Highly efficient Nd:(La
x
Gd
1−x
)
3
Gd
5
O
12
laser operation
at 1.33 μm
Zhitai Jia (贾志泰)
1,2
, Yanru Yin (尹延如)
1
, He Yang (杨 合)
1
, Baitao Zhang (张百涛)
1
,
Jingliang He (何京良)
1,2
, Mauro Tonelli
3
, and Xutang Tao (陶绪堂)
1,2,
*
1
State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
2
Key Laboratory of Functional Crystal Materials and Device (Shandong University, Ministry of Education),
Jinan 250100, China
3
NEST-CNR and Dipartimento di Fisica, Università di Pisa, Largo Pontecorvo 3, 56127 Pisa, Italy
*Corresponding author: txt@sdu.edu.cn
Received October 12, 2015; accepted November 26, 2015; posted online January 26, 2016
The continuous wave (CW) and passively Q-switched (PQS) performances of diode-pumped
Nd:ðLa
x
Gd
1−x
Þ
3
Gd
5
O
12
(Nd:LaGGG) at 1.33 μm are achieved for the first time to our knowledge. The maximum
CW output power of 5.1 W is obtained with the optical-optical conversion efficiency of 25.3% and the slope
efficiency of 26.6%. In the PQS operation, by using the V
3þ
:YAG crystal as the saturable absorber, the maxi-
mum average output power, shortest pulse width, largest pulse energy, and highest peak power are measured to
be 1.1 W, 27.54 ns, 75.78 μJ, and 2.44 kW, respectively.
OCIS codes: 140.3530, 320.5550.
doi: 10.3788/COL201614.021405.
Diode-pumped solid-state lasers possess the merits of com-
pactness, high efficiency, reliability, and good beam qual-
ity that have enabled them to have extensive applications
in industry, medicine, and scientific studies
[1]
. Consider-
able efforts have been devoted to search for good solid-
state gain media in which Nd:Gd
3
Ga
5
O
12
(Nd:GGG)
has been proved to be an excellent candidate for laser ap-
plications owing to its good mechanical properties, large
thermal conductivity, and high damage threshold
[2,3]
.As
an isomorph of GGG crystal, a Nd:LaGGG crystal with
aNd
3þ
doping level of 1 at. % and a La
3þ
concentration
of 1.6 at. % has been grown by the Cz method
[4]
. In com-
parison with the Nd:GGG crystal, the Nd:LaGGG crystal
should have a lower melting temperature and a higher
Nd
3þ
segregation coefficient owing to the larger radius
of La
3þ
ions than that of Gd
3þ
ions
[5]
, which would benefit
the crystal growth. Furthermore, the Nd:LaGGG crystal
can possess wider inhomogeneous broadened spectra than
that of Nd:GGG crystal because of the multicenter distri-
bution of Nd
3þ
ions and more complex structure of the
host material
[4]
, which would be favorable for mode-
locking operation. The crystal growth, the thermal and
spectral properties, as well as the laser properties at
1062 nm of Nd:LaGGG crystal have been investigated
[4,6]
.
However, to our knowledge, no work on 1.3 μm
Nd:LaGGG lasers has been reported yet.
The continuous wave (CW) and passively Q-switched
(PQS) laser properties of some Nd-doped gallium-based
garnets at 1.3 μm have been widely studied, as shown
in Table
1
[7–12]
, in which the Nd:LGGG crystal doped with
0.66 at. % Lu
3þ
ions owns the highest output power on
CW (3.7 W) and PQS (0.75 W) operation. Concerni ng
the saturable absorber applied in this work, we selected
the V
3þ
:YAG crystal because it has good physical and
optical performance around 1.3 μm in comparison with
the co-doped crystals and the semiconductor saturable
absorber mirror (SESAM)
[9]
.
In this Letter, we report CW and PQS laser operations
at 1.33 μm with the Nd:LaGGG crystal. Under the ab-
sorbed pump power of 20.16 W, the highest CW output
power of 5.1 W was achieved with the optical-optical con-
version efficiency of 25.3% and the slope efficiency of 26.6%.
By using V
3þ
:YAG crystal as the saturable absorber, we
demonstrated the PQS Nd:LaGGG laser with the maxi-
mum average output power of 1.1 W.
The experimental arrangement of the diode-pumped
Q-switched Nd:LaGGG crystal at 1.33 μm is shown sche-
matically in Fig.
1. The pump source was a fiber-coupled
808 nm diode laser with a core diameter of 0.6 mm and
numerical aperture of 0.22. Its radiation was coupled
into the laser crystal by a focusing optical system with a
25 mm focal length and a ratio of 1∶1. The Nd:LaGGG
crystal was cut along the h111i direction with dimensions
of 4×4×8ðmmÞ. It was wrapped with indium foil and
mounted in copped block cooled by water at a temperature
of 20°C. The input concave mirror M1 with the radius of
curvature 800 mm was antireflection (AR) coated at
808 nm on the plane side, high reflection (HR, R > 99.8%)
at 1330 nm, and high transmission (HT, T > 95%)at
808 nm on the concave side. The output mirror M2 had
a coating with different transmissions (T
oc
¼ 3%,8%,
and 15%) at 1330 nm and HT at 1062 nm to suppress
the oscillation of 1.06 μm laser. The V
3þ
:YAG saturable
absorber with the dimensions of 3 × 3 × 2.83 ðmmÞ was
placed next to output mirror M2 to realize the Q-switching
operation. Its initial transmission at 1.3 μm was measured
to be about 95%. The CW and PQS laser output power was
detected by the laser power meter (Fieldmax II, coherent).
COL 14(2), 021405(2016) CHINESE OPTICS LETTERS February 10, 2016
1671-7694/2016/021405(4) 021405-1 © 2016 Chinese Optics Letters