Eu2+掺杂Ba3Si6O9N4磷光体的制备与发光特性研究
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"Ba3Si6O9N4：Eu2+磷的制备及其发光性质的表征"
本文主要探讨了一种新型的荧光磷光体——Ba3Si6O9N4：Eu2+，它通过两步合成工艺制备而成，其中BaSiO3作为前驱体。这种磷光体在高温度固态反应下形成，并通过X射线衍射（XRD）和荧光光谱仪光度计（PL）进行了表征。研究结果表明，两步法有助于改善Ba3Si6O9N4：Eu2+磷光体的相纯度并提高其结晶度。
在XRD分析中，观察到两步法合成的磷光体具有更优的晶相结构，这表明这种方法可以有效地促进目标化合物的形成。同时，荧光光谱分析揭示了Eu2+掺杂对磷光体发光性质的影响。当Eu2+的掺杂量为9%时，样品获得了最大荧光强度，这表明存在一个优化的掺杂浓度，以实现最佳发光性能。
文章还涉及了浓度猝灭现象的计算，通过计算得出猝灭距离为18.71埃。浓度猝灭是指荧光物质中激活剂浓度增加导致荧光强度下降的现象，通常由于非辐射跃迁或能量转移引起。在这个距离内，Eu2+离子之间的相互作用可能导致了荧光效率的降低。
此外，对比两种不同合成方法（两步法和高温固态法）的发射光谱，可以观察到它们的发射特性差异。这些差异可能源于合成过程中晶格参数、缺陷状态以及Eu2+离子在晶格中的位置等因素的改变。进一步的研究可能涉及到对这些光谱特性的详细解释，以理解Eu2+离子在Ba3Si6O9N4基质中的能级结构和能量传递机制。
Ba3Si6O9N4：Eu2+磷光体因其独特的荧光性质，特别是在蓝绿光区域的发射，可能有潜力应用于各种光电子设备，如LED照明和显示技术。这些磷光体的制备方法和发光性能的研究对于优化材料性能和开发新型高效发光材料具有重要意义。通过调整掺杂浓度和合成条件，可以进一步探索其在节能照明和光学通信等领域的应用潜力。
Preparation of Ba
3
Si
6
O
9
N
4
:Eu
2+
Phosphor and
Characterization of their Luminescence Properties
LUO Dong, WANG Le*, LI Yang-Hui, XU Guo-Tang, PAN Hua-Yan, LIANG Pei,
CHEN Ru-Biao, ZHANG Hong
Laboratory of Optoelectronic Materials and Devices,
College of Optics and Electronic Science and Technology, China Jiliang University, Hangzhou 310018, China
*Corresponding author. Tel.: 0571-86875686 E-mail address: kingbo66@163.com
Abstract—Bluish-green Ba
3
Si
6
O
9
N
4
:Eu
2+
phosphors were
synthesized by two-step synthesis processes using BaSiO
3
as a
precursor. The samples were prepared by high-temperature
solid-state reaction, and investigated by X-ray diffraction
(XRD) and fluorescence spectrometer photometer (PL)
respec-tively. The results of XRD illustrated that two-step
method was beneficial to improve phases of Ba
3
Si
6
O
9
N
4
:Eu
2+
phosphor and obtain higher crystallinity. The maximum
luminescent intensi-ty of two-step process and high
temperature solid-state method was obtained, when Eu
2+
doping amount was 9%. After calcul-ation, the distance of
quenching was determined at 18.71 Ǻ. Compared the emission
spectrum of two-step process(the emission peak at 498 nm)
with high-temperature solid phase method (the emission peak
at 517 nm) under the excitation of 330 nm, an apparent
electrophoresis of the blue shift was existed. And the emission
peak of two-step process was closer to the value of theoretical
(480nm). The results of energy spectrum analysis clarified that
the elements content of two-step method was closer to the
theoretical stoichiometry ratio, which indicated that two-step
preparation of Ba
3
Si
6
O
9
N
4
: Eu
2+
phosphor was an effective
way to reduce the lattice defects.
Keywords—High temperature solid-state reaction;
Oxynitride phosphor; Concentration quenching; Lattice defects
I. INTRODUCTION
White light-emitting diodes (White LEDs) is expected to
be one of the new solid-state light sources owing to their
many advantages in energy efficiency, environment friendly
and long lifetime compared to traditional light sources.
Currently, the commercialized White LEDs are mainly
fab-ricated by blue-emitting chips covered with phosphor
YAG: Ce
3+
.However, low emission intensity in the red area
of this phosphor results in low color rendering index
[1-3]
.Excited by ultraviolet chip tricolor (red, green, blue)
phosphors to obtain the white LED can effectively improve
the performance of the light emitting phosphors
[4]
.
In the three-color phosphor, the silicon nitrogen-based
compounds is regarded as the new ideal material for the
preparation of White LEDs
[5-7]
due to their excellent
properties, such as outstanding chemical stability, wide
spec-tral range and so on. Common silicon nitride-based
phosph-ors are MSi
2
O
2
N
2
(M=Ca,Sr,Ba)
[8-11]
, SiAlON
[12]
,
M
2
Si
5
N
8
(M=Ca, Sr,Ba)
[13-15]
, Ba
3
Si
6
O
9
N
4
[16]
and so on. The
tradition-al method for producing silicon nitride-based
phosphors is high-temperature solid-phase method, but
serious agglome-ration and low purity existed, which
greatly affect phos-phors’ crystallinity and luminescent
properties
[17]
. Further-more, the phosphors synthesized of
two-step approach by previously synthetic precursor
(silicates), and then the final product is obtained, which
cause the crystallinity and lumin-escent properties of the
phosphors can be improved. Yun Bong-Goo
[18]
successfully
synthesized the BaSi
2
O
2
N
2
: Eu
2+
phosphor by two-step
approach with Ba
2
SiO
4
as a precursor. According to his
research, the crystallinity and the emission intensity had
been improved. Fang Ying-Chien
[19]
studied the two-step
preparation technology of the SrSi
2
O
2
N
2
:Eu
2+
phosphors
and found that two-step can effectively improve the purity of
the phosphor. The color-rending index of White LEDs
fabricated by the MSi
2
O
2
N
2
(M=Ca,Sr,Ba) phosphors
significantly reduced at low temperature, but the Ba
3
Si
6
O
9
N
4
phosphors began to attract more and more scholars’ attention
due to their high stability and high color temperature.
Currently, few researches focus on Ba
3
Si
6
O
9
N
4
phosp-hors. In order to explore the emitting characteristics of
the Ba
3
Si
6
O
9
N
4
phosphors prepared by two-step method, it
was studied that the Ba
3
Si
6
O
9
N
4
phosphor was prepared by
two-step method with BaSiO
3
as a precursor in this paper.
And this phosphor has high crystallinity, high color
temperature and high luminous efficiency. Then, it is
necessary to study the effect of different doping
concentration on the luminescence properties of phosphors
and compare the difference of the phosphors prepared by
traditional high-temperature solid-phase method and
two-step method.
II. EXPERIMENTAL
A. Preparation of Ba
3
Si
6
O
9
N
4
:Eu
2+
Phosphor
Ba
3
Si
6
O
9
N
4
:Eu
2+
was prepared by two-step method using
BaSiO
3
as a precursor. The raw material of BaCO
3
(99.9%)
2014 International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale (3M-NANO)
27-31 October 2014, Taipei
978-1-4799-7923-3/14/$31.00 ©2014 IEEE
44
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