UCC21222-Q1：AECQ100标准双通道隔离驱动器，-40°C至150°C工作范围

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TI-UCC21222-Q1是一款高性能的汽车级隔离式双通道栅极驱动器，专为满足严苛的电子应用需求而设计。这款产品主要特点如下： 1. **AECQ100标准兼容**：该驱动器符合AECQ100一级标准，确保在高温和电磁兼容性方面具备优异性能。此外，它还通过了人体放电模式（HBM）静电放电（ESD）测试，达到H2等级，并具备CDMESD分类C6，对电子设备的抗干扰能力有所保障。 2. **宽工作范围**：UCC21222-Q1适用于-40°C至150°C的极端结温环境，适合各种工业和汽车电子应用。 3. **灵活配置**：支持多种驱动配置，包括双路低侧、双路高侧或半桥结构，适应不同的电路布局。 4. **电流处理能力**：驱动器能够提供高达4A的峰值拉电流和6A的峰值灌电流输出，确保强健的负载驱动能力。 5. **宽输入电压范围**：输入电压支持3V至5.5V的VCCI，提供了较大的灵活性以适应不同电源系统。 6. **高输出电压**：最大可驱动高达18V的VDD电源，确保驱动信号的高效传输。 7. **高速开关特性**：驱动器具有28ns典型传播延迟，10ns最小脉冲宽度，确保快速响应和精确控制。同时，最大延迟匹配度为5ns，最小脉宽失真限制在5.5ns内，保持信号质量。 8. **输入兼容性**：TTL和CMOS输入接口，方便与不同逻辑电路连接。 9. **内置抗尖峰滤波器**：保护输入免受瞬态冲击，提高系统的稳定性。 10. **安全功能**：包括死区时间可通过电阻编程，防止短路和电磁耦合，以及集成的UVLO（欠电压锁定）保护机制，确保在电源供应异常时自动关闭。 11. **I/O耐压**：I/O接口能承受-2V的电压，提高了组件的安全性和可靠性。总结来说，TI-UCC21222-Q1是一款功能强大且适应性强的隔离驱动器，适用于对电磁兼容性、高电流处理、快速响应和安全性有严格要求的汽车电子系统。

UCC21222-Q1

ZHCSHQ7 –FEBRUARY 2018

www.ti.com.cn

(1) Current direction in the testing conditions are defined to be positive into the pin and negative out of the specified terminal (unless

otherwise noted).

(2) Parameters with only a typical value are provided for reference only, and do not constitute part of TI's published device specifications for

purposes of TI's product warranty.

6.9 Electrical Characteristics

VCCI

= 3.3 V or 5.0 V, 0.1-µF capacitor from VCCI to GND and 1-µF capacitor from VDDA/B to VSSA/B, V

VDDA

= V

VDDB

= 12

V, 1-µF capacitor from VDDA and VDDB to VSSA and VSSB, DT pin tied to VCCI, C

= 0 pF, T

= –40°C to +150°C unless

otherwise noted

(1)(2)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

SUPPLY CURRENTS

VCCI

VCCI quiescent current V

INA

= 0 V, V

INB

= 0 V 1.5 2.0 mA

VDDA

, I

VDDB

VDDA and VDDB quiescent

current

INA

= 0 V, V

INB

= 0 V 1.0 1.8 mA

VCCI

VCCI operating current (f = 500 kHz) current per channel 2.5 mA

VDDA

, I

VDDB

VDDA and VDDB operating

current

(f = 500 kHz) current per channel,

OUT

= 100 pF,

VDDA

, V

VDDB

= 12 V

2.5 mA

VCC SUPPLY VOLTAGE UNDERVOLTAGE THRESHOLDS

VCCI_ON

UVLO Rising threshold 2.55 2.7 2.85 V

VCCI_OFF

UVLO Falling threshold 2.35 2.5 2.65 V

VCCI_HYS

UVLO Threshold hysteresis 0.2 V

VDD SUPPLY VOLTAGE UNDERVOLTAGE THRESHOLDS

VDDA_ON

VDDB_ON

UVLO Rising threshold 8 8.5 9 V

VDDA_OFF

VDDB_OFF

UVLO Falling threshold 7.5 8 8.5 V

VDDA_HYS

VDDB_HYS

UVLO Threshold hysteresis 0.5 V

INA, INB AND DISABLE

INAH

, V

INBH

DISH

Input high threshold voltage 1.6 1.8 2 V

INAL

, V

INBL

DISL

Input low threshold voltage 0.8 1 1.25 V

INA_HYS

INB_HYS

DIS_HYS

Input threshold hysteresis 0.8 V

OUTPUT

OA+

, I

OB+

Peak output source current

VDD

= 10 µF, C

LOAD

= 0.18 µF, f

= 1 kHz, bench measurement

4 A

OA-

, I

OB-

Peak output sink current

VDD

= 10 µF, C

LOAD

= 0.18 µF, f

= 1 kHz, bench measurement

6 A

OHA

, R

OHB

Output resistance at high state

OUT

= –10 mA, R

OHA

, R

OHB

do not

represent drive pull-up

performance. See t

RISE

Switching Characteristics and

Output Stage for details.

5 Ω

OLA

, R

OLB

Output resistance at low state I

OUT

= 10 mA 0.55 Ω

OHA

, V

OHB

Output voltage at high state

VDDA

, V

VDDB

= 12 V, I

OUT

= –10

11.95 V

OLA

, V

OLB

Output voltage at low state

VDDA

, V

VDDB

= 12 V, I

OUT

= 10

5.5 mV

OAPDA

, V

OAPDB

Driver output (V

OUTA

, V

OUTB

)

active pull down

VDDA

and V

VDDB

unpowered,

OUTA

, I

OUTB

= 200 mA

1.75 2.1 V

UCC21222-Q1

www.ti.com.cn

ZHCSHQ7 –FEBRUARY 2018

Electrical Characteristics (continued)

VCCI

= 3.3 V or 5.0 V, 0.1-µF capacitor from VCCI to GND and 1-µF capacitor from VDDA/B to VSSA/B, V

VDDA

= V

VDDB

= 12

V, 1-µF capacitor from VDDA and VDDB to VSSA and VSSB, DT pin tied to VCCI, C

= 0 pF, T

= –40°C to +150°C unless

otherwise noted

(1)(2)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

DEAD TIME AND OVERLAP PROGRAMMING

Dead time, DT

DT pin open or pull DT pin to

VCCI

Overlap determined by INA, INB -

= 10 kΩ 80 100 120

nsR

= 20 kΩ 160 200 240

= 50 kΩ 400 500 600

Dead time matching, |DT

-DT

= 10 kΩ - 0 10

nsR

= 20 kΩ - 0 20

= 50 kΩ - 0 65

(1) Parameters with only a typical value are provided for reference only, and do not constitute part of TI's published device specifications for

purposes of TI's product warranty.

6.10 Switching Characteristics

VCCI

= 3.3 V or 5.5 V, 0.1-µF capacitor from VCCI to GND, V

VDDA

= V

VDDB

= 12 V, 1-µF capacitor from VDDA and VDDB to

VSSA and VSSB, load capacitance C

OUT

= 0 pF, T

= –40°C to +150°C unless otherwise noted

(1)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

RISE

Output rise time, see 图 28 C

VDD

= 10 µF, C

OUT

= 1.8 nF,

VDDA

, V

VDDB

= 12 V, f = 1 kHz

5 16 ns

FALL

Output fall time, see 图 28 C

VDD

= 10 µF, C

OUT

= 1.8 nF ,

VDDA

, V

VDDB

= 12 V, f = 1 kHz

6 12 ns

PWmin

Minimum input pulse width that

passes to output,

see 图 25 and 图 26

Output does not change the state if

input signal less than t

PWmin

10 20 ns

PDHL

Propagation delay at falling edge,

see 图 27

INx high threshold, V

INH

, to 10% of

the output

28 40 ns

PDLH

Propagation delay at rising edge,

see 图 27

INx low threshold, V

INL

, to 90% of

the output

28 40 ns

PWD

Pulse width distortion in each

channel, see 图 27

PDLHA

– t

PDHLA

|, |t

PDLHB

– t

PDHLB

5.5 ns

Propagation delays matching,

PDLHA

– t

PDLHB

|, |t

PDHLA

– t

PDHLB

see 图 27

f = 250kHz

5 ns

VCCI+ to

OUT

VCCI Power-up Delay Time: UVLO

Rise to OUTA, OUTB,

See 图 31

INA or INB tied to VCCI

µs

VDD+ to

OUT

VDDA, VDDB Power-up Delay Time:

UVLO Rise to OUTA, OUTB

See 图 32

INA or INB tied to VCCI

|CM

High-level common-mode transient

immunity (See CMTI Testing)

Slew rate of GND vs. VSSA/B, INA

and INB both are tied to GND or

VCCI; V

=1000 V;

100

V/ns

|CM

Low-level common-mode transient

immunity (See CMTI Testing)

Slew rate of GND vs. VSSA/B, INA

and INB both are tied to GND or

VCCI; V

=1000 V;

100

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UCC21222-Q1：AECQ100标准双通道隔离驱动器，-40°C至150°C工作范围

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