6.4-Gbps LPDDR5 接口：带宽提升技术实现

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"本文介绍了在DesignCon2019会议上发表的研究成果，主要关注如何通过带宽改进技术实现6.4-Gbps引脚速率的LPDDR5接口。该研究由三星电子的Billy Koo、Jinho Choi、Kwanyeob Chae和Juyoung Kim共同完成，展示了新一代移动DRAM技术——LPDDR5在功率效率和内存性能上的显著提升。 LPDDR5（低功耗双倍数据速率5）是针对人工智能、自动驾驶汽车、高性能计算和嵌入式视觉等应用的严格要求而发展出的内存技术。与上一代LPDDR4相比，LPDDR5提供了更大幅度的功率节省和更高的带宽。文章详细阐述了多种带宽优化技术，这些技术使得世界首个6.4-Gbps/pin的LPDDR5接口成为可能。在6.4-Gbps的数据速率下，论文中提到的读取（READ）和写入（WRITE）有效窗口余量（Valid Window Margin，VWM）分别为0.36 UI和0.4 UI，这表明了系统在高速操作下的稳定性。此外，WCK时钟的占空比在3.2 GHz频率下保持在43%至57%之间，包括工艺变化，并且峰值到峰值的周期性抖动小于20ps，这进一步证明了设计的精度和可靠性。作者们还分享了各种测量结果，这些结果可作为其他LPDDR5接口设计者的参考依据，帮助他们在设计过程中优化性能和稳定性。通过深入理解这些带宽改进技术，设计师可以更好地应对高速内存接口的挑战，满足不断增长的数据传输需求，同时确保低功耗和高效率。 Billy (Kyounghoi) Koo是该研究的主要作者，他在三星电子工作，专注于内存接口技术。他的同事Jinho Choi、Kwanyeob Chae和Juyoung Kim也在内存技术领域有着深厚的背景和实践经验，他们的合作成果对推动LPDDR5技术的发展起到了重要作用。"

LPDDR4/4X/5 Interface Schemes

LPDDR4/4X[1,2] adopted LVSTL(Low Voltage Swing Terminated Logic) interface,

the signal swing level is about VDDQ/3. In case of LPDDR4X VDDQ is 0.6V and signal

swing level is about 300mV. To reduce the power LPDDR5 use 0.5V VDDQ and swing

level is 250mV under VSSQ-TERM condition. Also un-termination condition, the

maximum signal swing voltage is limited to VDDQ-Vth. The proposed LPDDR4 driver

in Fig. 1 has the multi-VOH level with the termination, which also can handle the VOH

drift control in case of the un-termination. Pre-emphasis and slew-rate control scheme are

implemented for high speed interface signaling and reduce the EMI for mobile devices.

In the case of VSSQ-TERM condition, signal swing voltage is determined by the

following equations.

0*2)^())()((22^

)(*_*2

2)^(

)(*2*_

2)^(

)(*2*_*

















RtermVthVDDVxVthVDDRonV thV DDRtermVxRterm

VthVDDupRon

VthVDDVx

VthVDDupRon

VthVGS

VthVDDupRonVds

Vds

Rds

Vds

Rterm

An NMOS pull-up driver operates in the saturation region like a source follower so no

additional current source is required. With this NMOS pull-up driver characteristics non-

linear type driver configuration is possible and provides fast driving current. And it is

possible to reduce a junction capacitance caused by small size of an NMOS pull-up driver.

In the case of a pull-down driver, a driver level converges to VSSQ through the

termination resistor (RTERM) and a pull-down driver operates in the linear region, so a

pull-down driver contribution to drive small signaling is minor. Fig. 1 shows the various

LPDDR4/4X/5 interface configurations. Fig. 2 shows various LPDDR4/4X/5 signaling.

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6.4-Gbps LPDDR5 接口：带宽提升技术实现

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