USB Type-C端口保护器TI-TPD4S311A：VBUS过压与ESD防护

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"TI-TPD4S311A.pdf" TI公司的TPD4S311A是一款专为USB Type-C端口设计的保护器，旨在解决VBUS短路过压和IEC 61000-4-2静电放电(ESD)保护问题。这款器件的主要特点包括： 1. **VBUS短路过压保护**：TPD4S311A提供4个通道的VBUS短路过压保护，适用于CC1、CC2、SBU1和SBU2引脚，能承受高达24VDC的电压。 2. **IEC61000-4-2 ESD保护**：同样包含4个通道的IEC61000-4-2 ESD保护，覆盖CC1、CC2、SBU1和SBU2，确保设备免受静电冲击的影响。 3. **VCONN支持**：CC1和CC2过压保护场效应晶体管（FET）支持VCONN通过电流，对于TPD4S311支持400mA，而TPD4S311A则提升至600mA，满足更高的电源需求。 4. **浪涌保护**：增强型保护功能包括CC引脚上的±35V浪涌保护（仅限TPD4S311A）以及SBU引脚上的±30V浪涌保护（仅限TPD4S311A），增强系统对瞬时高电压的抵抗力。 5. **集成CC无电电池电阻器**：内建电阻器设计，用于处理移动设备中无电电池的情况，提高设备在异常情况下的兼容性和稳定性。 6. **紧凑封装**：采用1.69mm×1.69mm的DSBGA封装，适合空间有限的应用场景。 7. **应用场景广泛**：适用于各种设备，包括台式电脑/主板、笔记本电脑、Chromebook和Windows on Arm (WOA)设备、集线站、端口/线缆适配器、加密狗以及智能手机等。 TPD4S311A的主要作用是保护USB Type-C端口免受不合规或机械故障造成的损害。例如，某些USB Type-C PD适配器可能会在VBUS线上施加超过20V的电压，这超出了规范允许的范围。此外，USB Type-C连接器的小型化设计使其容易因扭曲、滑动或碎屑导致引脚短路。TPD4S311A通过内置的高压FET，在检测到过压情况时自动断开，从而保护系统不受损害。同时，它还提供了系统级的IEC 61000-4-2 ESD保护，确保外部引脚在遭受静电放电时仍能保持安全。 TPD4S311A是USB Type-C端口安全性和可靠性的关键组件，有助于预防潜在的硬件损坏，延长设备寿命，并确保用户数据的安全。

7.4 Recommended Operating Conditions (continued)

over operating free-air temperature range (unless otherwise noted)

MIN NOM MAX UNIT

VCONN

CONN

Current

Current flowing into CC1/2 and flowing out of

C_CC1/2,

4.5 ≤ CCx ≤ 5.5, T

≤ 85 ℃ (TPD4S311)

400

(1)

Current flowing into CC1/2 and flowing out of

C_CC1/2,

4.5 ≤ CCx ≤ 5.5, T

≤ 105 ℃ (TPD4S311A)

600 mA

Current flowing into CC1/2 and flowing out of

C_CC1/2,

4.5 ≤ CCx ≤ 5.5, T

≤ 70 ℃ (TPD4S311A)

1.2 A

External Components

(2)

FLT Pull-up resistance 1.7 300

kΩ

VBIAS capacitance

(3)

0.1 µF

VPWR Capacitance 0.3 1 µF

(1) V

conn

current loading beyond the values listed in Recommended Operating Conditions may degrade the operating lifetime of the

device.

(2) For recommended values for capacitors and resistors, the typical values assume a component placed on the board near the pin.

Minimum and maximum values listed are inclusive of manufacturing tolerances, voltage derating, board capacitance, and temperature

variation. The effective value presented should be within the minimum and maximums listed in the table.

(3) The VBIAS pin requires a minimum 35-VDC rated capacitor. A 50-VDC rated capacitor is recommended to reduce capacitance

derating.

See the VBIAS Capacitor Selection section for more information on selecting the VBIAS capacitor.

7.5 Thermal Information

THERMAL METRIC

(1)

TPD4S311

UNITYBF DSBGA

16 PINS

θJA

Junction-to-ambient thermal resistance 84.0 °C/W

θJC(top)

Junction-to-case (top) thermal resistance 0.5 °C/W

θJB

Junction-to-board thermal resistance 21.2 °C/W

Junction-to-top characterization parameter 0.3 °C/W

Junction-to-board characterization parameter 21.1 °C/W

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

7.6 Electrical Characteristics

over operating free-air temperature range (unless otherwise noted)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

CC OVP Switches

On Resistance of CC OVP FETs

CCx = 5.5 V, T

≤ 85 ℃ (TPD4S311)

378 550

mΩ

CCx = 5.5 V, T

≤ 85 ℃ (TPD4S311A)

232 405

mΩ

ON_CC

Equivalent on Capacitance

Capacitance from CCx or C_CCx to

GND when device is powered. Measure

VC_CCx

CCx

= 0 V to 1.2 V, f = 400

kHz.

45 74 120 pF

RD_DB

Dead Battery Pull-Down Resistors (only

present when device is unpowered)

C_CCx

= 2.6 V 4.1 5.1 6.1

kΩ

VTH_DB

Threshold voltage of the pull-down FET

in series with RD during dead battery

C_CCx

= 80 μA

0.5 0.9 1.2 V

OVPCC

OVP Threshold on CC Pins

Place 5.5 V on C_CCx. Step up C_CCx

until FLT pin is asserted. Put 100-mA

load through the CC FET and see the

FET shuts off.

5.75 6.0 6.2 V

OVPCC_HYS

Hysteresis on CC OVP

Place 6.5 V on C_CCx. Step down the

voltage on C_CCx until the FLT pin is

deasserted. Measure difference

between rising and falling OVP

threshold for C_CCx.

50 mV

TPD4S311, TPD4S311A

ZHCSLP7C – DECEMBER 2019 – REVISED FEBRUARY 2021

www.ti.com.cn

6 Submit Document Feedback

Product Folder Links: TPD4S311 TPD4S311A

7.6 Electrical Characteristics (continued)

over operating free-air temperature range (unless otherwise noted)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

On Bandwidth Single Ended (-3dB)

Measure the -3 dB bandwidth from

C_CCx to CCx. Single ended

measurement, 50-Ω system. Vcm = 0.1

V to 1.2 V.

100 MHz

STBUS_CC

Short-to-VBUS tolerance on the CC pins

Hot-Plug C_CCx with a 1 meter USB

Type C Cable, place a 30-Ω load on

CCx

24 V

STBUS_CC_CLAMP

Short-to-VBUS System-Side Clamping

Voltage on the CC pins (CCx)

Hot-Plug C_CCx with a 1 meter USB

Type C Cable. Hot-Plug voltage

C_CCx = 24 V. VPWR = 3.3 V. Place

a 30-Ω load on CCx.

8 V

SBU OVP Switches

On Resistance of SBU OVP FETs

SBUx = 3.6 V. –40°C ≤ TJ ≤ +85°C

4 6.5

Ω

ON_SBU

Equivalent on Capacitance

Capacitance from SBUx or C_SBUx to

GND when device is powered. Measure

at V

C_SBUx

SBUx

= 0.3 V to 4.2 V.

6 pF

OVPSBU

OVP Threshold on SBU Pins

Place 3.6 V on C_SBUx. Step up

C_SBUx until FLT pin is asserted.

4.35 4.5 4.7 V

OVPSBU_HYS

Hysteresis on SBU OVP

Place 5 V on C_CCx. Step down the

voltage on C_CCx until the FLT pin is

deasserted. Measure difference

between rising and falling OVP

threshold for C_SBUx.

50 mV

On Bandwidth Single Ended (-3dB)

Measure the –3 dB bandwidth from

C_SBUx to SBUx. Single ended

measurement, 50-Ω system. Vcm = 0.1

V to 3.6 V.

900 MHz

TALK

Crosstalk

Measure crosstalk at f = 1 MHz from

SBU1 to C_SBU2 or SBU2 to C_SBU1.

Vcm1 = 3.6 V, Vcm2 = 0.3 V. Terminate

open sides to 50

Ω.

-70 dB

STBUS_SBU

Short-to-VBUS tolerance on the SBU

pins

Hot-Plug C_SBUx with a 1 meter USB

Type C Cable. Put a 100-nF capacitor

in series with a 40-Ω resistor to GND

on SBUx.

24 V

STBUS_SBU_CLAMP

Short-to-VBUS System-Side Clamping

Voltage on the SBU pins (SBUx)

Hot-Plug C_SBUx with a 1 meter USB

Type C Cable. Hot-Plug voltage

C_SBUx = 24 V. VPWR = 3.3 V. Put a

150-nF capacitor in series with a 40-

resistor to GND on SBUx.

8 V

Power Supply and Leakage Currents

PWR_UVLO

PWR

Under Voltage Lockout

Place 1 V on VPWR and raise voltage

until SBU or CC FETs turn-on.

2.1 2.3 2.5 V

PWR_UVLO_HYS

PWR

UVLO Hysteresis

Place 3 V on VPWR and lower voltage

until SBU or CC FETs turnoff; measure

difference between rising and falling

UVLO to calculate hysteresis.

100 150 200 mV

VPWR

PWR

supply current

VPWR = 3.3 V (typical), VPWR = 4.5 V

(maximum). –40°C ≤ T

≤ +85°C.

90 135 µA

C_CC_LEAK

Leakage current for C_CCx pins when

device is powered

VPWR = 3.3 V, V

C_CCx

= 3.6 V, CCx

pins are floating, measure leakage

current into C_CCx pins.

5 µA

C_SBU_LEAK

Leakage current for C_SBUx pins when

device is powered

VPWR = 3.3 V, VC_SBUx = 3.6 V, SBUx

pins are floating, measure leakage

current into C_SBUx pins. Result should

be same if SBUx side is biased and

C_SBUx is left floating.-40°C

≤ T

≤

+85°C

3 µA

C_CC_LEAK_OVP

Leakage current for C_CCx pins when

device is in OVP

VPWR = 0 V or 3.3 V, V

C_CCx

= 24 V,

CCx pins are set to 0 V, measure

leakage current into C_CCx pins.

1200 µA

www.ti.com.cn

TPD4S311, TPD4S311A

ZHCSLP7C – DECEMBER 2019 – REVISED FEBRUARY 2021

Submit Document Feedback

Product Folder Links: TPD4S311 TPD4S311A

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如何利用TPD4S311A设计USB Type-C端口保护电路以抵御ESD和过压？

如何设计一个USB Type-C端口保护电路以防止过压和ESD损害？请以TPD4S311A为例进行说明。

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