"Samsung DDR4规格变更通知 - 8G_B_Feb_17-0.pdf"

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The document "8G_B_DDR4_Samsung_Spec_Rev2_1_Feb_17-0.pdf" provides specifications for the Samsung 8GB DDR4 memory module with the part number K4A8G045WBRev. 2.1, dated February 2017. Samsung Electronics reserves the right to change products, information, and specifications without notice, highlighting that the information provided is for reference purposes only and is given on an "AS IS" basis, without warranties of any kind. The document emphasizes that all information discussed within it remains the sole and exclusive property of Samsung Electronics, and no license of any patent, copyright, mask work, trademark, or any other intellectual property is granted or implied. This underscores the importance of respecting Samsung's proprietary information and ensuring that it is not used or distributed without authorization. The specifications outlined in the document include details about the memory module's capacity, type (DDR4), speed, organization, interface, operating voltage, and physical characteristics. These specifications are essential for understanding the capabilities and compatibility of the memory module, particularly in the context of computer systems and hardware that require reliable and high-performance memory solutions. Overall, the document serves as a comprehensive guide for individuals and organizations interested in utilizing the Samsung 8GB DDR4 memory module in their systems. By providing detailed specifications and pertinent information, Samsung Electronics aims to support the integration and use of their memory products in various applications, ensuring optimal performance and reliability. It is important for users to refer to the most recent version of the document for the most up-to-date information and specifications, as Samsung Electronics may update or revise the product details as technology advances and evolves.

- 12 -

datasheet DDR4 SDRAMK4A8G085WB

K4A8G045WB

Rev. 2.1

6. Absolute Maximum Ratings

6.1 Absolute Maximum DC Ratings

[ Table 4 ] Absolute Maximum DC Ratings

NOTE :

1. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the

device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions

for extended periods may affect reliability

2. Storage Temperature is the case surface temperature on the center/top side of the DRAM. For the measurement conditions, please refer to JESD51-2 standard.

3. VDD and VDDQ must be within 300 mV of each other at all times;and VREFCA must be not greater than 0.6 x VDDQ, When VDD and VDDQ are less than 500 mV; VREFCA

may be equal to or less than 300 mV

4. VPP must be equal or greater than VDD/VDDQ at all times.

5. Overshoot area above 1.5 V is specified in section 8.3.4, 8.3.5 and section 8.3.6.

6.2 DRAM Component Operating Temperature Range

[ Table 5 ] Temperature Range

NOTE :

1. Operating Temperature T

OPER

is the case surface temperature on the center/top side of the DRAM.

2. The Normal Temperature Range specifies the temperatures where all DRAM specifications will be supported. During operation, the DRAM case temperature must be main-

tained between 0-85C under all operating conditions

3. The Industrial Temperature Range specifies the temperatures where all DRAM specifications will be supported. During operation, the DRAM case temperature must be main-

tained between -40-95C under all operating conditions

4. Some applications require operation of the Extended Temperature Range between 85C and 95C case temperature. Full specifications are guaranteed in this range, but the

following additional conditions apply:

a) Refresh commands must be doubled in frequency, therefore reducing the refresh interval tREFI to 3.9us.

b) If Self-Refresh operation is required in the Extended Temperature Range, then it is mandatory to use the Manual Self-Refresh mode with Extended Temperature Range

capability (MR2 A6 = 0

and MR2 A7 = 1

7. AC & DC Operating Conditions

[ Table 6 ] Recommended DC Operating Conditions

NOTE :

1. Under all conditions VDDQ must be less than or equal to VDD.

2. VDDQ tracks with VDD. AC parameters are measured with VDD and VDDQ tied together.

3. DC bandwidth is limited to 20MHz.

Symbol Parameter Rating Units NOTE

VDD

Voltage on VDD pin relative to Vss

-0.3 ~ 1.5 V 1,3

VDDQ

Voltage on VDDQ pin relative to Vss

-0.3 ~ 1.5 V 1,3

VPP

Voltage on VPP pin relative to Vss

-0.3 ~ 3.0 V 4

IN,

OUT

Voltage on any pin except VREFCA relative to Vss

-0.3 ~ 1.5 V 1,3,5

STG

Storage Temperature

-55 to +100 °C 1,2

Symbol Parameter rating Unit NOTE

OPER

Operating Temperature Range

Normal 0 to 95 C 1, 2, 4

Industrial -40 to 95 C 1, 3, 4

Symbol Parameter

Rating

Unit NOTE

Min. Typ. Max.

VDD Supply Voltage 1.14 1.2 1.26 V 1,2,3

VDDQ Supply Voltage for Output 1.14 1.2 1.26 V 1,2,3

VPP Peak-to-Peak Voltage 2.375 2.5 2.75 V 3

- 13 -

datasheet DDR4 SDRAMK4A8G085WB

K4A8G045WB

Rev. 2.1

8. AC & DC Input Measurement Levels

8.1 AC & DC Logic Input Levels for Single-ended Signals

[ Table 7 ] Single-ended AC & DC input Levels for Command and Address

NOTE :

1. See “Overshoot and Undershoot Specifications” .

2. The AC peak noise on V

REFCA may not allow VREFCA to deviate from VREFCA(DC) by more than ± 1% VDD (for reference : approx. ± 12mV)

3. For reference : approx. V

DD/2 ± 12mV

8.2 AC and DC Input Measurement Levels: V

REF

Tolerances

The DC-tolerance limits and ac-noise limits for the reference voltages V

REFCA

is illustrated in Figure 1. It shows a valid reference voltage V

REF

(t) as a

function of time. (V

REF

stands for V

REFCA

and V

REFDQ

likewise).

REF

(DC) is the linear average of V

REF

(t) over a very long period of time (e.g. 1 sec). This average has to meet the min/max requirement in Table 7. Fur-

thermore V

REF

(t) may temporarily deviate from V

REF

(DC) by no more than ± 1% V

Figure 1. Illustration of V

REF

(DC) tolerance and VREF ac-noise limits

The voltage levels for setup and hold time measurements V

(AC), V

(DC), V

(AC) and V

(DC) are dependent on V

REF

" shall be understood as V

REF

(DC), as defined in Figure 1.

This clarifies, that DC-variations of V

REF

affect the absolute voltage a signal has to reach to achieve a valid high or low level and therefore the time to

which setup and hold is measured. System timing and voltage budgets need to account for V

REF

(DC) deviations from the optimum position within the

data-eye of the input signals.

This also clarifies that the DRAM setup/hold specification and derating values need to include time and voltage associated with V

REF

ac-noise. Timing

and voltage effects due to ac-noise on V

REF

up to the specified limit (+/-1% of V

) are included in DRAM timings and their associated deratings.

Symbol Parameter

DDR4-1600/1866/2133/2400 DDR4-2666

Unit NOTE

Min. Max. Min. Max.

IH.CA(DC75) DC input logic high VREFCA+ 0.075 VDD TBD TBD V

VIL.CA(DC75) DC input logic low VSS VREFCA-0.075 TBD TBD V

IH.CA(AC100) AC input logic high VREF + 0.1 Note 2 TBD TBD V 1

IL.CA(AC100) AC input logic low Note 2 VREF - 0.1 TBD TBD V 1

VREFCA(DC) Reference Voltage for ADD, CMD inputs 0.49*VDD 0.51*VDD TBD TBD V 2,3

voltage

time

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