宽场钻石NV色心微波成像技术

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"这篇科研论文探讨了一种利用金刚石中的氮空位（NV）色心进行宽场微波探测的方法，旨在实现对微波电路设备的非侵入性、原位且直观的微波场成像。" 在现代科技领域，微波器件是许多经典和新兴量子技术的核心组成部分。对这些设备中的微波场进行实时、无损且直接的成像能力，对于理解其工作原理和故障分析具有重要意义。论文中提到的工作基于近年来在氮空位中心磁ometry领域的进展，构建了一种具有微米级分辨率和毫米级视场的宽场微波显微镜。 NV色心是金刚石晶体内的一个结构缺陷，其中氮原子取代了碳原子的位置，并且相邻的碳原子位置空缺，形成一个电子能级系统，这个系统对磁场极其敏感。利用这种敏感性，NV色心可以作为微观磁强计，用于检测微弱的磁场变化。在本文的研究中，作者们利用NV色心阵列，实现了对微波场分布的高分辨率成像。论文描述了一个几微米分辨率的系统，可以在130纳米特斯拉的半高全宽范围内对微波场进行探测，覆盖了整个毫米级别的视场。这一技术的进步使得研究人员能够在大区域内快速扫描并精确描绘微波设备上的电磁场分布，从而为设备的设计优化和故障诊断提供了新的手段。此外，通过宽场微波显微镜，科研人员可以观察到微波器件在操作过程中的动态行为，比如微波能量如何在整个结构中传播和分布，以及器件内部的热点和可能的干扰区域。这将有助于工程师改进设计，提高微波设备的效率和稳定性。这项研究提供了一种创新的微波场探测技术，它结合了金刚石NV色心的独特性质和宽场成像的优势，为微波工程和量子技术领域带来了重要的工具和方法，推动了相关技术的发展。

of quantum systems [34]. To achieve the excellent agreement seen between the measured

and simulated ﬁelds, we had to impose an asymmetric CPW mode for the feedline to our

simulation (see Supplementary Fig. S4b). We can understand the origin of this asymmetric

current by exploring the MW ﬁeld in the CPW upstream from the omega loop (see Sup-

plementary Movie 1). Upstream of a 90

◦

bend in the CPW, the B

−

proﬁle is symmetric,

similar to Fig. 2. This indicates that the MW current is also symmetric, as the tilt of the

NV orientation is parallel to the CPW in this section. We saw similar eﬀects in other MW

devices we tested (not shown), and the change from symmetric to asymmetric MW propa-

gation mode is likely due to the diﬀerence in inner and outer path lengths around the bend,

which creates a phase mismatch between the ground planes [35]. Note, however, that in

addition to the ﬁeld asymmetry produced by the MW current asymmetry, some of the B

−

asymmetry above the CPW downstream of the 90

◦

bend is also due the angle between the

MW current and NV axis.

As a demonstration of the versatility of the microscope, we then imaged B

−

above an

inductive meander line (Fig. 3c) and an interdigital capacitor (Fig. 3d). Like in the omega

loop, we see that the MW ﬁeld, and therefore current, is largely conﬁned to edge modes, but

avoids the outer edges of corners. In Fig. 3c, the ﬁeld features of the meander become blurred

towards the left of the image, due to a 0.25

◦

tilt between the diamond and chip increasing

the mean sensing distance from h = 11 µm on the right hand side of the image, to h = 20 µm

on the left hand side. In Fig. 3d, we see that the majority of the MW current is reﬂected

at the CPW-capacitor interface. To increase the signal in the capacitor ﬁngers, we input

a relatively large P

= 38 dBm. The image shows that capacitive coupling does indeed

transfer some MW current from the upstream to downstream ﬁngers, however a signiﬁcant

current bypasses the capacitor ﬁngers, ﬂowing the through the ground planes surrounding

the ﬁnger structure.

In Fig. 4a, we present a prototype design of a novel atom chip, which is a type of device

used for trapping and manipulating ultracold atoms, and a key platform for practical ap-

plications of quantum technologies that exploit such atoms [36]. We use our microscope to

perform an initial characterisation, conﬁrming that the chip provides an all-MW trapping

potential, a new addition to the atom chip toolbox that will enable e.g. chip-generated

trapping of atoms in hyperﬁne states untrappable using static ﬁelds [37, 38]. The trapping

potential, a minimum in the MW ﬁeld above the chip, is created by counter-propagating

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ZacharyHu

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