5
TUSB2E22
www.ti.com
SNLS648A –FEBRUARY 2019–REVISED DECEMBER 2019
Submit Documentation FeedbackCopyright © 2019, Texas Instruments Incorporated
(1) Stresses beyond those listed under Absolute Maximum Rating may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Condition. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
7 Specifications
7.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)
(1)
MIN MAX UNIT
Supply voltage
range
V
DD3V3
–0.3 4.32 V
Analog Supply
voltage range
V
DD1V8
–0.3 2.1 V
Voltage range
DPA, DNA, DPB, DNB, 1000 total number of short events and
cummulative duration of 1000 hrs.
–0.3 6 V
Voltage range eDP0, eDN0, eDP1, eDN1 –0.3 1.6 V
Voltage range CROSS, RESETB, RSVD1, RSVD2, RSVD3, EQ1, EQ0 –0.3 2.1 V
Junction
temperature
T
J(max)
125 °C
Storage
temperature
T
stg
–65 150 °C
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
7.2 ESD Ratings
VALUE UNIT
V
(ESD)
Electrostatic discharge
Human body model (HBM), per
ANSI/ESDA/JEDEC JS-001, all pins
(1)
±1500
V
Charged device model (CDM), per JEDEC
specification JESD22-C101, all pins
(2)
±500
7.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN NOM MAX UNIT
V
DD3V3
Supply voltage (VDD3V3) 3.0 3.3 3.6 V
V
DD1V8
Analog Supply voltage (VDD1V8) 1.62 1.8 1.98 V
T
A
Operating free-air temperature -20 85 °C
T
J
Junction temperature -20 105 °C
T
CASE
Case temperature -20 105 °C
T
PCB
PCB temperature (1mm away from the device) -20 92 °C
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