certification Number:

CQC18001186974

(1) The maximum safety temperature, T

, has the same value as the maximum junction temperature, T

, specified for the device. The I

and P

parameters represent the safety current and safety power respectively. The maximum limits of I

and P

should not be

exceeded. These limits vary with the ambient temperature, T

The junction-to-air thermal resistance, R

θJA

, in the Thermal Information table is that of a device installed on a high-K test board for

leaded surface-mount packages. Use these equations to calculate the value for each parameter:

= T

+ R

θJA

× P, where P is the power dissipated in the device.

J(max)

= T

+ R

θJA

× P

, where T

J(max)

is the maximum allowed junction temperature.

= I

× V

, where V

is the maximum input voltage.

6.8 Safety-Limiting Values

Safety limiting intends to minimize potential damage to the isolation barrier upon failure of input or output circuitry.

PARAMETER TEST CONDITIONS SIDE MIN TYP MAX UNIT

Safety output supply

current

(1)

θJA

= 98.0ºC/W, VDDA/B = 12 V, T

25°C, T

= 150°C

See 图 2

DRIVER A,

DRIVER B

50 mA

θJA

= 98.0ºC/W, VDDA/B = 25 V, T

25°C, T

= 150°C

DRIVER A,

DRIVER B

24 mA

Safety supply power

(1)

θJA

= 98.0ºC/W, T

= 25°C, T

= 150°C

See 图 3

INPUT 0.05

DRIVER A 0.60

DRIVER B 0.60

TOTAL 1.25

Safety temperature

(1)

150 °C

UCC20225

www.ti.com.cn

ZHCSGE2A –APRIL 2017–REVISED FEBRUARY 2018

6.9 Electrical Characteristics

VCCI

= 3.3 V or 5 V, 0.1-µF capacitor from VCCI to GND, V

VDDA

= V

VDDB

= 12 V, 1-µF capacitor from VDDA and VDDB to

VSSA and VSSB, T

= –40°C to +125°C, (unless otherwise noted)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

SUPPLY CURRENTS

VCCI

VCCI quiescent current DISABLE = VCCI 1.5 2.0 mA

VDDA

VDDB

VDDA and VDDB quiescent current DISABLE = VCCI 1.0 1.8 mA

VCCI

VCCI operating current

(f = 500 kHz) current per channel,

OUT

= 100 pF

2.5 mA

VDDA

VDDB

VDDA and VDDB operating current

(f = 500 kHz) current per channel,

OUT

= 100 pF

2.5 mA

VCCI SUPPLY UNDERVOLTAGE LOCKOUT THRESHOLDS

VCCI_ON

Rising threshold VCCI_ON 2.55 2.7 2.85 V

VCCI_OFF

Falling threshold VCCI_OFF 2.35 2.5 2.65 V

VCCI_HYS

Threshold hysteresis 0.2 V

VDD SUPPLY UNDERVOLTAGE LOCKOUT THRESHOLDS

VDDA_ON,

VDDB_ON

Rising threshold VDDA_ON,

VDDB_ON

8.3 8.7 9.2 V

VDDA_OFF,

VDDB_OFF

Falling threshold VDDA_OFF,

VDDB_OFF

7.8 8.2 8.7 V

VDDA_HYS,

VDDB_HYS

Threshold hysteresis 0.5 V

PWM AND DISABLE

PWMH

, V

DISH

Input high voltage 1.6 1.8 2 V

PWML

, V

DISL

Input low voltage 0.8 1 1.2 V

PWM_HYS

DIS_HYS

Input hysteresis 0.8 V

PWM

Negative transient, ref to GND, 50

ns pulse

Not production tested, bench test

only

–5 V

OUTPUT

OA+

, I

OB+

Peak output source current

VDD

= 10 µF, C

LOAD

= 0.18 µF, f

= 1 kHz, bench measurement

4 A

OA-

, I

OB-

Peak output sink current

VDD

= 10 µF, C

LOAD

= 0.18 µF, f

= 1 kHz, bench measurement

6 A

OHA

, R

OHB

Output resistance at high state

OUT

= –10 mA, T

= 25°C, R

OHA

OHB

do not represent drive pull-

up performance. See t

RISE

Switching Characteristics and

Output Stage for details.

5 Ω

OLA

, R

OLB

Output resistance at low state I

OUT

= 10 mA, T

= 25°C 0.55 Ω

OHA

, V

OHB

Output voltage at high state

VDDA

, V

VDDB

= 12 V, I

OUT

= –10

mA, T

= 25°C

11.95 V

OLA

, V

OLB

Output voltage at low state

VDDA

, V

VDDB

= 12 V, I

OUT

= 10

mA, T

= 25°C

5.5 mV

DEADTIME AND OVERLAP PROGRAMMING

Dead time

Pull DT pin to VCCI 0 ns

DT pin is left open, min spec

characterized only, tested for

outliers

8 15 ns

= 20 kΩ 160 200 240 ns

剩余45页未读，继续阅读

不觉明了

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