"高效6A大电流Spi驱动TMC5160数据手册"

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The TMC5160 is a high-speed 3D printing motor driver chip designed for high current applications, capable of delivering up to 6A of current. This advanced chip integrates a power driver for stepper motors, offering precise control and improved performance in various motion control applications. Developed by TRINAMIC Motion Control GmbH, the TMC5160 data manual provides detailed technical specifications and information on how to effectively utilize this innovative chip in motor control systems. With its SPI driving capabilities, the TMC5160 offers superior performance and efficiency, making it an ideal choice for demanding industrial and commercial applications that require reliable and precise motor control. Whether used in robotics, automation, or manufacturing equipment, the TMC5160 sets a new standard for high-current motor drivers, providing users with a versatile and efficient solution for their motion control needs.

TMC5160/TMC5160A DATASHEET (Rev. 1.13 / 2019-NOV-19) 16

www.trinamic.com

Attention

In case VSA is supplied by a different voltage source, make sure that VSA does not drop out during

motor operation. The motor driver should be disabled in case VSA becomes switched off before VS.

Hard switching edges on VSA might result in bridge cross-conduction otherwise. It is safest to derive

VSA voltage from VS supply.

3.2 External Gate Voltage Regulator

At high supply voltages like 48V, the internal gate voltage regulator and the internal 5V regulator

have considerable power dissipation, especially with high MOSFET gate charges, high chopper

frequency or high system clock frequency >12MHz. A good thermal coupling of the heat slug to the

system PCB GND plane is required to dissipate heat. Still, the thermal thresholds will be lowered

significantly by self-heating. To reduce power dissipation, supply an external gate driver voltage to the

TMC5160. Figure 3.2 shows the required connection. The internal gate voltage regulator becomes

disabled in this constellation. 12V +/-1V are recommended for best results.

5V Voltage

regulator

5VOUT

VSA

2.2µ

VCC

2.2µ

12V Gate Voltage

2R2

470n

11.5V Voltage

regulator

12VOUT

Figure 3.2 External gate voltage supply

Hint

With MOSFETs above 50nC of total gate charge, chopper frequency >40kHz, or at clock frequency

>12MHz, it is recommended to use a VSA supply not higher than 40V.

TMC5160/TMC5160A DATASHEET (Rev. 1.13 / 2019-NOV-19) 17

www.trinamic.com

3.3 Choosing MOSFETs and Slope

The selection of power MOSFETs depends on a number of factors, like package size, on-resistance,

voltage rating and supplier. It is not true, that larger, lower RDSon MOSFETs will always be better, as

a larger device also has higher capacitances and may add more ringing in trace inductance and power

dissipation in the gate drive circuitry. Adapt the MOSFETs to the required motor voltage (adding 5-10V

of reserve to the peak supply voltage) and to the desired maximum current, in a way that resistive

power dissipation still is low for the thermal capabilities of the chosen MOSFET package. The TMC5160

drives the MOSFET gates with roughly 10V, so normal, 10V specified types are sufficient. Logic level

FETs (4.5V specified RDSon) will also work, but may be more critical with regard to bridge cross-

conduction due to lower V

GS(th)

The gate drive current and MOSFET gate resistors R

(optional) determine switching behavior and

should basically be adapted to the MOSFET gate-drain charge (Miller charge). Figure 3.3 shows the

influence of the Miller charge on the switching event. Figure 3.4 additionally shows the switching

events in different load situations (load pulling the output up or down), and the required bridge

brake-before-make time.

The following table shall serve as a thumb rule for programming the MOSFET driver current

(DRVSTRENGTH setting) and the selection of gate resistors:

MOSFET MILLER CHARGE VS. DRVSTRENGTH AND R

Miller Charge

[nC] (typ.)

DRVSTRENGTH

setting

Value of R

[Ω]

<10

≤ 15

10…20

0 or 1

≤ 10

20…40

1 or 2

≤ 7.5

40…60

2 or 3

≤ 5

>60

≤ 2.7

The TMC5160 provides increased gate-off drive current to avoid bridge cross-conduction induced by

high dV/dt. This protection will be less efficient with gate resistors exceeding the values given in the

table. Therefore, for larger values of R

, a parallel diode may be required to ensure keeping the

MOSFET safely off during switching events.

MOSFET gate charge vs. switching event

– Total gate charge (nC)

– Gate to source voltage (V)

0 5 10 15 20 25

– Drain to source voltage (V)

MILLER

Figure 3.3 Miller charge determines switching slope

Hints

- Choose modern MOSFETs with fast and soft recovery bulk diode and low reverse recovery charge.

- A small, SMD MOSFET package allows compacter routing and reduces parasitic inductance effects.

TMC5160/TMC5160A DATASHEET (Rev. 1.13 / 2019-NOV-19) 18

www.trinamic.com

MOSFET drivers

BMx

12VOUT

Load pulling BMx down Load pulling BMx up

BBM

Miller plateau

Hx-

BMx

-V

BMx

Miller plateau

Effective break-before-make time

-1.2V

Output

slope

Output

slope

BBM

Figure 3.4 Slopes, Miller plateau and blank time

The following DRV_CONF parameters allow adapting the driver to the MOSFET bridge:

Parameter

Description

Setting

Comment

BBMTIME

Break-before-make time setting to ensure non-

overlapping switching of high-side and low-side

MOSFETs. BBMTIME allows fine tuning of times in

increments shorter than a clock period.

For higher times, use BBMCLKS.

0…24

time[ns]

100ns*32/(32-BBMTIME)

Ensure ~30% headroom

Reset Default: 0

BBMCLKS

Like BBMTIME, but in multiple of a clock cycle.

The longer setting rules (BBMTIME vs. BBMCLKS).

0…15

0: off

Reset Default: OTP 4 or 2

DRV_

STRENGTH

Selection of gate driver current. Adapts the gate

driver current to the gate charge of the external

MOSFETs.

0…3

Reset Default = 2

FILT_ISENSE

Filter time constant of sense amplifier to suppress

ringing and coupling from second coil operation

Hint: Increase setting if motor chopper noise

occurs due to cross-coupling of both coils.

(Reset Default = %00)

0…3

00: ~100ns (reset default)

01: ~200ns

10: ~300ns

11: ~400ns

DRV_CONF Parameters

Use the lowest gate driver strength setting DRVSTRENGTH giving favorable switching slopes, before

increasing the value of the gate series resistors. A slope time of nominal 40ns to 80ns is absolutely

sufficient and will normally be covered by the shortest possible Break-Before-Make time setting

(BBMTIME=0, BBMCLKS=0).

In case slower slopes have to be used, e.g. with large MOSFETs, ensure that the break-before-make

time (BBMTIME, optionally use BBMCLKS for times >200ns) sufficiently covers the switching event, in

order to avoid bridge cross conduction. The shortest break-before-make time, safely covering the

switching event, gives best results. Add roughly 30% of reserve, to cover production stray of MOSFETs

and driver.

TMC5160/TMC5160A DATASHEET (Rev. 1.13 / 2019-NOV-19) 19

www.trinamic.com

3.4 Tuning the MOSFET Bridge

A clean switching event is favorable to ensure low power dissipation and good EMC behavior.

Unsuitable layout or components endanger stable operation of the circuit. Therefore, it is important to

understand the effect of parasitic trace inductivity and MOSFET reverse recovery.

Stray inductance in power routing will cause ringing whenever the opposite MOSFET is in diode

conduction prior to switching on a low-side or high-side MOSFET. Diode conduction occurs during

break-before make time whenever the load current is inverse to the following bridge polarity. The

MOSFET bulk diode has a certain, type specific reverse recovery time and charge. This time typically is

in the range of a few 10ns. During reverse recovery time, the bulk diode will cause high current flow

across the bridge. This current is taken from the power supply filter capacitors (see thick lines Figure

3.5). Once the diode opens parasitic inductance tries to keep the current flowing. A high, fast slope

results and leads to ringing in all parasitic inductivities (see Figure 3.6). This may lead to bridge

voltage undershooting the GND level as well as fast pulses on VS and all MOSFET connections. It

must be ensured, that the driver IC does not see spikes on its BM pins to GND going below -5V.

Severe VS ripple might overload the charge-pump circuitry. Measure the voltage directly at the driver

pins to driver GND. The amount of undershooting depends on energy stored in parasitic inductivities

from low side drain to low side source and via the sense resistor RS to GND.

When using relatively small MOSFETs, a soft slope control requires a high gate series resistance. This

endangers safe MOSFET switch off. Add additional diodes to ensure safe MOSFET off conditions with

slow switch-on slopes (shown for right MOSFET pair in Figure 3.5).

Figure 3.7 shows performance of the basic circuit after adapting switching slope and adding 1nF

bridge output capacitors.

GNDD

GNDA

DIE PAD

BMA2

SRAH

Capacitor reduces

ringing on sense resistor.

SRAL

LA1

LA2

HA1

HA2

BMA1

CA1

CA2

Coil

out

47R



Decide use and value of the additional components based on measurements of the actual circuit using the final layout!

100n

1n,

100V

1n,

100V

2n2

RC-Filter protects SRAH /

SRAL and reduces spikes

seen by the chopper

: Reduce slope and protect the driver against ringing in the

interconnections between MOSFET and driver

220nF

Optional RC filter

against VS ringing

4.7µF

LOW-

ESR

Additional 1A type Schottky Diodes (selected for full VM range) in combination with R

to 1.0 Ohm) eliminate

undershooting of BM in case of high parasitic layout inductivity, e.g. with long interconnections to MOSFETs.

470pF to a few nF output

capacitors close to bridge

and / or output reduce

ringing and improve EMC

Filter capacitors placed near bridge

Optional gate diodes in combination

with very high value of R

Figure 3.5 Bridge protection options for power routing inductivity

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